TK3904LLD03 Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-03D Plastic-Encapsulate Transistors

WILLAS
FM120-M
TK3904LLD03THRU
WBFB_1.0P_A-_S0_U3_RD_FACP_El_Ma_Os_Ut_Nic_T -_SE_CHn_Oc_TTa_Kp_Ys_Bu_ARla_RIt_Ee_{R R}T_Er_Ca_Tn_IFs_IEi_Rs_St_-o₂₀r_Vs_{- 200V}
FM1200-M
SOD-123+ PACKAGE
Pb Free Prod
Features
Package outline
TRANSISTO^•R^Bbeatttcehr
process
reverse
design, excellent power dissipation offers
leakage current and thermal resistance.
DESCRIPTIO^• N^{Loopwtimpirzoefibleosaurdrfaspceacmeo. unted application in order to}
NPN Epitaxia• lLSowilicpoowneTr rloasnss, ihsitgohrefficiency.
• High current capability, low forward voltage drop.
SOD-123H _C
WBFBP-03D
(1.0×1.0×0.5)
unit: mm
TOP ^0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
FEATURES ^{• High surge capability.}
Epitaxial Plana^•r ^GD^uie^arC^do^rinⁿs^gtr^fu^oc^r t^oio^vn^{ervoltage protection.}
BE
Complementar^•y^UP^lN^traP^hTⁱy^gp^he^-sA^pv^ea^ei^dla^sb^wle^itc(T^hKⁱⁿ3^g9^. 06LLD03)
Ultra-Small Su^•rfa^Sc^ile^icM^ono^eu^pnⁱt^taP^xa^iack^{l p}a^lg^ae^{nar chip, metal silicon junction.}
1. BASE
0.071(1.8)
C
0.056(1.4)
Also Available ^•in^LL^ee^aa^dd^-frF^er^eee^paV^re^tsrs^mio^en^{et environmental standards of}
2. EMITTER
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
APPLICATION_{Halogen free product for packing code suffix "H"}
3. COLLECTOR ^BACK
General Purp_Mos_ee_cA_hm_ap_nli_if_cie_ar,_ls_dw_aitc_th_aing
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
EB
0.040(1.0)
DVD-ROM, N^• o^Et^pe^oxb^yo^:o^Uk^L9P⁴C^-V,⁰e^rt^ac^t.^e)^{d flame retardant}
• Case : Molded plastic, SOD-123H
Pb-Free
pa^•c^Tk^era^mgⁱⁿe^alsis^:Pa^lav^tea^di^tl^ea^rb^mlⁱⁿe^als,
solderable
per
,
MIL-STD-750
y RoHS product for paMcektihnogd 2c0o2d6e suffix ”G”
• Polarity : Indicated by cathode band
r _{Halogen fre•eMopurnotidnug cPtosfiotironp:aAcnky ing code suffix “H”}
a _{• Weight : Approximated 0.011 gram}
0.031(0.8) Typ.
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING:1N
C
in ^{1N MAXIMUM RATINGMSA(TXaIM=2U5M℃RuAnTleINsGsSotAhNeDrwEisLEeCnToRteICdA) L CHARACTERISTICS}
Symb^Ro^al^{tings at 25℃} P^amar^ba^iem^nte^tt^ee^mr^{perature unless} V^ota^hl^eu^re^{wise sp}U^en^cii^ft^ied.
Single phase half wave, 60Hz, resistive of inductive load.
V_CBO
For
Collector-Base Voltage
capacitive load, derate current
by
20%
60
V
BE
lim ^VCEO
Collector-Emitter Voltage
RATINGS
40
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
V_EBOMarkingE_Cm_oi_dtt_eer-Base Voltage
6
V ₁₂
13
14
15
16
18
10
115 120
I_C MaximuCmoRlleccutorrrenCtuPreraeknRt e-CveorsnetinVuolotaugse
0.2 VRRM A 20
30
40
50
60
80
100
150
200
P_C ^MaximuC^mo^Rlle^Mc^Sto^Vr^oD^ltai^gs^esipation
0.1 ^VRMS W ¹⁴
21
28
35
42
56
70
105
140
e _{TJ MaximuJmunDcCtioBnlocTkeinmgpVeorltaatguere}
150 ^{VDC ℃ 20}
30
40
50
60
80
100
150
200
r _{Tstg MaximuSmtoArvaegreagTeeFmorpwearradtRuerectified Current -55~150 IO ℃}
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
P _{ELECTsuRpeICrimApoLseCd oHnAratRedAloCadT(JEERDEISC TmeICthoSd)(Ta=25℃}
u^In^FSl^Mess
otherwise
specified)
30
Typical Thermal Resistance (Note 2)
Typica^Pl J^au^rn^ac^mtio^en^tC^erapacitance (Note 1)
CollecOtoperr-abtainsgeTebmrepaerkadtuorewRnanvgoeltage
Collec^St^to^or^ra-e^gem^Tit^et^me^pr^eb^rar^te^ua^rek^Rd^aoⁿw^gen voltage
RΘJA
Symbol _CJ
Test conditions
V_(BR)CBO TJI_C=10μA,I_E=0^{-55 to +125}
V_(BR)CEO ^TSTI^G_C=1mA,I_B=0
40
Min₁₂₀ Typ
60
-₄6₀5 to +175
Max
-55 to +150
Unit
V
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=10μA,I_C=0
6
V
CHARACTERISTICS
Collec_Mto_axr_imc_uu_mt-o_Foff_rwc_au_rdrr_Ve_on_ltt_{age at 1.0A DC}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
I_{CEX VF}V_CE=30V,V_EB(off)=3V_0.50
0.70
0.85^0.05
μ₀A_.9
0.92
Emitte_Mr_ac_xu_imt_u-o_mff_Ac_veu_rr_ar_ge_en_Rt_{everse Current at @T A=25℃}IEBO
Rated DC Blocking Voltage
@T A=12^h5F℃E(1)
V_EB=5V,I_C=0
IR
V_CE=1V,I_C=0.1mA
0.5
40 ₁₀
0.1
μA
h_FE(2) V_CE=1V,I_C=1mA
NOTES:
DC cu₁r_-r_Me_en_at_sug_ra_edin_{at 1 MHZ and applied reverse voltage ohf 4F.E0(3V)DC. VCE=1V,IC=10mA}
2- Thermal Resistance From Junction to Ambient ^hFE(4)
V_CE=1V,I_C=50mA
h_FE(5) V_CE=1V,I_C=100mA
70
100
300
60
30
Collector-emitter saturation voltage
V_CE(sat)1
V_CE(sat)2
I_C=10mA,I_B=1mA
I_C=50mA,I_B=5mA
0.2
V
0.3
V
Base-emitter saturation voltage
V_BE(sat)1
V_BE(sat)2
I_C=10mA,I_B=1mA
I_C=50mA,I_B=5mA
0.65
0.85
V
0.95
V
Transitio₂n₀f₁re₂q_-u₀e₆ncy
f_T
V_CE=20V,I_C=10mA,f=100MHz
300 _{WILLAS ELECT}M_RH_Oz_{NIC CO}
2012-0
WILLAS ELECTRONIC CORP.