SESOTA03C Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – Dual Transient Voltage Suppressors Array for ESD Protection

WILLAS
Dual Transient Voltage Suppressors Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
SESOTA03_TC_HRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Gen^•e^Lor^opa^wtiml^piD^rzoefe^ibls^eoc^saurr_dri^fp^aspct^eaio_cmen^{o. unted application in order to} Features
•_TL_ho_ew_Sp_Eow_Se_Or _Tlo_As₀s,₃h_Cig_ih_se_affi_dci_ue_an_lc_my. _{onolithic voltage z}
supp^•re^Hs^igs^ho^cr^ud^re^resⁿig^{t c}n^ae^pd^abto^ilitp^y,ro^lot^wec^fot ^rc^wo^am^rdp^vo^on^lte^an^gt^es^dw^roh^pi^.ch z
• High surge capability.
are •cGonuanredcritnegdfotroovedravtoaltagaendprottreacntisomn. ission lines z
2 Unidirectional Transil func⁰t^.1io⁴⁶n^(3.s⁷⁾
0.130(3.3)
0.012(0.3) Typ.
Low leakage current: I_R max< 20 μA at V_RM
150W peak pulse power(8/20μs)
again^• s^Ut^ltE^raS^hD^ig.^hI^-t^spc^ela^em^{d s}p^ws^itt^ch^heⁱⁿv^go^. ltage just above the z
• Silicon epitaxial planar chip, metal silicon junction.
logic_• l_Le_ev_ae_dl_-fs_reu_ep_pp_aly_rtsfo_mr_ep_eo_{t e}s_nit_viv_ire_ont_mra_en_ns_taie_{l s}n_tt_as_nda_an_rd_dst_oo_f a
z
Transient protection for data lines as per
0.071(1.8)
0.056(1.4)
Pb-Free package is available
diode ^Mdr^ILo^-p^STb^De^-lo¹⁹w⁵⁰g⁰ro^/2u²n⁸d for negative transients. It
• RoHS product for packing code suffix "G"
can a_Hls_alo_ogew_n o_frr_ek_{e p}a_ros_ducb_ti_fd_oi_rr_pe_ac_ct_kio_inn_ga_cl_ods_eu_sp_ufp_fir_xe_"s_Hs_"or by
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
connMecetincghoannlyicpian1l danadt2a.
Complies with the following standards ^0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.024(0.6)
App^•l^Cic^aa^seti^:o^Mn^ols^{ded plastic, SOD-123H}
IEC61000-4-2
0.031(0.8) Typ.
0.031(0.8) Typ.
z ^•C^To^em^rmpⁱⁿu^at^le^sr^:s^{Plated terminals, solderable per MIL-STD-7L5e0v, el 4 15 kV (air discharge)}
z Printers ^{Method 2026}
8 kV(contact discharge)
z
• Polarity : Indicated by cathode band
Communication systems
MIL STD 883E - Meth^Do^imd^en3^si0^on1^s5ⁱⁿ-7^incC^hel^sa^asⁿs^{d (}3^millimeters)
• Mounting Position : Any
25 kV HBM (Human Body Model)
Fun^•c^Wti^eo^ign^hta^:l^Ad^ppi^ra^og^xir^ma^am^{ted 0.011 gram}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Recti_Sfie_Od C_Tu_-2rre₃nt
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
18
10
115 120
80
100
150
200 V
56
70
105
140 ^V
80
100
150
200 ^V
IO
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave
sup_Aer_bim_spo_ose_ld_uo_tn_erat_Red_alo_ta_id_n(J_gED_sEC_(Tm_aet_mho_bd₌) _{25°C )}
Typic_Sal_yT_mhe_brm_oa_ll Resistance (Note 2)
Typical Junction Capacitance (Note 1)
IFSM
R_PΘJ_aA_rameter
CJ
30
A
40
120
Value
Units
℃
OperatinPgPTPemperatuPreeRaakngPe ulse Power (tp = 8/20TμJs)
-55 to +125
150 -55 to +150W
Storage T_Te_Lmperature_MRa_an_xg_ie_{mum lead temperature}TS_fT_oG_{r soldering during 10s}
- 65 to +17₂5₆₀
°C
T_stg
C^SHA^toR^rA^aC^gT^eER^TI^eST^mIC^pS^{erature Ran}S^gY^eMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-M^-H⁵F⁵M1^to80-⁺M¹H⁵F⁵M1100-MH^°F^CM1150-MH FM1200-MH U
Maximum_ToF_porward Vo_Olta_pg_era_at _t1_i._n0_gA D_TC_{emperature Ran}V_gF_e
0.50
0.70 _{-40 to +}0₁.8₂5₅
°C ^0.9
0.92 V
Maximum_TA_j verage Re_Mve_ars_xe_imCu_ur_mren_jt_ua_nt _c@_tioT_nA=_t2_e5_m℃_peratuIRre
Rated DC Blocking Voltage
@T A=125℃
0.5 ₁₅₀
°C
m
10
NOTES:
Electrostatic discharge
1- MeasuVre_Pd_Pat 1 MHZ and apIpElieCd6re1ve0r0se0v-o4lt-a2geaoifr4d.0isVcDhC.arge
15
kV
2- Thermal Resistance From J_Iu_En_Cctio₆n₁t₀o ₀Am_0-b₄ie_-n₂t _{contact discharge}
8
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.