|
MMBTA0XLT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – Driver Transistors | |||
|
WILLAS
FM120-M+
MMBTA0xLTT1HRU
Driver Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
⢠Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
⢠Low profile surface mounted application in order to
FoEpAtimTUizRe EboSard space.
â¢â¢LoWw epodweecrllaorses,thhiagthtehfeficmieantceyr. ial of product
⢠HicgohmcuprlrieanntcceapwaibthilitRy,oloHwSforrewqauridrevmolteangtesd. rop.
⢠HiPghbs-Furregee cpaapcakbailgitey. is available
⢠GuRaordHrSingprfoodr ouvcet rfvoor lptaagcekipnrgotceocdtieons.uffix âGâ
⢠Ultra high-speed switching.
⢠SilHicaolnogeepnitafrxeiael pplraondaurccthfoipr, pmaectkailnsgiliccoodnejusnucftfiioxnâ.Hâ
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
â¢MLAeaXdIM-frUeMe pRaArtTs ImNeGeSt environmental standards of
â¢
MIL-STD-19500 /228
RHoaHloSgepnrofRrdeuaectitpnfrgoordpuacct kfoinrgpacockdiengsucfofSidxye"mGsbu"offlix
Value
"HM"MBTA05 MMBTA06
Unit
MeCcohlleactonrâiEcmaitltedr Vaolttaage
V CEO
60
80 Vdc
SOTâ23
⢠EpCoxolyle:cUtoLrâ9B4a-Vse0Vraoltteadgeflame retarVdaCBnOt
60
80 Vdc
0.040(1.0)
0.024(0.6)
⢠CaEsme i:ttMeroâlBdaesdepVloalstatigce, SOD-123HV EBO
4.0
,
⢠TerCmoillneacltsor:CPularrtendt tâermCoinnatinlsu,osuoslderIaCble per MIL-5S0T0D-750
y Method 2026
Vdc
mAdc
0.031(0.8) Typ.
0.031(0.8) Typ.
3
COLLECTOR
r â¢TPHoElaRriMtyA: LInCdiHcaAtRedAbCyTcEaRthISodTeICbSand
Dimensions in inches and (millimeters)
⢠Mounting Position : Any
1
a Characteristic
Symbol
Max
Unit
BASE
⢠Weight : Approximated 0.011 gram
Total Device Dissipation FRâ 5 Board, (1)
in TA
=M25A°CXIMUM
RATINGS
AND
PD
225
mW
ELECTRICAL CHARACTERISTICS
Ratings at 25Dâeraatemabbieonvet t2e5m°pCerature unless otherwise specified.
1.8
mW/°C
2
EMITTER
Single phaseThhearlmf waal Rvee,s6is0taHnzc,er,eJsuisnticvteionoftoinAdumcbtiiveentload.
R θJA
556
°C/W
For capacitivTeotlaolaDde, vdiecreaDteiscsuiprraetinotnby 20%
lim Alumina Substrate, (2) TA = 25°C
Derate abRovAeT2IN5G°CS
PD
300
mW
SYMBOL FM120-MH FM130-MH FM2.1440-MH FM1m50W-M/°HCFM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking CodeThermal Resistance, Junction to Ambient
Maximum RecJuurnrecntitoPneaankdRSetvoerarsgeeVToeltmagpeerature
VRRM
1R2 θJA 13
41174
T2J0, T stg 30 â55 to4+0150
1°5C/W 16
50 °C 60
18
10
115 120
80
100
150
200 Volts
e Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 Volts
r MaximumDDECVBIClocEkinMgAVRolKtagINe G
VDC
20
30
40
50
60
80
100
150
200 Volts
Maximum Average Forward Rectified Current
IO
1.0
Amps
P MMBTA05LT1= 1H, MMBTA06LT1 = 1GM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimpoEseLdEoCn TraRteIdCloAaLd (CJEHDAECRAmeCthToEd)RISTICS (TA
=IF2S5M°C
unless
otherwise
noted.)
30
Amps
Typical Thermal ResistanceC(Nhaotreac2t)eristic
Typical Junction Capacitance (Note 1)
OperatingOTFeFmpCeHraAtuRreARCanTgEeRISTICS
RÎJA
CJ
TJ
Storage TempCeorlaletucrteorRâaEnmgeitter Breakdown Voltage(3) TSTG
Symbol
Min
Max 40 Unit
120
-55 to +125
-55 to +150
V (BR)CEO
- 65 to +17V5dc
â/W
PF
â
â
(I C = 1.0 mAdc, I B = 0)
MMBTA05
60
â
CHARACTERISTICS
MSMYBMTBAO0L6FM120-MH FM130-MH FM140-MH8F0M150-MH FâM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum ForEwmaridtteVroâlBtaagseeaBt r1e.0aAkdDoCwn Voltage
VF
V (BR)E0BO.50
4.0 0.70 â
Vdc 0.85
0.9
0.92 Volts
Maximum Ave(IraEg=e1R0e0vµerAsdecC, uI rCre=n0t )at @T A=25â
IR
Rated DC BloCckoilnlegcVtoorltCaguetoff Current @T A=125â
0.5
I CES
â
0.1 10 µAdc
mAmp
NOTES:
( V CE = 60Vdc, I B = 0)
1- Measured atE1mMitHteZr aCndutaopfpf lCieudrrreevnetrse voltage of 4.0 VDC.
2-
Thermal
Res(isVtaCnBce=
F6r0oVmdJcu,ncI tEio=n
0)
to
Ambient
MMBTA05
( V CB = 80Vdc, I E = 0)
MMBTA06
I CBO
µAdc
â
0.1
â
0.1
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
201220-1112-06
WILWLAILSLEALSEECLTERCOTRNOICNICCOCROPR.P.
|
▷ |