SE2302 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
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SOD-123+ PACKAGE
FM120-M+
SE2302THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
N_•-C_Gh_uaa_rn_dn_rie_ngl 2_fo0_r-_oV_v(_eD_rv-_oS_lt)_agM_eO_prS_oF_teE_ctT_ion.
• Ultra high-speed switching.
FE_{• S}A_iT_licU_oR_{n e}E_{pitaxial planar chip, metal silicon junction.}
• LTeraedn-fcreheFpEaTrtsPmoeweet ernMviOroSnmFeEnTtal standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
A^MPP^eL^cIC^hA^aTⁿIO^icN^aS^{l data}
z^{• Ep}L^oo^xa^y d^{: U}S^Lw⁹⁴it^-c^Vh^{0 r}f^ao^tr^edP^fo^lar^mta^eb^rl^ee^taD^rde^avⁿi^tces
z^{• Ca}D^seC^:/D^MoC^ldC^edo^pn^lv^ae^strⁱt^ce^, r^SOD-123H
,
z^{• Te}_P^rm_bⁱⁿ_-^a_F^ls_re^:P_e^lat_p^ed_a^t_c^e_k^rm_aⁱⁿ_g^a_e^ls,_i^s_s^ol_a^de_v^r_a^ab_il^le_a^p_b^e_l^r_e^MIL-STD-750
Method 2026
• Po^Rla^orit^Hy :^SIn^pdi^rc^oat^de^ud ^cby^t c^fa^ot^rho^pd^ae^cb^kanⁱⁿd^{g code suffix ”G”}
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Mo_Hun_at_li_ong_gP_eo_nsit_fi_ro_en_e: A_pny_{roduct for packing code suffix “H”}
• Weight : Approximated 0.011 gram
MARKIN^MG^A:^XS^IM2^{UM RATINGS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 Vol
VRMS
14
21
28
35
42
56
70
105
140 ^Vol
VDC
20
30
40
50
60
80
100
150
200 ^Vol
Maximum Average Forward Rectified Current
IO
1.0
Am
Peak
F^Morw^aa^xrd^imSu^urg^me C^rur^are^tnⁱⁿt 8^g.3^sms^(Tsi^an⁼gle²h⁵a^℃lf sin^ueⁿ-w^la^ev^se ^s
otherwise
IFSM
noted)
30
Am
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (NotPea2r)ameter
RΘJA
Symbol
Valu4e0
Unit
℃/W
Typic_Dal_rJ_au_innc_-Stio_on_uC_rca_epa_Vci_ota_ln_tac_ge_e(Note 1)
Operating Temperature Range
Stora^Gge^aT^tee^-m^Sp^oe^ura^rt^cu^ere^VR^oa^ln^tag^ge ^e
CJ
TJ
TSTG
-5^V5 ^Dto^S +125
V_GS
20¹²⁰
-55 to +150 _V
PF
℃
-^±6⁸5 to +175
℃
Continuous Drain Current
I_D
2.1
Continuous S^Co^Hu^Ar^Rc^Ae^C-D^TEra^Rin^ISTC^ICur^Srent(Diode
Maximum Forward Voltage at 1.0A DC
C^So^Yn^Md^Bu^Oc^Ltio^Fn^M)^{120-MH FM}I¹_S^{30-MH FM140-MH FM150-MH FM}0¹.⁶6^{0-MH FM180-MH FM1100-MH}
VF
0.50
0.70
0.85
FM^A1150-MH FM1200-MH
0.9
0.92
UN
Vol
Maxim^Pu^om^wA^ev^re^Dra^isg^seⁱR^paev^tie^orⁿse Current at @T A=25℃
IR
RatedTDhCerBmloaclkRingesViosltagnece from Jun@ctiToAn=1to25A℃mbient (t≤5s)
P_D
R_θJA
0.35_0.5
35710
W
mAm
℃/W
NOTE^OS:^{perating Junction}
T_J
150
℃
1- MeaSstuorerad gate1TMeHmZpaendraatpuprlieed reverse voltage of 4.0 VDC.
T_STG
-55 ~+150
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.