SE2306 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
SO_1.0T_A-_S2_U3_RFP_ACla_Es_Mt_Oi_Uc_N-_TE_Sn_Cc_HOa_Tp_TKs_Yu_Bl_Aa_Rt_Re_IEM_{R R}O_ECS_TF_IFE_IERT_SS_{-20V- 200V}
SOD-123+ PACKAGE
FM120-M+
SE2306 ^THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Package outline
SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
N-C_•h_Ga_un_an_rde_rl_in3_g0_f-_oV_r (_oD_ve-S_rv)_olM_taO_geS_pF_roE_teT_ction.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
FEA^•T^LU^eR^adE^{-free parts meet environmental standards of}
T_•r_R^Me_on^I_H^Lc^-_Sh^S_pF^T_r^DE_od^-T¹_uc⁹P_t⁵_fo⁰_o⁰_rw_p^/e²_ar_c²_k⁸M_ingO_cS_odF_eE_sT_{uffix "G"}
Halogen free product for packing code suffix "H"
SOT-23
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
APP^•L^EI^pC^oA^xyT^:IO^ULN⁹S^{4-V0 rated flame retardant}
z ^•L^Co^aa^sd^{e :}S^Mw^oi^lt^dc^eh^d f^po^lar^sP^tio^c,r^Sta^Ob^Dle^-1D²³e^Hvices
,
z ^•D^TC^er/^mDⁱⁿC^alC^{s :}o^Pn^lav^te^er^dte^ter^{rminals, solderable per MIL-STD-750}
Method 2026
y _{z •PPbol-aFrirtye:eIndpicaactekdabgy ecatihsodaevbaainldable}
r _{•RMooHunStingpProosdituiocnt:fAonry packing code suffix ”G”}
a _{•HWaelioghgte: Anppfrreoxeimparteodd0u.0c1t1fgorarmpacking code suffix “H”}
0.024(0.6)
0.031(0.8) Typ.
1. GATE
0.031(0.8) Typ.
2. SOURCE
3. DRAIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
in _{Ratings at 25℃ ambient temperature unless otherwise specified.}
Si_Mng_Ale_Rph_Ka_Is_Ne _Gha_:lf_Sw₆ave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
lim ^RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
e _{Maximum DC Blocking Voltage}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
r _{Maximum Average Forward Rectified Current}
IO
1.0
P ^{MPeaaxkiFmorwuamrd SruargteinCgursren(ta8t.3TmAs=si2ng5le℃haluf sninlee-wsasveoth}_IF^e_SM^{rwise noted)}
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (N_Po_ate_ra2_m) _eter
Typical Junction Capacitance (Note 1)
O^Dp^re^araⁱⁿti^-n^Sg^oT^ue^rm^cp^ee^vra^otu^ltr^ae^gR^eange
SGtoaratege-SToeumrpceeraVtuoreltaRgaenge
RΘJA
CJ
TJ
TSTG
Symbol
V_{D-S55 to +125}
V_GS
Value ⁴⁰
120
30
±20- 65 to +175
Unit
-55 to +150_V
Continuous Drain Current (T_J=150℃)^a,b
CHARACTERISTICS
M^Pa^uxi^lm^seu^dm^DFo^rarwⁱⁿar^Cd ^uV^ro^rl^etaⁿg^te at 1.0A DC
I_D
3.16
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
I_DM
0.50
0.²7⁰0
0.85
A _0.9
0.92
MCaoxinmtiunmuoAuvesraSgoeuRrecveeCrseurCreurnret(nDt iaotde@CT Ao=n2d5u℃ction)^a,b_IR
I_S
0.62 0.5
R_Mat_ae_xd_imDC_umBlo_Pck_oin_wg_eV_ro_Dlta_isg_se_ipation^a,b @T A=125℃
P_D
0.75 ¹⁰
W
NTOhTeErSm: al Resistance from Junction to Ambient (t≤5s)
1-_OM_pe_ea_rs_aur_te_ind_gat_J1_uM_nH_ctZ_ioa_nnd_aa_np_dpli_Sed_tore_rave_grs_ee_Tvo_el_mtag_pe_eo_rf_a4_t._u0_rV_eD_RC._ange
Not²e^- s^Th:^{ermal Resistance From Junction to Ambient}
R_θJA
T_J, T_stg
100
-55 to150
℃/W
℃
a. Surface Mounted on 1” ×1” FR4 board, t≤5s.
b. Pulse width limited by maximum junction temperature.
2012-06
2012-10
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.