SE3406 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
SO₁T_.0-_A2_S3_URP_Fl_Aa_Cs_E t_Mi_Oc_U-E_NTn_Sc_Ca_HOp_Ts_TKu_Yla_BAte_RRM_IERO_RS_ECF_TE_IFIT_ERS_{S -20V- 200V}
SOD-123+ PACKAGE
FM120-M
SE3406 ^THRU
FM1200-M
Pb Free Produ
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
N-Channe_• l_LE_ownh_pa_own_ec_re_lm_ose_s,n_ht_igM_ho_ed_ffe_iciF_enie_cl_yd_. Effect Transistor
• High current capability, low forward voltage drop.
• High surge capability.
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
DESCRIP^•T^GIO^uaN^{rdring for overvoltage protection.}
• Ultra high-speed switching.
The_•S_SE_ili3_c4_on06_epu_its_ae_xiaa_l d_pv_laa_nn_ac_{r c}e_hd_ipt_,r_men_ec_tah_{l s}t_ie_lic_coh_nn_jo_ul_no_cg_tiy_ont_.o provide excellent
• Lead-free parts meet environmental standards of
R_DS(ON) a^Mnd^IL-lo^Sw^TDg^-1a⁹t⁵e⁰c⁰h^/2a²r⁸ge. This device is suitable for use as a
• RoHS product for packing code suffix "G"
1. GATE
2. SOURCE
3. DRAIN
0.071(1.8)
0.056(1.4)
load swit^Hc^ah^loo^gr^enin^freP^eW^prM^odua^cp^{t f}p^orli^pc^aa^ct^kioⁱⁿn^gs^c.^{ode suffix "H"}
Mechanical data
Pb-Fre•eEppaoxcyk:aUgLe94i-sV0arvataeidlaflbamlee retardant
RoHS p^•r^Co^ad^su^ec^: t^Mf^oo^ldr^ep^da^pc^lak^sin^ticg^{, S}c^Oo^Dd^-e¹²s³u^Hffix ”G”
,
Haloge^•n^Tf^er^re^meⁱⁿp^alr^so^:d^Pu^lac^tet^dfo^ter^rmpⁱaⁿc^alk^si^,n^sg^oldc^eo^rd^abe^les^pu^ef^rfi^Mx^IL“^-H^S”^TD-750
y _{Method 2026}
• Polarity : Indicated by cathode band
r _{• Mounting Position : Any}
a _{• Weight : Approximated 0.011 gram}
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
in ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
lim ^{MARKING: R6RATINGS}
Marking Code
Maximum Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
e _{MMaaxxiimmuummDCrBalotcinkinggsV(oltTagae=25℃ unless otherVwDCise no2t0ed) 30}
40
50
60
56
70
105
140
80
100
150
200
r _{Maximum Average Forward Rectified Current}
IO
1.0
P ^{Peak Forward Surge Current 8.P3amrsasmineglteehralf sine-wave} _IFSM
Symbol
Value
Unit
30
s_Du_rp_ae_ir_nim_-Spo_os_ued_rco_en r_Va_ote_ld_talo_ga_ed (JEDEC method)
V_DS
30
V
T_Gy_ap_tic_ea_-l_ST_oh_ue_rrm_ceal_VR_oe_ls_ti_ast_ga_ence (Note 2)
Typical Junction Capacitance (Note 1)
O^Cp^oeⁿr^taⁱtⁿin^ug^oT^ue^sm^Dpe^raraⁱⁿtur^Ce ^uR^ra^rn^egⁿe^t
RΘJA
CJ
TJ
V_GS
I_{D-55 to +125}
±20 ⁴⁰
120
3.6
V
-55 to +15^A0
SDtroaraingeCTuermrepnetr-aPtuurelsReadng(neote 1)
TSTG
I_DM
15 - 65 to +175
A
Power Dissipation
P_D
0.35
W
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
M^Ta^hx^eim^rmum^al F^Ro^erw^sa^isrd^taVⁿo^clt^eag^fe^roa^mt 1^J.0^uAⁿD^ctC^{ion to Ambient} VF
R_θJA
0.50
3_0.5₇7₀
0.85 ^℃/W 0.9
0.92
M^Juaⁿxi^cm^tiu^omⁿA^Tv^ee^mrag^pe^erR^ae^tv^ue^rr^ese Current at @T A=25℃
IR
R_Sa_tote_rd_agD_eC _TBl_eo_mck_pin_eg_rV_ao_tult_ra_ege
@T A=125℃
T_J
T_STG
150 _0.5
℃
-55~ +150 ¹⁰
℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.