MMBT5551DW1T1 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

WILLAS
MMBT5551D^FW^M1_T¹T_H²1_R⁰_U^-M+
DUA_1.L_0AN_SP_UN_RS_FAM_CA_EL_ML _OS_UIG_NN_TA_SL_CHS_OU_TR_TF_KA_YC_BE_AM_RRO_IEU_RNT_RET_CR_TA_IFN_IES_RIS_ST_-O₂₀R_{V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FE^•A^LT^oU^wR^pE^{rofile surface mounted application in order to}
optimize board space.
ƽ _•W_Le_owde_pc_ola_wr_ee_rth_loa_st_st_,h_he_igm_ha_ete_ffr_ii_ca_il_eo_nf_cp_yr_.oduct compliance with RoHS requirements.
•^PH^bi^-g^Fh^rc^eu^err^pe^an^ct ^kc^aap^ga^ebⁱi^slity^a,^vl^aow^ilaf^bor^lw^e ard voltage drop.
SOD-123H
6
0.146(3.7)
0.130(3.3)
5
4
0.012(0.3) Typ.
•_RH_oi_Hgh_Ss_pu_rog_de_uc_ca_tp_fa_ob_ril_pit_ay_c. _{king code suffix ”G”}
•_HG_au_loa_grd_er_nin_fg_refo_er_po_rv_oe_dr_uvo_ctlta_fog_re_pp_ar_co_kte_inc_gtio_cn_o._{de suffix “H”}
• Ultra high-speed switching.
DE^•V^SIⁱC^licE^oM^{n e}A^pR^itK^axIN^iaG^{l p}A^laNⁿD^ar O^chR^ipD^,E^mR^eI^tN^aG^{l si}I^lN^icF^oOⁿ R^juM^ncA^tiT^oIⁿO^. N
• Lead-free parts meet environmental standards of
MILD-SeTviDce-19500 /228 Marking
Shipping
1
2
3
0.071(1.8)
0.056(1.4)
SOT-363/SC-88
• _MRHoa_MHlo_BSg_Tep5nr5of_5rde1ue_Dc_Wtpfro_1orTdpu1acct kfoinrgpaco_{Gckd1iengsucfofidxe"Gsu"3ff0ix0"0H/T"ape&Reel}
MA^MX^eIM^cU^hM^aRⁿAⁱT^cIN^aG^l S^data
• Epoxy_R:_aU_tiL_n9_g4-V0 rated flame r_Se_yt_mar_bd_oa_lnt
Value
Unit
• _CC_oa_lls_ee_ct:_oM_r–o_El_mde_ittd_erp_Vla_os_ltt_aic_g,_eSOD-12_V3H_CEO
140
,^Vdc
• Terminals :Plated terminals, solderable per MIL-STD-750
Collector–Base Voltage
V CBO
160
Vdc
Method 2026
0.031(0.8) Typ.
C₂
B₁
0
0
..00^E2440¹((
1.0)
0.6)
0.031(0.8) Typ.
• ^EP^mol^ita^teri^rt^–y^B:^aI^sn^ed^Vic^oa^ltt^ae^gd^eby cathode ^Vba^En^BOd
6.0
Vdc
Dimensions in inches a_End₂ (milli_Bm₂eters)_C1
• _CM_oo_llu_ecn_tt_oin_r g_CuP_ro_res_nit_ti_—on_C: _oA_nn_tiy_{nuous I C}
600
mAdc
TH^• E^WR^eM^igA^hL^{t :}C^AH^ppA^rR^oxA^imC^aT^tE^eR^d I⁰S^.T⁰¹IC¹S^gram
Charac_Mte_Aris_Xti_Ic_{MUM RATINGS AND ELECTR}S_Iy_Cm_Abo_Ll _CHARAM_Ca_Tx _ERISTIU_Cn_Sit
Ratings a^Tt^o2^ta5^l℃^Dea^vm^icebi^Den^ist^stⁱe^pm^atp^ioeⁿra^Ft^Rur^–e⁵un^Bl^oe^as^rs^do^{, (}th¹e⁾ rwise specifie_Pd_D.
