SE2305 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
SO1.0TA-S2U3RFPAClaE sMOtiUcN-TESnCHcOaTpTKsYuBlAaRtReIEMR ROECSTFIFEIERTSS-20V- 200V
SOD-123+ PACKAGE
FM120-M
SE2305 ^THRU
FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
P-Channe_•l _H8_i-_gV_h(_sD_u-_rgS_e)_cM_apO_aS_biF_litE_y.T
• Guardring for overvoltage protection.
FEATURE^{• Ultra high-speed switching.}
Trench^•F^SE^iliT^coPⁿo^ew^pie^tar^xM^ialO^plS^anF^aE^r T^{chip, metal silicon junction.}
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
APPLICAT^MIO^eN^cS^{hanical data}
z Load ^•S^Ew^pi^otc^xyh^:f^Uo^Lr⁹P⁴o^-Vr⁰ta^rb^al^te^edD^fle^amvi^ece^res^tardant
z DC/D^•C^CC^aso^en^:v^Me^or^lt^de^er^{d plastic, SOD-123H}
z
,
Pb-F^•r^Te^ee^rmpⁱⁿa^ac^lsk^:Pa^lg^ate^edi^ts^ermaⁱvⁿa^ali^sl^,a^sb^oll^de^{erable per MIL-STD-750}
Method 2026
RoHS_{• P}p_olr_ao_rid_tyu_:c_Int_df_io_car_tep_da_bc_yk_ci_an_thg_odc_eo_bd_ae_ndsuffix ”G”
Halog• Menoufnrteineg Pporsoitdioun c: Atnfyor packing code suffix “H”
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING: S5 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
Max_Mi_am_xiu_mum_m r_Da_Ct_Bin_log_cks_ing(T_Vao=_lta2_g5_e℃ unless otherwis_Ve_DCnoted₂₀)
30
40
50
60
56
70
105
140
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Parameter
Peak Forward Surge Current 8.3 ms single half sine-wave
Drasuinp-eSrimopuorsceed Vonorlatategdeload (JEDEC method)
Ga^Tte^yp-S^icao^lu^Tr^hc^ee^rmV^ao^l l^Rta^eg^se^{istance (Note 2)}
Co^Tn^yt^pin^icu^ao^l u^JusⁿD^ctir^oaⁿin^CaC^pu^ar^crⁱe^tanⁿt^{ce (Note 1)}
Operating Temperature Range
Co_Sn_tt_oin_rau_go_eu_Ts_emS_po_eu_rr_ac_tue_r-_eD_Rra_anin_geDiode Current
IFSM
RΘJA
CJ
TJ
TSTG
Symbol
V_DS
V_GS
I_{D -55 to +125}
I_S
Value
30
-8
±8
40
-4.1
120
-0.8 _{- 65 to +175}
Unit
V
-55 to +_A150
Maximum Power Dissipation
P_D
0.35
W
Thermal Resistance^CHfr^Ao^Rm^AJ^Cu^Tn^Ec^Rt^Ii^So^Tn^ICto^S
Maximum Forward Voltage at 1.0A DC
Ambient(t≤1^S0^Ys^M) ^BOL
VF
FM1_R20_θ-_JM_A H
FM130-MH FM140-MH
0.50
FM1₃50₅-M₇H FM160-MH
0.70
FM180-M₀H_.8F₅M11_℃00_/-_WMH
FM1150-MH
0.9
FM1200-M
0.92
Jun_Mc_at_xio_imn_uT_me_Am_vep_re_ar_ga_etu_Rr_ee_{verse Current at @T A=25℃}
IR
T_J
150
0.5
℃
StoRraatgede DTCemBlopcekriangtuVroeltage
@T A=125℃
T_STG
-50 ~+150 10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.