SEDFN05V4 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – Ultra Low Capacitance TVS Arrays

WILLAS
FM120-M+
SEDFN05V4_THRU
Ultra Low Capacitance TVS Arrays
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
Feat^•u^Br^ae^tcs^{h process design, excellent power dissipation offers} Applications
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
z Pa^oc^pk^timag^ize^e d^be^oas^rig^dn^spo^ap^ct^eim^. ized for high speed lines
z
• Low power loss, high efficiency.
F_• l_Ho_iw_gh-T_ch_ur_ro_reu_ng_t h_cad_pe_as_bi_ig_litn_{y, low forward voltage drop.}
z High Definition Multi-Media Interface (HDMI).
0.146(3.7)
z Digital Visual Interface (DVI) ^0.130(3.3)
0.012(0.3) Typ.
z P^• r^Ho^igte^hc^st^us^rf^go^eu^cr^aI^p/O^abil^liⁱn^tye^.s
z DisplayPortTM Interface
z L^•• o_UGw_lutrac_ara^dhrp_iigna_hgc_-i_sft^opa^ren^oec^vde^es:^rvw0^oi._tl3_ctahp^giF_negt^p.y^rp^oi^tc^ea^ctl^io(Iⁿ/O^. to I/O)
z L• oSwiliccolanmeppitinaxgiavloplltaangaer chip, metal silicon junction.
z MDDI Ports
z LVDS
0.071(1.8)
0.056(1.4)
z L^• o^Lw^eao^dp^-fe^rer^eat^pin^arg^tsv^mo^elt^ea^tg^eeⁿ:^v5^irV^{onmental standards of}
MIL-STD-19500 /228
z S• RoloidH-Ssptarotdeusctilfiocropna-cakvinaglacondcehseuftfeixc"hGn" ology
z Serial ATA
z PCI Express
z _P^H_b^a_-F^lo_r^g_e^en_e ^f_p^re_a^e_c^p_k^ro_a^d_g^uc_e^{t f}_i^o_s^{r p}_a^a_v^c_a^ki_iⁿ_la^g_b^co_le^{de suffix "H"}
Mechanical data
RoHS product for packing code suffix ”G”
• Epoxy : UL94-V0 rated flame retardant
Complies
with
the
following
standards0.040(1.0)
0.024(0.6)
Halogen free product for packing code suffix “H”
• Case : Molded plastic, SOD-123H
IEC61000-4-2
0.031(0.8) Typ.
0.031(0.8) Typ.
• Terminals :Plated terminals, solderable per MIL-STD-750,Level 4 15 kV (air discharge)
General Desc^Mr^ei^tp^hoti^do²n⁰²⁶
• Polarity : Indicated by cathode band
SEDF^•N^M0^o5^uV^nt4^inga^Pre^osiu^til^otrⁿa^{: A}loⁿw^y capacitance TVS arrays
desig^•n^Wed^eigto^{ht :}p^Aro^ppte^roc^xt^imh^aig^teh^d s⁰p^.0e¹e¹d^grad^mata interfaces.This
8 kV(contact discharge)
MIL STD 883E - M^De^imth^eno^sid^ons3ⁱ0ⁿ 1ⁱⁿ5^ch-^e7^{s a}Cⁿl^da⁽s^ms^illim3^eters)
25 kV HBM (Human Body Model)
series has MbAeXenIMUspMecRifAicTaIlNlyGSdeAsNigDneEdLEtCoTRprIoCtAecLtCHARACTERISTICS
R_sa_eti_nn_sgs_itia_vt_e25℃_coa_mm_pbi_oe_nnt_et_nem_tspera_wtu_hr_ie_cu_hnles_as_reother_cw_ois_ne_ns_ep_ce_tc_eif_died. _to
S_hin_igg_hle_-sph_pa_es_ee_dhalf _dw_aav_tae, 60_aH_nz_d, resi_ts_rt_aiv_ne_so_mf in_isd_su_ic_oti_nve lo_la_ind._{es form}
For capacitive load, derate current by 20%
overvoltage caused by ESD(electrostatic
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
M^daⁱr^ski^cn^hg ^aC^ro^gd^ee ^{),CDE(Cable Discharge Events),a}12^nd 13
14
15
16
18
10
115 120
M_Eax_Fim_Tu₍m_eleRe_cc_tru_ir_cre_an_lt _fP_ae_sa_tk _tR_raev_ne_srs_iee _nV_to_slt₎age
VRRM
20
30
40
50
60
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
MFaxuimnumctAivoernagaelFdorwiaargd rRaecmtified Current
VDC
20
30
40
50
60
80
100
150
200
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
MAaxbimsumoAluvetreageMRaevxerisme CuumrrentRatat@inT Ag=s25℃
IR
Rated DC_SyB_mloc_bk_oin_lg Voltage
@T A=125℃ _Parameter
0.5
Valu¹e⁰
Units
NOTES: P pk
Peak Pulse Power (tp = 8/20μs)
1- Measured_I a_Pt _P1 MHZ and applied reverse_Pvo_elt_aag_ke_Pof_u4_l._s0_eVD_CC_u. _{rrent (tp = 8/20μs)}
2- Thermal Resistance From Junction to Ambient
V ESD
ESD per IEC 61000-4-2 (Air)
150
5
+/- 17
Watts
A
kV
ESD per IEC 61000-4-2 (Contact)
+/- 12
TJ
Operating Temperature
-55 to +125
°C
T STG
Storage Temperature
-55 to +150
°C
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.