SE3404 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
1^S.0^OA S^TU^-R²F³AC^PE^lM^aO^sU^tNⁱT^cS^-ECHⁿO^cTT^aK^pY^sB^uAR^laRI^tE^eR R^MEC^OT^SIFI^FER^ES^T-2^S0V- 200V
SOD-123+ PACKAGE
FM120-M+
6(^T^HRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
N-ChoaptnimneizleEbnoahradnscpeacmee. nt Mode Field Effect Transistor
Package outline
SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
DES^{• H}CⁱR^ghIP^suT^rI^gO^e N^capability.
• Guardring for overvoltage protection.
• U_Tltr_ha_ehi_Sgh_E-₃sp₄e₀e₄d _usw_si_etc_ahi_dn_vg_a. _{nced trench technology to provide excellent}
• Silicon epitaxial planar chip, metal silicon junction.
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
R_DS^•_(O^L_N^e₎^aa^d-n^frd^eelo^pw^artg^sa^mte^eec^th^ea^nvrg^iroeⁿ.^mT^ehⁿis^tald^se^tavⁿic^de^ari^ds^s s^ou^f itable for use as a load
MIL-STD-19500 /228
swit^•c^RHh^oao^Hlor^Sgei^pn_nrofP_rdeuW_ectpM^froorda^pup^acctp^kfl_oiiⁿc_rgpa_act^ocio_kdin^ens_gs.^ucT^fofih_dxee^"Gss_u"o_ffiu_x r_"c_He_" leads are separated to allow a
1. GATE
2. SOURCE
3. DRAIN
Kelv^Min^ec^co^hnn^aeⁿcⁱti^con^alto^dt^ahe^tasource,which may be used to bypass the source
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
indu•cCtaansece: M. olded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Pb-Free packa_Mg_ee_thi_os_da₂v₀a₂₆ilable
0.031(0.8) Typ.
0.031(0.8) Typ.
RoH•SPoplaroridtyu:cItnfdoicrapteadckbiyncgatchooddee bsaunffdix ”G”
Dimensions in inches and (millimeters)
Halo• gMeonunfrteineg Pproosditiuocnt:fAonrypacking code suffix “H”
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For cMapAacRitiKveINloaGd:, dRe4rate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
MaMximauxmimReucmurrernat tPienagk sRe(vTer_as=e2V5ol℃tageunless othVReRrMwise 2n0oted)30
40
50
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
18
10
115 120
80
100
150
200 Volts
56
70
105
140 ^Volts
Maximum DC Blocking Voltage _Parameter
VDC
20 _Symb30_ol
40
50
6_V0_alue 80
100 _Un1_it50
200 ^Volts
Maxi_Dm_ru_am_inA_-sve_or_ua_rg_ce_eF_vor_ow_lta_ar_gd _eRectified Current
IO
V_DS
30 ^1.0
V
Amps
Peak_GF_aor_tw_ea_-srd_oS_uu_rr_cg_ee C_vu_or_lr_te_an_gt _e8.3 ms single half sine-wave
supe_Crim_op_no_ts_ined_uoon_ur_sat_ded_ralo_inad_c(_uJE_rrD_eE_nC_t m_(te_≤th₁o₀d_s) ₎
Typical Thermal Resistance (Note 2)
Typic^Pa^ul J^lsu^en^dcti^don^raCⁱⁿap^ca^uc^rit^ra^enⁿc^te^*(Note 1)
IFSM
RΘJA
CJ
OperPatoinwgeTredmispesriaptautrieoRnange
TJ
Stora_Tg_he_eT_re_mm_ap_le_rr_eat_su_ir_se_taR_na_cn_ege_{from junction to ambient}TSTG
V_GS
I_D
I_DM
-5_P5_Dto +125
R_θJA
±20 30
5.8
40
30 ₁₂₀
0.35
3^-5⁶7^{5 to +175}
V
A
A
-55 to +150 _W
℃/W
Amps
℃/W
PF
℃
℃
Junction temp_Ce_Hr_Aa_Rtu_Ar_Ce_TERISTICS
SYMBOL FM120-MH FM^T1^J30-MH FM140-MH FM150-MH F¹M⁵16⁰0-MH FM180-MH FM1100-MH FM^℃1150-MH FM1200-MH UNIT
MaxiSmtuomraFgoerwtaermd Vpoelrtaagtueraet 1.0A DC
VF
T_stg 0.50
0-.7505~ 150
0.85
℃^0.9
0.92 Volts
Maximum Average Reverse Current at
Ra*teRd eDpCeBtiltoivcekinrgatVinoglta:gePulse width
@T A=25℃
IR
@limTiAte=1d2b5℃y maximum
junction
temperature.
0.5
10
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.