MMBT5401LT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – High Voltage Transistor

WILLAS
FM120-M+
MMBT5401L_TT_H1_RU
1.0A SU^HRF^igAC^hE M^VOU^oN^lT^tS^aC^gHO^eTT^TKY^rB^aAⁿRR^sIE^isR R^toEC^rTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
bett_Fer_Er_Ae_Tve_Ur_Rse_Eleakage current and thermal resistance.
• Low profile surface mounted application in order to
optim^ƽize^Pb^bo^-Fa^rr^ed^esp^pa^acce^ka. ^{ge is available}
SOD-123H
• Low powReor HloSssp,rohdiguhcteffofricpieanckciyn.g code suffix ”G”
• High cur_Hre_an_lot _gc_ea_npa_frb_ei_elit_py_r,_ol_do_uw_ctfo_forw_{r p}a_ard_ckv_ino_glta_cg_oe_dedr_so_up_ff._{ix “H”}
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• G^Du^Ea^Vrd^ICrin^Eg^Mfo^Ar ^Rov^Ke^Ir^Nv^Golt^Aag^Ne^Dp^Oro^Rte^Dc^Etio^Rn^IN. ^{G INFORMATION}
• Ultra h_Di_eg_vh_i-_cs_epeed switching. _Marking
Shipping
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• LeaMd-MfrBeeT5p4a0r1tsLTm1eet environment2aLl standards of 3000/Tape&Reel
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
H_Mal_Aog_Xe_In_Mfr_Ue_Me p_Rro_Adu_Tc_It_Nfo_Gr _Spacking code suffix "H"
M e c h a n i c a_Rl_atd_ina_g t a
Symbol
• Epo_Cx_oy_ll:_eU_ctL_o9_r–4_E-V_m0_ittr_ea_rt_Ve_od_ltf_al_ga_eme retardant
V _CEO
• CasCeo:llMecotoldr–eBdapsleasVtoiclt,aSgeOD-123H
V _CBO
• Term^Eminⁱa^ttl^es^r–:P^Bl^aa^st^eed^Vote^ltarm^geinals, solderable per MIL-ST^VD^E-^B7^O50,
Collecto_Mr C_eu_thrr_oe_dnt₂—₀₂C₆ontinuous
I_C
Value
– 150
– 160
– 5.0
– 500
Unit
Vdc
Vdc
0.031(0.8) Typ.
Vdc
mAdc
SOT– 23
1
BASE
0.040(1.0)
0.024(0.6)
3
COLLECTOR
0.031(0.8) Typ.
• P_To_Hla_Er_Rity_M: _AIn_Ldic_Ca_Hte_Ad _Rby_Ac_Cat_Th_Eod_Re_ISba_Tn_ICd _S
Dimensions in inches and (millimeters)
• Mounting PosiCtiohnar: aAcntyeristic
Symbol
Max
Unit
• We^Tig^oh^tat^l:^DA^ep^vp^icr^eox^Dim^issaⁱt^pe^ad^tio0ⁿ.0^F1^R1^-g⁵ra^Bm^{oard (1)}
P_D
225
mW
T _A =25 °C
DeMraAteXaIbMovUeM25°RCATINGS AND ELECTRICAL CHARA1.C8TERISmTWIC/°CS
2
EMITTER
Ratings at 25T℃herammabl iReenst itsetmanpceer,aJtuurnecutinolnestos Aotmhbeirewnist e specifieRd._θJA
556
°C/W
Single phase_Toh_ta_al_lf _Dw_ea_vv_ie_c,_e6_D0_iH_ssz_i,_pr_ae_ts_iois_ntive of inductive load.
P_D
For capacitive_Alo_lua_md_i,_nd_ae_Sra_ut_be_sc_tru_ar_tr_ee_,n₍t₂b₎y_T2_A0₌%_25°C
300
mW
Derate a_Rb_Ao_Tv_Ie_N2_G5_S°C
SYMBOL FM120-MH FM130-M²H^.4FM140-MH^mF^WM^/1^°5^C0-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code^{Thermal Resistance, Junction to Ambient}
R_12θJA
13 ⁴¹⁷ 14 ^°C/W15
16
18
10
115 120
Maximum Rec^Ju^urrⁿe^cn^tt^ioPⁿea^ak^ndRe^Sv^te^or^rs^ae^geVo^Tl^eta^mge^perature
VRRM ^{T J}2^,0^Tstg 30^{–55to+150}40
°C₅₀
60
80
100
150
200 Volts
Maximum RMS Voltage
Maximum D^DC^EB^Vlo^ICck^Eing^MVo^Alt^Rag^Ke ^ING
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
56
70
105
140 ^Volts
80
100
150
200 ^Volts
Maximum AvMeMraBgeT5F4o0rw1aLrTd1R=e2cLtified Current
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimpos^Eed^Lo^En^Cra^Tte^Rd ^Ilo^Ca^Ad (^LJE^CDE^HC^Am^Re^Atho^Cd^T) ^ERISTICS
I₍F_TSM_{A =}
25°C
unless
otherwise
noted)
30
Amps
Typical Thermal Resistance (Note 2) ^{Characteristi}R^c ΘJA
Typical Jun^Oct^Fio^Fn C^Cap^Ha^Acit^Ran^Ace^C(^TN^Eote^R1^IS) ^TICS
CJ
Symbol
Min ₄₀ Ma x
120
Unit
℃/W
PF
Operating Temper^Cat^ou^lr^lee^cR^toa^rn^–g^Ee^{mitter Breakdown Voltage} TJ
-55 to +125 V _(BR)CEO
-55 toV+d1c50
℃
Storage Temperat(uIrCe=R–a1n.g0emAdc, I B = 0)
TSTG
– 15-065 to +175—
℃
Collector–Base Breakdown Voltage
V _(BR)CBO
Vdc
(I _CC=HA–R10A0CµTAERdcIS, TI I_EC=S0)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH– F1M61060-MH FM1—80-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum ForwardEVmoiltttaegre-BaAt s1e.0BArDeCakdown Voltage VF
0.50 V_(BR)EBO 0.70
0.85 Vdc
0.9
0.92 Volts
Maximum Averag(IeER=e–v1e0rsµeACducr,IreCn=t0a)t @T A=25℃
IR
Rated DC Blocking^CV^olo^lelt^ca^tg^oe^{r Cutoff Curre}@ⁿT^t A=125℃
-5.0 0.5 —
I _CES
10
mAmp
(V _CB = –120 Vdc, I_E= 0)
NOTES:
1-
Measured
at
1
(V
MHZ
C_aB_n⁼_d
–_ap1_p2_li0_edV_rd_ec_v,_erI_sE=_e
v⁰o^,lt^Tag^Ae⁼o¹f⁰4⁰.0^°CVD⁾ C.
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2- Thermal Resistance From Junction to Ambient
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
—
– 50 nAdc
—
– 50 µAdc
201²2⁰-1¹1^2-06
WILL^WA^ILS^LE^AL^SE^EC^LT^ER^CO^TRN^OIC^NIC^CO^CR^OP^R. ^P.