RS801 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes)

WILLAS
REC_RT_SI₈F₀I₁ER
THRU
1.0A S^SU^INR^GF^LA^EC^-E^PHM^AO^SU^ENT^SIS^LC^ICH^OO^NTT^BK^RY^IDBA^GR^ER^RIE^ER^CR^TIE^FC^IET^RIFIERS -20V- 200V^RS807
VOLTAGE RANGE 50 to 1000 Volts CURRENT ^S8.^O0^DA^-m¹²pe³r⁺es ^PACKAGE
FM
FM
Pb
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
FEATUR•ELSow profile surface mounted application in order to
* Low leakaogpetimize board space.
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• Ultra high-speed switching.
0.146(3.7)
0.130(3.3)
RS-6
0.012(
0.071(1
FeMaEtuCrHeAs•NSICilAicLonDeApTiAtaxial planar chip, metal silicon junction.
•
2 Amp Super Fast _•


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_ia_IUc^ias_Ln
^re_L^het^d-./₉^c_S^R_h^-₄S^of_a^o_Tr^geH_Vs^eDeⁿ_-^S_U0^eio^z_-^C_Lr_1f^ep_ld_a^od₉e_f^a_m^m_lr_5aci^r_mnp_mo^t0gl^s_a^ima_0mbinn^mp_il^t_a/f_i^(oo_t2^N_b^e_yrⁿm_2i^oe_rleai^t₈a_t^etn_tyt_i^t_ni^e1o_cg^d)nn_li⁽⁾_ar^v"eP_s^{icsr"otiSofinu}_cry^fm_a^f,i_t^x_if^e_oi^dln_ne^est#9aigE4ln_V^1as9_-^tte_O^5as7n1d1ards
of
.300
Recovery Rectifier ^(7.50)
50 to 600 Volts ^{• * Moisture•SRenosHitivSitypLreovdeul 1ct for packing code suffix "G"}
x
x
*
M^PRSboua-HprFke^Srirn^epegfa^rop:s^{datCHucsackwat}t^ah^liftoogoc^regdh^pei^einsanbg^cakas^vfin^rnpaed^{gieleaeacbodnpld}d^{eureontysddpueu}e^ffrcixn3^tu^"5fGmn^o"srbe^pr^a(^cN^koⁱⁿ'-^gL'
code suffix
Suffix)
"H"
.780(19.80)
.740(18.80)


Mechanical data Halogen free product for packing code suffix "H"
.935(23.70)
.895(22.70)
.700(17.80)
.600(16.80)
AC
0.056(1
Maximum Ratings
• ^• Operating T^Ee^pm^ope^xr^yat^:ur^Ue:^L-6⁹5⁴к^-Vto⁰+1^r7^a5^tк^{ed flame retardant}
• Storage _•Te_Cm_ape_sra_etu_:re_M: -_o6_l5_dк_et_do +_p1_la75_sк_{tic, SOD-123H}


DO-214
AC
(SMA) (LEAD
FRAME) _{0.031(0.8) Typ.}
1.00
MIN.
(25.40)
0.040(1
0.024(0
0.031
MCC
•
H
,
TermMianxaimlsum:Plated terminalsM, asxoimldumerDaCble per MIL-STD-750


