SE2301 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate MOSFETS

WILLAS
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SOD-123+ PACKAGE
FM120-M+
SE2301THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
P-Ch^•• a_HHn_iiggn_hhe_scl_uu2_rrgr0^ee-ⁿV_{ct a}(^cD_paap-_bS^aibl)_iitlyM^it.yO^{, lo}S^wF^fE^orT^{ward voltage drop.}
• Guardring for overvoltage protection.
• Ultra high-speed switching.
FEAT^• U^SiR^licE^{on epitaxial planar chip, metal silicon junction.}
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• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
APPLICATIONS
• Epoxy : UL94-V0 rated flame retardant
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so
lderable
per
MIL
,
-STD-750
z Pb-Free pa_Mc_ek_tha_og_de₂₀is₂₆available
R• PooHlaSritpyr:oIndduiccattfeodrbpyaccakthinodgecboadnde suffix ”G”
H^{• M}al^oo^ugⁿe^tinn^gf^Pre^oe^sitp^iorⁿo^:d^Auⁿc^yt for packing code suffix “H”
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MARKING:_MS_A1 _{XIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 Vol
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Vol
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Vol
Maximum_MA_ave_xr_ia_mge_uF_morw_ra_ard_tiR_ne_gct_sifie₍d_TC_au₌rr₂e₅nt_{℃ unless}IO_{otherwise noted)}
1.0
Am
Peak Forward Surge Current 8.3 m_Ps s_ain_rg_al_me h_ea_tlf_es_rine-wave _IFSM
Symbol
Value ³⁰
Unit
Am
superimposed on rated load (JEDEC method)
Typical ThDerraminal-SReosuisrctaencVeo(lNtaogtee2)
Typical Ju_Gn_act_ti_eon_-SC_oa_up_ra_cc_eita_Vnc_oe_lta(N_go_ete 1)
Operating Temperature Range
Storage T^Ce^omⁿp^teⁱⁿra^utu^or^ue^sR^Dan^rg^ae^{in Current}
Pulsed Drain Current
RΘJA
CJ
TJ
TSTG
V_DS
V_GS
-55 to +125
I_D
I_DM
-20 40
±8 ¹²⁰
-2.3_{- 65 to +175}
-10
V
-55 to +150
A
℃/W
PF
℃
℃
Continuou^Cs^HAS^Ro^Au^Crc^Te^E-^RD^ISra^Ti^In^CSDiode Curren^St^{YMBOL FM120-MH FM}I_S^{130-MH FM140-MH FM150-M}-0^H.^F7^M2^{160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN}
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Vol
Maximum Power Dissipation
Maximum Average
Rated DC^TB^hl^eo^rc^mkin^ag^l
Reverse Current at
V^Ro^elt^saⁱg^se^{tance from}
@T A=25℃
J_@u_Tn_Ac₌ti₁o₂n_5℃to
Amb^IRient(t
≤5s)
P_D
R _θJA
0.35 _0.5
357 ₁₀
W
℃/W
mAm
Junction Temperature
NOTES:
T_J
1- MeasureSdtoatra1gMeHZTeanmdpaeppralietdurreeverse voltage of 4.0 VDC.
T_stg
150
-55 ~+150
℃
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.