Single ph^Ta^Ase^{= 2}h⁵a^°lf^Cwave, 60Hz, resistive of inductive load.
225
mW
For capac^Dit^eiv^rae^telo^aa^bd^o, ^vd^eer²a⁵te^°Ccurrent by 20%
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device D^Ri^Ass^Ti^Ip^Na^Gtio^Sn
Marking Co_Ad_lue_{mina Substrate, (2) TA = 25°C}
Maximum _DRe_ec_rau_tr_ere_an_bt _oP_ve_eak₂₅R_°e_Cverse Voltage
Maximum _TR_hM_eS_rmV_ao_llt_Rag_ee_{sistance, Junction to Ambient}
RθJA
556
°C/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
P₁D₂
13 ³⁰⁰ 14
m₁W₅
16
18
10
115 120
VRRM
VRMS
20
R¹Î¸J⁴A
30 _2.4 40 _mW50_/°C
60
21 ₄₁₇ 28 _°C3_/5_W
42
80
100
150
200 Vo
56
70
105
140 ^Vo
Maximum _JD_uC_ncB_tl_io_oc_nk_ain_ng_dV_So_tl_ota_rg_ae_{ge Temperature}
VDC _{TJ ,}2_T0_stg
3_–0_{55 to +1}4₅0₀
°⁵C⁰
60
80
100
150
200 ^Vo
Maxim_Eu_Lm_EA_Cve_Tr_Rag_Ie_CF_Ao_Lrw_Car_Hd_AR_Rec_Ati_Cfie_Td_EC_Rur_Ir_Se_Tnt_{ICS (TA = 25°}IO_{C unless otherwise noted.)}
1.0
Am
Peak Forward Surge Curre_Cn_ht _a8._r3_am_cts_es_riin_sg_tile_c half sine-wave _IFSM
Symbol
Min
Max ³⁰ Unit
Am
superimposed on rated load (JEDEC method)
Typica^Ol T^Fh^Fer^Cm^Hal^AR^Res^Ais^Cta^Tnc^Ee^R(^IN^So^Tte^IC2)^S
RΘJA
40
℃
Typical Ju_Cnc_ot_li_lo_en_ctC_oa_r–p_Eac_mit_ia_ttn_ec_re_B(_rN_eo_at_ke_d1_o)_{wn Voltage(3)}
CJ
120
P
Operating₍T_I e_Cm₌p₁e_.0ra_mtur_Ae_dR_c,a_Ing_B e_{= 0)}
TJ
-55 to +125
(BR)CEO
160
—
Vdc ^{-55 to +150}
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
Collector–Base Breakdown Voltage
(I C = 100 ^CµA^Hd^Ac^R,^AI ^CE ^T=^E0^R) ^ISTICS
Maximum Forward Voltage at 1.0A DC
V
SYMBOL FM120-MH F₍M_BR1₎3_CB0_O-MH FM140₁-M₈H₀ FM150-MH_—FM160-MH _VFM_dc180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vo
Maximum _EA_mve_itr_ta_eg_re_–BR_ae_sv_eer_Bs_re_eC_aku_drr_oe_wnt_na_Vt _ol@_taT_geA=25℃
IR
V
0.5
mA
Rated DC₍B_I l_Eo₌ck₁in₀g_µV_Ao_dlt_ca_,g_Ie_{C = 0)}
@T A=125℃
(BR)EBO
6.0
— ^{10 Vdc}
NOTES: ^{Collector Cutoff Current}
1- Measure⁽d^Vat^C1^B M⁼H¹Z²⁰a^Vnd^dca^,pp^Ili^Eed⁼ r⁰e⁾verse voltage of 4.0 VDC.
I CBO
V
—
50
nAdc
2- Thermal Resistance From Junction to Ambient
( V CB = 120Vdc, I E = 0, T A=100 °C)
—
50
µAdc
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
I EBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
2012-06
2012-0
—
50
nAdc
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.