SCS520S-40 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOD-523 Plastic-Encapsulate Diodes

WILLAS
SOD-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
SCS520S-_T4_H0_RU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
Sch_•o_Lot_optk_wtiy^mpiB_ozwea_er^br_roi_le^aorr_sdsD_,shi^po_iagd^che^ee. _fficiency.
FEA^• T^HU^igR^h E^cuS^{rrent capability, low forward voltage drop.}
• High surge capability.
z ^{• G}S^um^ara^drllⁱⁿs^gu^fr^of^ra^oc^ve^erm^voo^ltu^agn^etin^prg^ott^ey^cp^tie^on.
• Ultra high-speed switching.
z ^{• S}L^ilo^icw^onI^e_R^{pitaxial planar chip, metal silicon junction.}
• Lead-free parts meet environmental standards of
z ^MH^ILig^-Sh^Tr^De^-l¹ia⁹b⁵⁰il⁰ity^/228
• RoHS product for packing code suffix "G"
z H^Pa^blo^-g^Fe^rn^efr^eee^pp^ar^cod^ku^ac^gt f^eorⁱp^sac^ak^vin^ag^ilc^ao^bde^lesuffix "H"
M_Re_oc_Hh_Sa_pn_roic_dua_cl_t d_foa_r t_pa_{acking code suffix ”G”}
• E_Hp_ao_lx_oy_g:_eU_nL9_fr4_e-V_e0_pr_ra_ote_dd_ucfla_t m_foe_r r_pe_ata_cr_kd_ia_nn_gt _{code suffix “H”}
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
MAR^•K^PIN^olG^ar:^ityD^{: Indicated by cathode band}
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
SOD-0.51426(33.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Maximum R_Ma_At_Xin_IMgs_UMan_Rd_AE_Tl_Ie_Nc_Gtr_Sic_Aa_Nl C_Dh_Ea_Lr_Ea_Cct_Te_Rri_Is_Ct_Aic_Ls_C, S_Hi_An_Rg_Ale_CD_TEio_Rd_Ie_ST@_ICT_SA=25℃
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resis^Pt^aiv^re^ao^mf ^ein^td^eu^rctive load.
Symbol
Limit
Unit
For_Dc_Cap_ra_ec_vit_eiv_re_sl_eoa_vd_o, _ld_taer_ga_ete current by 20%
RATINGS
Mar^Mkin^eg^aCⁿo^rd^ee^{ctifying current}
V_R
40
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
I₀₁₅
16 ^0.2 18
10 ^A
115
120
Maximum Recurrent Peak Reverse Voltage
Max^Pim^eu^am^k R^foM^rS^wV^ao^rl^dtag^se^{urge current}
VRRM
20
30
40
50
60
80
100
150
200 Volts
VRMS
14
21
28 ^IFSM35
1
42
56
70 ^A
105
140 ^Volts
Max_Pim_ou_wm_eD_r C_DB_islo_sc_ik_pin_ag_tiV_oo_nltage
VDC
20
30
40 _PD50
60 ₁₅₀ 80
10_m0 _W 150
200 ^Volts
Maximum Average Forward Rectified Current
IO
Thermal resistance from junction to ambient
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
supe^Jr^uimⁿp^cos^te^iodⁿon^tera^mted^pl^eo^ra^ad^t(^uJE^rD^eEC method)
TTyypp_Siiccaatoll TJ_ruahne_gcremtioa_tnel RC_mea_pspia_esct_rai_atnatcn_uec_re(eN(Notoete2)1)
RΘJA
CJ
Operating Temperature Range
TJ
-55 to +125
R_θJA
T_J
T_STG
1.0
667
30
125
40
-5₁₂5₀~+150
℃/W
℃
-55 to +150
Amps
Amps
℃/W
PF
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Ra^Ete^ld^ecDC^trB^iclo^ack^lin^Rg^aV^toⁱlⁿta^gge^{s @T}A⁼²⁵@^℃T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ ^Pan^ad^raap^mpl^eie^td^er^reverse voltage of 4.0 VDC^S.^ymbol
2- Th_Fe_orm_rwal_aR_re_dsis_vta_on_lc_te_agFr_eom Junction to Ambient
V_F
Reverse current
I_R
Min
Typ
Max Unit
0.39
0.55
V
1
10
μA
Conditions
IF=10mA
IF=100mA
VR=10V
VR=40V
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.