SE3401 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – S OT-23 Plastic-Encapsulate MOSFETS

WILLAS
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SOD-123+ PACKAGE
FM120-M
SE340 ^THRU
FM1200-M
Pb Free Produ
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
• High surge capability.
P-Channe^• l^GE^un^arh^da^rinⁿc^ge^fom^r e^ovn^et^rvM^oo^ltad^ge^eF^prie^otld^ecE^tioffⁿe^. ct Transistor
• Ultra high-speed switching.
SOT-23
• Silicon epitaxial planar chip, metal silicon junction.
FEATURE^{• Lead-free parts meet environmental standards of}
MIL-STD-19500 /228
z High•dReonHsSeprcoedullcdt feosr piganckifnogrceoxdetrseumffixel"yG"low R_DS(ON).
z Excep^Hti^ao^lon^ga^elⁿo^frn^e-^ere^prs^oi^ds^ut^ca^tn^foc^re^paa^cn^kid^ngm^coa^dx^eim^sufu^fim^{x "H}D^" C current capability
z _Pb-F^M_re^e_e^c_p^h_a^a_cⁿ_ka^ic_ge^al_is^d_a^a_v^t_a^a_ilable
• Epoxy : UL94-V0 rated flame retardant
RoHS product for packing code suffix ”G”
• Case : Molded plastic, SOD-123H
Halo_•g_Te_en_rmfr_ine_ae_lsp_:Pro_lad_teu_dc_tt_erf_mor_inp_ala_sc_{, s}k_oin_ldg_erc_abo_ld_ee_pes_ru_Mf_If_Lix_-S“_TH_D”_-750,
0.031(0.8) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MARKING: R1 _{MAXIMUM RATINGS AND ELECTRICAL CHARACTER}^D_ISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
RATINGS
G
SYMBOL FM120-MH FM130-MH FM140_S-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
Max_Mim_axu_imm_umr_Da_Cti_Bn_log_cs_kin(_g T_Voal=_ta2_ge5℃ unless otherwi_Vs_De_C noted₂₀)
30
40
50
60
56
70
105
140
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Curre^Pnt^a8^r.3^amms^es^ti^eng^rle half sine-wave
Drasiunp-eSriomuprocsedVoonlrtaategdeload (JEDEC method)
Symbol
IFSM
V_DS
Value
30
-30
Unit
V
Gat^Te^y-^pS^ico^au^{l T}rc^he^ermVo^allt^Ra^eg^se^{istance (Note 2)}
Con^Tt^yi^pnⁱu^cao^lu^Js^unD^ctrⁱa^onin^CC^apu^ar^cre^itanⁿt^{ce (Note 1)}
Operating Temperature Range
Pow_Ste_or_raD_geis_Ts_eip_ma_pt_eio_ran_{ture Range}
RΘJA
CJ
TJ
TSTG
V_GS
I_{D -55 to +125}
P_D
±12
40
120
-4.2
V
-55 to +^A150
350 _{- 65 to +175}
mW
Thermal Resistance from Junction to Ambient (t<5s)
R_θJA
357
℃/W
Junction Temperatu^Cre^{HARACTERISTICS}
Maximum Forward Voltage at 1.0A DC
SYMBOL
VF
FM12_T0_J-MH
FM130-MH FM140-MH
0.50
FM1₁5₅0-₀MH FM160-MH
0.70
FM180-M₀H_.8F₅M110_℃0-MH
FM1150-MH
0.9
FM1200-M
0.92
Sto_Mra_ag_xie_mT_umem_Avp_ee_rara_gt_eu_Rre_{everse Current at @T A=25℃}
IR
T_STG
-55~+150 _0.5
℃
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.