SE2304 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
SO₁T_.0-_A2_S3_URP_FAla_Cs_E t_Mi_Oc_U-_NE_Tn_Sc_CHa_Op_Ts_TKu_Yla_BAte_RRM_IERO_RS_ECF_TE_IFIT_ERS_{S -20V- 200V}
SOD-123+ PACKAGE
FM120-M
SE2304 ^THRU
FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
N-Channel_o3_pt0_im-V_iz(_eD_b-_oS_a)_rdM_sO_paS_ceF_.ET
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
FEATURE^{• High surge capability.}
Trench^•• F_UGE_lutraT_ardhP^riigo^nhw^g-sfe^opr^reoM_evdO^esrS^vwoiF_tlctE^ahgT_inegp. ^rotection.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
APPLICA^MTI^eO^cN^hS^{anical data}
z Load^•S^Ew^poit^xc^yh^{: U}fo^Lr⁹P^4-o^Vr⁰ta^rab^tl^ee^d D^flae^mv^eic^re^es^tardant
z DC/D^•C^CaC^so^en^: v^Me^or^ldte^er^{d plastic, SOD-123H}
,
z _Pb-F^•_r^T_e^e_e^rm_pⁱⁿ_a^a_c^ls_k^:P_a^l_g^at_e^ed_is^ter_a^m_vⁱⁿ_a^a_i^l_l^s_a^, _b^so_l^l_e^{derable per MIL-STD-750}
Method 2026
RoH_•S_Pp_olr_ao_rid_tyu_:c_Int_df_io_car_tp_eda_bc_yk_cin_atg_hoc_do_ed_be_ans_d uffix ”G”
Halo•gMeonunfrteineg Pporsoitdiounc:tAfnoyr packing code suffix “H”
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
SOT-23 0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
MARKING: S4 _RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Ma_Mx_aim_ximu_um_{m A}r_va_ert_ai_gn_eg_Fs_orw(T_arad=_R2_e5_ct℃_ifiedu_Cn_ul_re_res_ns_t otherwis_IOe noted)
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (^PJE^aD^raE^mC m^ete^eth^rod)
DrTayipnic-SaloTuhrecremaVl oRletasigsteance (Note 2)
G^Ta^yte^pi-^cS^ao^{l J}u^urⁿc^ce^tioVⁿo^Clt^aa^pg^ae^{citance (Note 1)}
Co^On^pt^ein^rau^tio^ngus^TeD^mr^pa^ein^ratC^uru^err^Re^anⁿt^ge
Storage Temperature Range
Pulsed Drain Current
IFSM
RΘJA
CJ
TJ
TSTG
Symbol
V_DS
V_GS
-55 to +125
I_D
I_DM
Value ³⁰
30
40
±20
120
3.3 _{- 65 to +175}
15
Unit
V
-55 to +150
A
Continuous Source^C-^HD^Ara^Ri^An^CD^TEio^Rd^Ie^STC^ICu^Srrent
SYMBOL FM120_I-M_S H FM130-MH FM140-MH FM150₀-M_.9H FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
M^Ma^ax^xim^imu^um^{m F}P^oo^rww^ae^rr^d D^Vois^lts^ai^gp^ea^ati^to¹n^{.0A DC}
VF
P_D
0.50
Maximum Average Reverse Current at
Th_Re_ar_tem_da_Dl _CR_Be_ls_oi_cs_kt_ia_nn_gc_Ve_olf_taro_gm_e Junction
@T A=25℃
t_@o _TA_Am₌b₁₂ie₅n_℃t
(t≤5s^I)^R
R_θJA
0.3^0.5⁷⁰
0.5
357
10
0.85 _W
0.9
0.92
℃/W
Storage Temperature
T_J
150
NOTES:
℃
Ju_1-n_Mct_ei_ao_sn_urT_ede_am_t p₁ e_Mr_Ha_Ztu_ar_ne_{d applied reverse voltage of 4.0 VDC.}
T_STG
-55 ~+150
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.