SE3080 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – 30V,80A N-Channel MOSFET

WILLAS
SE3080
30V,80A N-Channel MOSFET
General Description
The SE3080 uses advanced trench
technology and design to provide excellent
RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
Features
● V_DS= 30V，I_D = 80A
R_DS(ON) < 7.5mΩ (V_GS = 10V)
R_DS(ON) < 10mΩ (V_GS = 5V)
Revision:A
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● RoHS product for packing code suffix "G"
● Halogen free product for packing code suffix "H"
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous
Drain Current Continuous（T_c=100℃）
Pulsed Drain Current
Total Power Dissipation
Single pulse avalanche energy（Note 5）
Operating Junction Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance ,Junction-to-case（Note 2）
Symbol
V_DS
V_GS
I_D
I_D（100℃）
I_DM
P_D
E_AS
T_J
Rating
30
±20
80
50
170
83
150
-55 to 175
Symbol
Typ
Max
Rθ_JC
1.8
-
Units
V
V
A
A
A
W
mJ
°C
Units
°C/W
2012-07
WILLAS ELECTRONIC CORP.