SE3407 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
SO₁T_.0-_A2_S3_URP_FAla_CEs_Mti_Oc_U-_NE_Tn_SCc_Ha_Op_Ts_TKu_Yl_Ba_At_Re_RIM_ERO_RES_CF_TIE_FIET_RS_{S -20V- 200V}
SOD-123+ PACKAGE
FM120-M+
SE3407 ^THRU
FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
P-Chann^•e^Ul ^lE^tran^hhⁱa^gn^h-c^se^pm^eee^dn^st^wM^itco^hdⁱⁿe^g.Field Effect Transistor
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
General
•^DR^Meo^IsH^Lc-S^Srp^Tir^pDo^td^-i1u^oc⁹ⁿt⁵f⁰o⁰r
/228
packing
code
suffix
"G"
The SE34^H0^a7^lou^gs^enes^frea^ed^pv^roa^dn^uc^cte^fod^r t^pr^ae^cn^kic^ngh^ct^oe^dc^eh^sn^uo^ffil^xo^"g^Hy^" to provide excellent
R_DS(on) with^Mlo^ew^cg^hat^aeⁿcⁱh^ca^arg^le^d. ^aTh^tais device is suitable for use as a load
switch or in^• P^EW^poM^{xy :}a^Up^Lp⁹l⁴ic^-a^Vt⁰io^ran^ts^e.^{d flame retardant}
• Case : Molded plastic, SOD-123H
Pb-Free
pa•cTkearmgienailss
:aPvlaateildatbelreminals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
SOT-23
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
RoHS product for pac^Mki^en^tg^hoc^do²d⁰e²⁶suffix ”G”
Halogen fre^•e^Pop^lr^ao^rid^tyu^:c^Itⁿf^do^icr^ap^tea^dc^bk^yin^cg^athc^oo^dd^ee^bs^au^ndffix “H”
• Mounting Position : Any
Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
M_MA_aR_ximK_uI_mN_RG_M:_S3_V4_o0_lta7_ge
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
18
10
115 120
80
100
150
200
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
IO
1.0
Max^Psuei_pm^aekru_iFmom_prwosaer^rdda^Soti_nun^rrgag^etes^Cdul(_orrT_aedna^t=_(J82_E.3D5^mE℃_Cs ^smiu^negn_tlhel_oe^hda)s^lfs^sino^e-t^wh^ae^verwi^Is^FSe^Mnoted)
30
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Capacitan_Pc_ae_r(_aN_mote_et1_e)_r
Operating Temperature Range
Dr_Sa_ti_on_r-_aS_go_e u_Tr_ec_me_pV_ero_al_tt_ua_rege_Range
CJ
TJ
TSTG
Symbol
-55 to +125
V_DS
Value ¹²⁰
-30 _{- 65 to +175}
Unit
-55 to +150
V
Gate-Source Voltage
Continuous Drain C^Cu^Hr^Are^Rn^At^CTERISTICS
Maximum Forward Voltage at 1.0A DC
Po_Mw_ae_xr_imD_ui_mss_Aip_vea_rt_aio_gen _{Reverse Current at @T A=25℃}
Th_Re_ar_tm_eda_Dl R_Ce_Bs_lois_ckta_inn_gc_Ve_of_ltr_ao_gm_e Junction to_@A_Tm_A=b₁i₂e₅n_℃t
V_GS
±20
V
SYMBOL
VF
FM120_ID-MH
FM130-MH FM140-MH
0.50
FM15_-0₄-M_.1H FM160-MH
0.70
FM180-MH FM1100_A-MH
0.85
FM1150-MH
0.9
FM1200-M
0.92
P_D
IR
350
0.5
mW
R_θJA
357
10
℃/W
Ju_Nn_Oc_Tti_Eo_Sn_: Temperature
T_J
150
℃
St1o-rMaegaesuTreedmapt 1eMraHtuZraend applied reverse voltage of 4.0 VDC.
T_stg
-55~+150
℃
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.