SE2303 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
SO_1.T_0A-2_SU3_RP_FAl_Ca_Es_Mt_Oic_U-_NE_T n_SCc_Ha_Op_TTs_Ku_Y l_Ba_At_Re_RIEM_RO_RES_CF_TIFE_IET_RS_{S -20V- 200V}
SOD-123+ PACKAGE
FM120-M
SE2303 ^THRU
FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
P-Chann_•e_Gl 3_ua0_r-_dV_ri(_nD_g-_fS_or)_oM_veO_rvS_olF_taE_gT_{e protection.}
• Ultra high-speed switching.
FEATUR^•E^{Silicon epitaxial planar chip, metal silicon junction.}
Trenc^•h^LMF^eIE^aLdT_-S-fTP^reDo^e-w_1p9e^a5rr^t0sM_0m/O_2e2S^e8tF^eE^nvT^{ironmental standards of}
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
APPLICA_• T_EI_pO_oxN_yS_{: UL94-V0 rated flame retardant}
z Load_{• C}S_aw_si_etc_: h_Mofo_ldr_eP_d o_plr_ata_stb_icle_{, S}D_Oe_Dv_-1ic₂e₃s_H
z DC/D_{• T}C_erC_mo_inn_av_lse_:r_Pte_lar_{ted terminals, solderable per MIL-STD-750,}
z _{Pb-Free pack}M_aet_gho_ed _i2_s02_a6_vailable
RoH^•S^Pop^lar^ro^ityd^:u^Inc^dt^icf^ao^tr^edp^ba^yc^ck^ati^hn^og^dec^bo^ad^nde suffix ”G”
• Mounting Position : Any
Halogen free product for packing code suffix “H”
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MA^RaR^tiK^ngI^sN^aG^{t 2}:⁵S^℃3^{ambient temperature unless otherwise specified.}
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
Maximum ratings (T_a=25℃ unless
otherwis^IOe
noted)
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load _P(J_aE_rD_aE_mC _em_te_eth_rod)
Typical Thermal Resistance (Note 2)
IFSM
RΘJA
Symbol
30
Value ₄₀
Unit
DrTayipni-cSaloJuurnccetioVnoCltaapgaecitance (Note 1)
Ga^Ot^pe^e-^rS^ao^tinu^grc^Te^emV^po^el^rt^aa^tg^ure^{e Range}
Co^Sn^toti^rn^agu^eou^Tes^mD^pr^ea^rain^tuC^reu^Rr^areⁿn^get
Continuous Source_C-D_HAra_Ri_An_CD_Ti_Eo_Rd_Ie_STC_ICu_Srrent
CJ
V_DS
TJ
V_GS ^{-55 to +125}
-30
120
±20
-55 to +1^V50
TSTG
I_D
- 65 to +175
-1.9
A
SYMBOL FM120^I-SMH FM130-MH FM140-MH FM1^-5⁰0-^.M⁸H³ FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
M^Max^ai^xm^imu^um^m P^Foo^rw^wae^rr^dD^Vi^os^lts^ai^gp^ea^ati^to¹n^{.0A DC}
VF
Th^Me^ar^xm^ima^ul^mRe^As^veis^rata^gn^ec^Re^evfr^eo^rsm^{e C}J^uu^rn^recⁿti^to^an^t to^@A^{T A}m⁼b²i⁵e^℃nt(t≤5s)^IR
Rated DC Blocking Voltage
@T A=125℃
Junction Temperature
St^No^Ora^TEg^Se^: Temperature
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
P_D
R_θJA
T_J
T_STG
0.50
0.3⁰5^.70
357
0.5
10
150
-50 ~+150
0.85 _W
0.9
0.92
℃/W
℃
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.