MSEMFXXLC Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – Low Capacitance Quad Array for ESD Protection

WILLAS
MSEMFx^Fx^ML_T¹C_H²_R⁰_U^-M+
Low Capacitance Quad Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
Gen_•e_Lbr_oea_wttl^eprD_rroee_fvils^eerc_ssur^eri^lfp^eaact^keio^amgn_{oeucnutrerdenatpapnlidc}
thermal resistan
ation in order to
ce_F. _eatures
SOD-123H
Th^oi^ps^timin^izte^eg^br^oa^ate^rdd^sptr^aa^cn^es^. ient voltage suppressor z Four Separate Unidirectional Configurations for
• Low power loss, high efficiency.
devic_•e_H(_iT_ghV_cS_u)_rri_es_nd_t e_cas_pig_an_be_ilid_ty,fo_lor_wa_fp_op_rwlic_aa_rdti_vo_on_ls_tagre_eq_du_roir_pin_. g
Protection
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
trans^•ie^Hn^igt ^hov^sue^rr^gv^eo^clt^aa^pg^ae^bip^lir^tyo^.tection, printers, business z Low Leakage Current < 1 μA @ 3Volts
mach^•in^Ge^us^a,^rdrinc^go^fm^orm^ou^ven^ri^vc^oa^lt^ti^ao^gn^{e pro}s^ty^es^ct^te^iom^n.s, medical z
• Ultra high-speed switching.
equip_•mSielincot,n aenpidtaxoitahl eprlanaaprpclhicipa,timoentsa.l sIitlsicoinntjeugnrcatitoend. z
Power Dissipation: 380mW
Small SOT-553 SMT Package
0.071(1.8)
0.056(1.4)
desig^•n^Leap^dr^-o^frv^ei^ede^pas^rts v^me^er^ey^{t en}e^vfⁱf^re^ocⁿt^miv^ee^ntala^sn^tad^ndare^rdli^sa^ob^fle z Low Capacitance
MIL-STD-19500 /228
prote•cRtiooHnS pfroorducstefoprapraactkeing lcinodeessuuffisxi"nGg" only one z Complies to USB 1.1 Low Speed & Speed
packag^He^al.^ogT^ehⁿe^frs^ee^{e p}d^roe^dv^ui^cc^te^fos^{r p}a^ar^ce^kini^gd^ce^oa^dl^e f^so^ur^ffixs^"it^Hu^"ations
Specifications
Mechanical data
where board space is at a premium.
z Pb-Free package is available
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.024(0.6)
RoHS product for packing code suffix ”G”
• Case : Molded plastic, SOD-123H
Applications
, ^{Halogen fr0e.0e31(0p.8r)oTydp.uct for packing code suffix0.0“3H1(0”.8) Typ.}
• Terminals :Plated terminals, solderable per MIL-STD-750
z Serial and P_Ma_er_tha_oll_del₂P₀₂o₆rts
Complies with the following standards
z •MPicorlaorpitryo:cIensdsicoarteBdabsyecdatEhoqdueipbmanednt
IEC61000-4-2
Dimensions in inches and (millimeters)
z •NMotoeubnotiongksP,oDsietisoknt:oApnsy, Servers
Level 4 15 kV (air discharge)
z ^•C^Wel^elu^igla^hr^{t :}a^An^pd^prP^oxoⁱr^mta^ab^tele^{d 0}E^.q⁰¹u¹ip^gm^rae^mnt
8 kV(contact discharge)
MAXIMUM RATINGS AND ELECTRICALMCILHASRTDAC8T8E3ERI-SMTIeCthSod 3015-7 Class 3
Ratings at 25℃ ambient temperature unless otherwise specified.
25 kV HBM (Human Body Model)
Single phase half wave, 60Hz, resistive of inductive load.
F_For_uca_np_cac_ti_iti_ove_nlo_aa_ld,_dd_ie_ara_gte_rc_au_mrrent by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^V
Maximum Average Forward Rectified Current
IO
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
A
Typical Thermal Resistance (Note 2)_SOT-553
Typical Junction Capacitance (Note 1)
RΘJA
CJ
40
℃
120
Operating Temperature Range
TJ
-55 to +125
-55 to +150
St_Mora_age_xT_ie_mmp_uer_matur_Re R_aa_tn_ig_ne_{gs (TA=25°C)} TSTG
- 65 to +175
Symbol
Parameter
Value
Units
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
MaximuPm_PF_Korward VoPlteagaekaPt 1o.0wAeDrCDissipation(8×2V0Fμs@TA=25℃) 0.50
0.70
25 0.85
W 0.9
0.92 V
Maximum_PDAverage R_Sev_te_ers_ae_dC_yu_Srre_tant_teat _P@_oT_wA_e=_r2_-5₁℃_DiodeIR
Rated DC Blocking V_Tol_hta_ege_{rmal Resist}@_aT_nA_c=_e1_,2_J5℃_{unction-to-Ambient}
NOTES:^RθJA
Above 25℃, Derate
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-
Therm^Ta^Jl^mR^ae^xsistance
Maximum Junction
From Junction to Ambient
Temperature
T_J T_stg Operation Junction and Storage Temperature Range
0.5 ₃₈₀
mW
m
10 ₃₂₇
℃/W
3.05
Mw/℃
150
℃
-55 to +150
℃
T_L
Lead Solder Temperature(10 seconds duration)
260
℃
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.