SE3415 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
SO_1.T_0A-2_SU3_RP_FAl_Ca_Es_Mt_Oic_U-_NE_T n_SCc_Ha_Op_TTs_Ku_Y l_Ba_At_Re_RIEM_RO_RES_CTF_IFE_IET_RS_{S -20V- 200V}
SOD-123+ PACKAGE
FM120-M
SE3415 ^THRU
FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
P-Chann•eLlo2w0p-oVw(Der-lSos)sM, hOigSh FefEficTiency.
• High current capability, low forward voltage drop.
• High surge capability.
FEATUR•EGuardring for overvoltage protection.
Exce^•lle^Un^ltrt^aR^h_D^ig_S^h_(O^-s_N^p₎,^eelo^dw^swg^ita^ct^heⁱⁿc^gh^. arge,low gate voltages
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
APPLIC_•A_R^MT_o^II_H^LO^-_S^SN_p^TS_r^D_od^-1_uc⁹_t⁵_f⁰_o⁰_r
/228
packing
code
suffix
"G"
Load s_Hw_ali_otc_geh_na_frn_eed_pi_rn_odP_ucW_{t f}M_{or p}a_ap_ckp_inli_gca_coto_dep_sn_us_{ffix "H"}
Mechanical data
Pb-Free^{• E}p^pa^oxc^yk^:a^Ug^L9e^4-i^Vs⁰a^rav^tea^dil^fa^lab^ml^ee^retardant
• Case : Molded plastic, SOD-123H
RoHS product for packing code suffix ”G”
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Halogen free proMduetchtodfo2r02p6acking code suffix “H”
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
SOT-23
1. GATE
2. SOURCE
3. DRAIN
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTER^DISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
G
MARKING: R15 ^RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
12
13
14 ^S
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200
Ma^Mx^ai^xm^imuu^mm^RMra^St^Vin^olg^tas^ge(T_a=25℃ unless otherw^Vi^Rs^Me^S note¹⁴d) ²¹
28
35
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
56
70
105
140
80
100
150
200
Maximum Average Forward_PR_ae_rc_ati_mfied_etC_eu_rrrent
IO
Symbol
Value ^1.0
Unit
D^Pr^ea^ai^kn-^FS^oro^wu^ar^rc^de^SuV^rgo^elt^Ca^ug^re^{rent 8.3 ms single half sine-wave}
superimposed on rated load (JEDEC method)
G_Ta_yt_pe_ic-_aS_l o_Tu_herc_rme_aV_{l R}ol_et_sa_ig_ste_{ance (Note 2)}
CToynpitcinaluJouunsctiDonraCinapCacuitrarnecnet ((Nt≤o1te01s))
M^Oa^px^ei^rm^atuⁱⁿm^{g T}P^eo^mw^pee^rr^atD^uri^ess^Rip^ana^gti^eon (t≤10s)
T^Sh^te^orr^am^geal^TR^emes^peis^rata^tun^rc^ee^Rafrⁿo^gm^e Junction to Ambient
IFSM
RΘJA
CJ
TJ
TSTG
V_DS
V_GS
I_D
P_D ^{-55 to +125}
R_θJA
-20
30
±8
40
-4.0 120
0.35
- 65 to +175
357
V
A
-55 to +1_W50
℃/W
Operating Junctio_Cn_HT_Ae_Rm_Ap_Ce_Tr_Ea_Rtu_ISr_Te_ICS
S^Mto^ar^xa^img^ue^mT^Fe^om^rwp^ae^rdra^Vt^ou^lr^tae^{ge at 1.0A DC}
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-^TMJH FM130-MH FM140-MH FM150¹-M⁵H⁰FM160-MH FM180-MH FM1100-^℃MH FM1150-MH FM1200-M
VF
T_STG
0.50
-55 ~⁰+^.71⁰50
0.85
℃ ^0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.