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SRK7002LT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – Small Signal MOSFET Silicon N-Channel
WILLAS
1S.0AmSaURllFASCiEgMnOaUlNMT SOCHSOFTETKTY BSAiRlRicIEoRnRENCT-IFCIEhRaS n-20nVe- 2l00V
SOD-123+ PACKAGE
FM120-M+
SRK7002LTTH1RU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
zFoepatitmuirzeesboard space.
1•) LLooww poonw-reersliosstasn, cheig.h efficiency.
• High current capability, low forward voltage drop.
2•)
Fast
High
switching speed.
surge capability.
3•) GLouwar-dvorilntaggfeordorviveer.voltage protection.
4•) UElatrsailyhidgehs-sigpneeedd dsrwivitechciinrcgu. its.
5•) SEialiscyontoeppaitraaxlilaell.planar chip, metal silicon junction.
6•) LPeba-Fd-rfereeeppaacrktasgmeeiestaevnaviilarobnlemental standards of
7) MESILD-SPTrDot-e1c9t5e0d0:2/022080V
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
z
•
Pb-Free package
Case : Molded plastic,
is available
SOD-123H
•
TReormHinSalpsr:oPdlautecdt
tfeorrmpinaaclsk,insogl.dceoradbelespuefrfiMxIL”G-S”TD-75
,
0
Halogen Mfreetehopdr2o0d2u6ct for packing code suffix “H”
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
SOT-23 0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
zDevice Marking and Ordering Information
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 2D5℃evicaembient tMemarpkeinragture unleSsshiopthpeinrwgise specified.
Single pShRaKs7e0h0a2lfLTw1ave, 60HzR, rKesistive3o0f0in0dTuacptieve&loRaede.l
For capacitive load, derate current by 20%
3
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100d-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
MaximumzD$CEBVlRocOkXinWHg VPolDta[geLPXPUDWLQJV 7D V°&DC
20
30
28
35
40
50
42 1 g56
60
80
70
100
105
140 Volts
150
200 Volts
Maximum Average ForPwaarradmReetcetirfied Current
SymbIoOl
Limits
Unit
1.0
Amps
Peak ForwDardaiSnu-srgoeuCrcuerrevnot l8ta.3gmes single half sine-waveVDSISFSM
superimpoGseadteo-nsroauterdceloavdol(tJaEgDeEC method)
VGSS
Typical Thermal Resistance (Note 2C)ontinuous
Typical JuDnrcatiionncCuarrpeanctitance (Note 1)
Operating Temperature Range Pulsed
IDRΘJA
IDP∗CT1JJ
60
V
±20
V
115
mA
0.8-55 to +125 A
30
s
2
40
120
-55 to +150
Amps
℃/W
PF
℃
Storage Temperature Range
Continuous
IDTRSTG
115
mA
- 65 to +175
℃
Drain reverse current
Pulsed
IDRP∗1
0.8
A
MaximumTFootrawlaprodwVCeoHrltaAdgiRseAsaiCpt Ta1Et.0ioRAnISDTCICS
PDS∗Y2MBOL
VF
FM1202-M2H5 FM130-MH FMm14W0-MH
0.50
FM150-MH FM160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
UNIT
Volts
MaximumCAhvaenrangeel RteemvepresreaCtuurrerent at
Rated DCSBtolorcakginegtVemoltpaegreature
@T A=25℃
Tch
IR
@T A=125℃ Tstg
150
−55~+150
°C
°C
0.5
10
mAmps
∗1 Pw≤10µs, Duty cycle≤1%
NOTES: ∗2 When mounted on a 1×0.75×0.062 inch glass epoxy board.
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.