SE4812LT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – 30V N-Channel Enhancement-Mode MOSFET

WILLAS
30V N-Channel Enhancement-Mode MOSFET
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
SE4812LTTH1RU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Loop_Vwtim_Dp_Sirzo=efibl3eo₀sau_{Vrdrfaspceacmeo.} unted application in order to
• Lo_Rw_Dp_So₍w_Oe_Nr₎l_,os_Vs_g, _sh_@igh₁e₀ffi_Vci_,en_Idc_sy._{@8.5A = 38mΩ}
•
•
HHii^Rgghh^Dsc^Suu⁽rr^Ogre^Nen⁾c^,t ac^Vpaa^{gpbsai@bliitlyi4t.y.,5loVw,foIrdwsa@rd5vAolta=ge5d2romp.Ω}
• Guardring for overvoltage protection.
• U_Fltr_ea _ahi_tg_uh-_rs_epe_sed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Le^Aa^dd^v-^afⁿre^ce^edpa^trr^etⁿs^cm^he^pe^rt^oe^cn^esv^siro^ten^cm^heⁿn^olt^oa^gl ^ystandards of
M^HIL^ig-S^h T^DD^e-ⁿ1^s9^it5^y0^C0^e/^l2^l 2^D8^{esign For Ultra Low On-Resistance}
• Ro^HH^igS^hp^Pro^od^wu^ec^rt ^afoⁿr^dpa^Cc^uk^rin^regⁿc^to^Hd^aeⁿs^du^lfⁱⁿfix^g "^CG^a"^pability
Halogen free product for packing code suffix "H"
Me^Pc^bh^-Fa^ren^eic^pa^al^cd^kaa^gt^ea ^{is available}
• E^Rpo^ox^Hy :^SUL^p9^r4^o-^dV^u0 ^cra^tt^fe^od^rfl^pam^ace^kreⁱⁿta^grd^ca^on^dt ^{e suffix ”G”}
• C^Has^ae^lo: M^go^elⁿde^fd^repl^eas^pti^rc^o, ^dS^uO^cD^t-1^fo23^rH^{packing code suffix “H”}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
▼ Simp^Ml^ee^thD^or^di²v⁰e²⁶Requirement
• Polarity : Indicated by cathode band
• M^▼oun^Stin^mg^aP^lo^ls^Piti^aon^ck: A^an^gy^{e Outline}
• W_▼eigShtu: ArfpapcroexiMmaoteudn0t.0D11egvriacme
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
SOT-23
0.040(1.0)
0.024(0.6)
N - Channel
0.031(0.8) Typ.
3
Dimensions in inches and (millimeters)
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phas_Oe _rh_dal_ef w_ria_nv_ge, _I6_n0_fH_oz_r,_mres_ais_titi_ove_nof inductive load.
For capacitive load, derate current by 20%
Device
RATINGS
Marking
Marking Code ^SE4812LT1
N48
Shipping
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
3000/Tape₁&₂Reel ₁₃
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
1.0
Amps
Peak ForwardMSaurxgeimCuurrment R8.3amtisnsginsgleahnaldf siTneh-wearvme al_IFC_SMharacteristics (T_A = 25^oC unless other₃w₀ ise noted)
Amps
superimposed_Son_yr_mate_bd_olo_lad (JEDEC metho_Pd)_arameter
Typical Thermal Resistance (Note 2)
RΘJA
Limit
Unit
40
℃/W
Typical Junction ^VCDapSacitance (Note 1)
Operating Tempe_Vra_Gt_Sure Range
Storage Temperature Range
Drain-Source V_Co_J ltage
Gate-Source V^To^J ltage
TSTG
-55 to +125
120
- 65 to +175
30
-55_±to₂+₀150
PF
V
℃
℃
I_D
Continuous Drain Current
6.9
A
I_DM^{CHARACTERISTICS}_{Pulsed Drain}^SY_C^M_u^B_r^O_re^L_n^F_t^{M11)20-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1}3¹0^{00-MH FM1150-MH FM1200-MH UNIT}
Maximum Forward Voltage at 1.0A DC
VF
0.50
Maximum Averag_Pe _DReverse Current at @_MT_aA_x=_im25_u℃_{m PowIeRr Dissipation}
Rated DC Blocking Voltage
@T A=125℃
0.70
TA = 25^oC _0.5
TA = 75^oC ¹⁰
0.85
2
1.44
0.9
0.92 Volts
W
mAmps
NOTES:
T_J, T_stg
Operating Junction and Storage Temperature Range
1- Measured at 1 M_RH_θJZ_Cand applied reverse v_Jo_ulta_ng_ce_tio_of_n4_-.0_toV_-D_CC_a. _{se Thermal Resistance}
2- Thermal Resistance From Junction to Ambient
R_θJA
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
-55 to 150
24
62.5
o_C
o_C/W
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in² 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.