SE2312 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
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SOD-123+ PACKAGE
FM120-M+
SE2312 ^THRU
FM1200-M+
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
N-Chan_•n_Gel_u2_ar0_d-_rV_in(_gD_fo-S_{r o})_vM_erO_voS_ltaF_gE_eT_protection.
• Ultra high-speed switching.
APPLIC_••A_LST_eilI_aiO^cdo-N^nfrS_{eeepiptaaxritaslmpleaentaerncvhiripo,nmmeetnatlaslislitcaonndjaurndcstioofn.}
z DC/D^MC^ILC^-So^Tn^Dv^-1e⁹rt⁵e⁰r⁰s^/228
z Loa^•d^RHS^oaHlw_oSgi_et^pc_nrh^ofrdi_en^ueg^ctpff_rooo^rdr^puP^accto^kfor^inrta^gpb_acocle_kdienA_gsp^ucfp_ofidl^xi_ec^"Ga_su"ti_fo_fixn_"s_H"
z _{Pb-MFreecehpaancikcaagl edaistaavailable}
RoH^{• E}S^pop^xr^yo^: d^ULu⁹c⁴t^-Vfo⁰ r^rap^tea^dc^flk^ai^mn^eg^rec^tao^rd^dae^ntsuffix ”G”
Hal^•o^Cg^ae^sen^: f^Mre^ole^dep^d r^po^lad^su^ticc^,t^Sf^Oo^Dr^-1p²a³c^Hking code suffix “H_, ”
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
MARKING: S12 _RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
M^Ma^axx^imim^umu^Dm^{C B}ra^lot^ci^knⁱⁿg^gs^Vo(^ltT^ag_a^e=25℃ unless other^Vw^Di^Cse no²t⁰ed) ³⁰
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8_P.3_am_ras_msin_eg_tl_ee_rhalf sine-wave
superimposed on rated load (JEDEC method)
Drain-Source Voltage
Typical Thermal Resistance (Note 2)
G_Ta_yt_pe_ic-_aS_lo_Ju_unrc_cte_ioV_n o_Cl_ata_pag_ce_{itance (Note 1)}
C^Oo^pn^et^ri^an^tuⁱⁿo^gu^Ts^emD^pra^erin^atuC^reur^Rr^aeⁿn^gt^e
P^Su^tl^os^re^agd^eD^Tr^ea^min^peC^rau^turr^reen^Rt^ange
IFSM
RΘJA
CJ
t^T=^J5s
TSTG
Symbol
V_DS
V_GS
I_D ^{-55 to +125}
I_DM
Value ₃₀
20
40
±8.0 120
5
- 65 to +175
20
Unit
V
-55 to +150
A
Continuous SourcCeH-DArRaAinCTDEiRodISeTICCuSrrent
SYMBOL FM120-M^ISH FM130-MH FM140-MH FM150-M¹H^.0F⁴M160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
M^Ma^ax^xiⁱm^muu^mm^FP^oro^ww^are^dr^VD^oi^ls^tas^gi^epa^at^tio^1.n^{0A DC}
Maximum Average Reverse Current at @T A=25℃
Thermal Resistance from Junction to Ambient
Rated DC Blocking Voltage
@T A=125℃
t=^V5^F s
IR
P_D
R_θJA
0.50
0₀.7_.30₅
0.85
W ^0.9
0.92
0.5
357 ₁₀
℃/W
Junction Temperature
T_J
150
NOTES:
℃
S₁t_-o_Mra_eag_se_urT_ede_am_{t 1}pe_Mr_Ha_Ztu_ar_ne_{d applied reverse voltage of 4.0 VDC.}
T_stg
-50 ~+150
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.