SCS481K Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – Plastic-Encapsulate Diodes

WILLAS
SO_1.0T_A-3_SU5_R3_FAP_CEla_Ms_Ot_Ui_Nc_T-E_SCn_Hc_OTa_Tp_KYs_Bu_Al_Ra_Rt_IEe_RD_REi_Co_Td_IFe_IEs_{RS -20V- 200V}
SOD-123+ PACKAGE
FM120-M+
SCS481K^THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SCHOTT^•L^LK^oY^{w p}B^rA^ofR^ileR^sI^uE^rfR^acD^{e m}IO^oD^unE^{ted application in order to}
optimize board space.
SOD-123H
• Low power loss, high efficiency.
FEATUR^•E^HS^{igh current capability, low forward voltage drop.}
z L^••o_GHw^iugac^hru_dsr_rur_irne^ggn^eft_ocr^are^poc^avt_ebi_rif^li_vic^toya_l.tt_aio_gen_protection.
z H• iUglhtrarehliigahb-islipteyed switching.
z P^•b^S-F^ilr^ice^oeⁿp^ea^pc^itk^aa^xig^ae^{l p}i^ls^ana^av^ra^cil^ha^ipb^,le^{metal silicon junction.}
R^•o^LH^eS^adp^-r^fo^red^eu^pc^at ^rfo^tsr^mpa^eeck^{t e}inⁿg^vic^rooⁿd^me ^esⁿu^tf^afi^lx^s”^taGⁿ”^{dards of}
5
4
MIL-STD-19500 /228
H•aRloogHeSnpfrroedeucptrfordpuacctkfionrg pcaodcekisnugfficxo"dGe" suffix “H”
SOT-3530.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
z MoHisatulorgeeSnefrneseitpivroitdyuLcet vfoerl p1acking code suffix "H"
Mechanical data
0.040(1.0)
MARKIN^•G^E:^p3^oxU^{y : UL94-V0 rated flame retardant}
123
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Maximum^{• T}R^era^mtⁱiⁿn^ag^lss^:Pa^lan^td^edE^tele^rmcⁱtⁿr^aic^lsa^{, s}l ^oC^ldh^ea^rar^ba^lc^et^pe^er^ri^Mst^Ii^Lc^-Ss^T, ^DS^-i⁷n⁵g⁰le Diode @Ta=25℃
y _{Method 2026}
0.024(0.6)
0.031(0.8) Typ.
r _{• PolaPriatyra: mIndeitcearted by cathode band Symbol}
• Mounting Position : Any
a _{Peak rev•eWrseeigvhotl:taAgpeproximated 0.011 gram VRM}
Limit ^{Dimensions in inches and (millimete}U^rs)nit
30
V
DC reverse
V_R
30
V
in ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
Pe_Ra_ak_tif_no_gr_sw_aa_t r₂d_5℃sur_ag_me_bic_eu_ntrr_tee_mnt_{perature unless other}I_{wFSisMe specified.}
1
A
Me^Saⁱⁿn^gr^leec^phti^afy^sein^hg^alc^f u^wr^ar^ve^en^, t^{60Hz, resistive of inductive} I^l_O^oad.
0.2
A
For capacitive load, derate current by 20%
lim Power Dissipation
RATINGS
Pd
150
mW
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
The^Mr^am^rkaⁱⁿl^gR^Ce^os^di^estance Junction to Ambient
R_θJA
12
13
14 ₆₆₇15
16
Maximum Recurrent Peak Reverse Voltage
Operating temperature
Maximum RMS Voltage
VRRM
20
30
40
50
60
T_VjRMS
14
21
28 ^-55~+3¹5²⁵
42
e _{StMoaraxigmeumteDmCpBeloracktiungreVoltage}
T_sVtgDC
20
30
40^-55~+150⁵⁰ 60
18
10 _℃/W 115 120
80
100 _℃ 150
200 V
56
70
105
140 ^V
80
100 ^℃ 150
200 ^V
r _{Maximum Average Forward Rectified Current}
IO
1.0
A
P _{Peak Forward Surge Current 8.3 ms single half sine-wave IFSM}
30
A
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Elect^Sr^ti^oc^ra^agl ^eR^Ta^et^min^pg^es^rat@^ureTa^R=^an2^g5^e℃
TSTG
- 65 to +175
Param_Ce_Ht_Ae_Rr_ACTERISTICS
Sym_SYb_Mo_Bl_{OL FM}M₁₂i₀n_{-MH FM}T₁₃y₀p_{-MH FM}M₁₄a_0-x_{MH FM1}U₅₀n_-Mit_{H FM160-MH FM18}C_0-o_Mn_Hd_Fi_Mti₁o₁₀n₀s_{-MH FM1150-MH FM1200-MH U}
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at @T A=25℃
IR
ForRwaaterddDvColBtlaogckeing Voltage
@T A=125℃V_F
0.5₀0_.28
0.33
0.43
0.70
V
I_F=⁰1^.m⁸⁵A
0.5 _IF=10mA
10
I_F=100mA
0.9
0.92 V
m
NOTES:
0.5
I_F=200mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Rev_2-e_Tr_hs_ee_rmc_au_l r_Rr_ee_sn_istt_{ance From Junction to Ambient}
I_R
30
μA
V_R=10V
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.