.052(1.30) DIA.
.048(1.20)
M_R^P_a^aA_t^r_i^tX_n^N_gIM^u_s^m_aU^b_tM^e₂^r₅R_oCA_PT_aeRmI_aN_VekboG^c_iRelutS_an^rerg_tveA_eetⁿ_erN^ts_mMeD_peeE_trhaRL_toMu^ME_rdSC^a_e^xT_2Vu^im_nR_o0l^ult_eI_2amC_sg6sA_eoL_t
CH^BA^loR^cA^kiC^ngTERISTICS
Voltage
herwise specified.
Si_Eng_Sl₂e_Ap_-Lha^•se^P, ^oh^la^alf^riw₅^t₀^ya_Vv^:e^I, ⁿ6^d0 ⁱH^cz^a,^tr^ee^d₃si₅s^b_Vt^yive^caor^thin^od^duc^et₅i^bv₀e_V^alⁿo^dad.
.220(5.60)
.180(4.60)
J
.140
(3.50)
.280(7.10)
Dimensions in inches and (millimeters)
• F oEr Sc2aBp-aLc i t
ES2D-L
i
v_Me _ol o_ua_nd_21t,_00id_n00e_VVgr a_Pt e_oc_su_ir_tr_ie_on_n1t74b_:00yV_AV2_n0_y% .
100V
200V
.260(6.60)
ES2G-L _{• Weigh}40_t0_:V_Approxim2_a80_tV_{ed 0.011 g}4_r0_a0V_m
ES2J-L
600V
420V
600V
A
DimensionsCin inches and (millimeters)
Electrical Characteristics @ 25°C Unless Otherwise Specified
MAXIMUM RATINGS AND _MAXA_IMve_Ura_Mg_Re_AF_To_Ir_Nw_Ga_Srd_{(At TA = 2}I_F5(o_{ACV) unless} 2_o._t0_heA_rwiseT_nLo=_te1_d1₎0к
E
ELECT^FRICAL
CH^DARAC^BTERISTICS
Current
Pe^Ra^ak ^tFⁱⁿor^gw^sar^ad^tS²u⁵rg^℃e
am_RIFAb_STMie_INn_Gt_Stem₅₀p_Aeratu_8.r₃e_mu_s,n_hl_ae_lfs_ss_ino_etherw_Si_Ys_Me_Bs_Op_Le^Gcifie_RSd₈._{01 DIMERNSSIO8N0S 2}
RS803
RS804
RS805
RS806
RS807
UNITS
Ma^CMx^uaSim^rxriu_ieⁿ_mm^ng_ut^lR_m^eec^pu^hrr^aen^st^ePe^ha^ak^lfR^wev^aer^vs^ee ^,V⁶ol⁰ta^Hge^{z, resistive of inductive lo}V^aDRI^dMRM^.
INCHES
MIN
50MAX
1MI0NM0^M
MA2X00 NOT4E 00
600
800
1000 Volts
InsFtaonrtacnaepoauscitive load, derate current by 20%
A
.079
.096
2.00
B
.050
.064
1.27
2.44
1.63
Ma_Fx_oim_rwu_am_rdR_VM_oS_ltaB_gri_edge Input Voltage
VRCMS .002
35.008
.7050
.20140
D
---
.02
---
.51
280
420
560
700 Volts
Max^Eim^Su²m^A-D^LC^-EB^Sl²o^Dck^-i^Lng Voltage^VFRATIN^.9G^5VS ^IFM ^{= 2.0A;TJ=25oC}
ES2G-L
1.25V
Max^Mim^au^rm^kinA^gveE^CraS^og2e^dJ^eF-Lorward Rectified Ou1tp.7u0t VCurrent at Tc = 75^oC
withMhaeaxtimsinukm^ESR^2Je^-c^Lurrent Peak R^.₁e⁹_.⁷₂v⁵₅e^VVr^((T_Ms^ye_a^p_x⁾⁾V^Io^FMlta⁼g²e^.0A;TJ=150oC
SY_VM^E_{DF C}BOL^..003605FM1₅2₀^..000⁶⁹⁰¹-MH F₁₁^..76₀M⁶⁵₀130-M^12..53₂²²H₀₀FM140₄₀-M₀ H FM₆1₀5₀0-MH ₈F₀M₀ 160-M₁₀H₀₀ FM1_V8_o0_lt-_sMH FM1100-MH F
G
.189
.220
4.80
5.59
H
IJO
.157
.090
12.181
.115
13 ^4.00
4.60
2.25
2.92
14_8.0
15
16
1_A8_mps
10
VRRM SUG2G0ESTED SOL3DE0R
40
50
60
80
100
PsueMR_paMeeka_rvxiaFm_eimo_xrprsiuwo_memsaeCurddD_muorSCr_nueRr_nrgaMtet_AeSCd_t ul_Vorraoedn_ltt_a8_g._I3_Rems
single half
5µA
sine-wave
TA = 25к
PAD LAYOUT
V^IR^FSM^MS
14 0.090” 21
28²⁰⁰ 35
42
5^Am6 ^ps
70
R_Mat_aed_xiD_mC_uB_mlo_Dck_Cing_{Blocking Voltage}1mA T_A = 100к
OpVeorlatatingge and Storage Temperature Range
T^VJ,^DTS^CTG
20
30
40
50
-55 to + 150
60
80
100
0_C
M_Max_aim_xiu_mm_uR_mev_Ae_vrs_ee_{rage Fo}T_rwrr _{ard Re}35_cn_tis_fied I_CF=_u0_r._r5_eA_n, _tIR=1.0A,
Recovery Time
Irr=0.25A
ELETCC_PyaTp_epRia_acICac_kiAlt_FaJLun_oCnc_rewcHtAi_ao_rRn_dA_SCT_uE_rgR_eIS_CTI_uCC_rJS_re(_nA_tt T₈A_.3=1_m52p5_s^oFC_su_inn_gle_1Mls_.e0es _Mao_hst_aHhue_lzrfre,w_sdVi_is_nRea_e=tn_4-o_w.t₀e_ad_Vv) _e
Notessu: p1.erHiimghpToemspeedratuorenSr^Coald^Htee^Ar Ed^Rxe^Alom^Cap^Ttdio^En(^RAJp^IE^SplDi^Ted^IE,^CsC^See mEUeDtihreoctdive) Annex Notes 7.
IO
SY^IFM^SB^MOL
0.085”
1.0
30
RS801 RS802 R0.0S780”03 RS804 RS805 RS806 RS807 UNITS
Max_Tim_yu_pm_icF_ao_l r_Tw_har_ed_rV_mo_alta_l g_Re_eD_sr_io_sp_tap_ner_ce_ele₍m_Ne_on_tt_eat₂8₎.0A DC
Max_Tim_ypum_icaR_le_Jve_ur_nse_ctC_iou_nrre_Cnt_aa_pt_aR_ca_it_te_ad_{nce (Note 1}@₎ TA = 25^oC
DC _OBl_poc_ek_ri_ang_tinV_golt_Tag_ee_mp_per_ee_rl_ae_tm_ue_rn_et _Range
@TC = 100^oC
R^VΘ^FJA
CIRJ
TJ
1.1
5
-55 to +125 ^0.2
40
120
Volts
uAmps
mAmps_{-55 to +150}
www.mccsemi.com ^{Storage Temperature Range}
TSTG
- 65 to +175
Rev₂isi₀on₁: D_2.12
CHARACTERISTICS _{1 of 3}
WILLAS ELECTRONIC CORP. ^{SYMBOL FM120-MH FM130-M2H0F1M2/10450/-2M5H FM150-MH FM160-MH FM180-MH FM1100-MH FM}
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
0.5