MMBT4403WT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Switching Transistor PNP Silicon

WILLAS
FM120-M
MMBT4403WT1THRU
1.0^GA S^eUⁿRF^eAC^rE^aM^l O^PU^uNT^rpSC^oHO^sT^eTK^TY^rB^aARⁿR^sIEⁱR^sR^tE^oC^rT^sIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
PN^•P^BS^ati^cl^hic^po^ron^{cess design, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
• ^{We doepctilmariezethbaot athrde smpaatceeri.al of product compliance with RoHS requirements.}
•
Pb^•-^LF^or^wee^pop^wa^ec^rk^la^osg^se^{, h}is^iga^hv^ea^ffiⁱl^ca^iebⁿl^ce^y.
• High current capability, low forward
voltage
drop.
Ro_•H_HS_igp_hr_so_ud_rgu_ect_cafo_pr_ap_ba_ilic_tyk_.ing code suffix ”G”
Ha•loGgueanrdfrrienge fporroodvuercvtoflotargpeapcrkoitnegctcioond.e suffix “H”
SOD-123H
0.146(3.7)
0.130(3.3)
3
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
1
ORDER_•IN_R^MG_o^I_H^LI^-_SN^S_pF^T_rO^D_od^-R¹_uM_c⁹_t⁵A_f⁰_oT⁰_rI_pO^/2_aN_c²_k⁸_{ing code suffix "G"}
Devic^He^{alogen free p}M^roa^dr^uk^cin^t g^{for packing co}S^dh^eip^sp^ui^fn^fig^{x "H"}
2
SOT-323
Mechanical data
MMBT4403WT1
2T
3000/Tape & Reel
• Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
MAXIM^•U^TM^erR^mAⁱⁿT^aIN^lsG^:PS^{lated terminals, solderable per MIL-STD-750}
0.031(0.8) Typ.
Rating ^{Method 2026}
Symbol
Value Unit
0.031(0.8) Typ.
3
COLLECTOR
Colle•ctPoro–lEamritityte:rIVnodlitcaagteed by cathode band
Colle_•ct_Mor_o–B_unas_tie_ngVo_Plt_oa_sg_ie_{tion : Any}
V CEO
V CBO
– 40 Vdc
– 40
Vdc
Dimensions in₁inches and (millimeters)
BASE
Emitt_•er_W–B_ea_igse_htV_:o_Alt_pag_pe_{roximated 0.011 gram}
Collector Current — Continuous
V EBO
IC
– 5.0 Vdc
– 600 mAdc
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2
EMITTER
T^RH^aE^tinR^gM^s A^atL²C^5℃HA^aR^mA^bC^ieT^ntE^tR^emIS^pT^eI^rC^atS^{ure unless otherwise specified.}
Single phase h_Cal_hf _aw_ra_av_ce_t,_e6_ri0_sH_tiz_c, resistive of ind_Su_yc_mtiv_be_ol_load. _Max
Unit
For capacitive load, derate current by 20%
Total Device Dissipation FR−5 Board
P_D
150
mW
T_A = 25°C
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Mark_Tin_hg_erC_mo_ad_le_Resistance,
Maximu_Jm_unR_cte_iocu_nr_−re_ton_−t _AP_mea_bk_ieR_ne_tverse Voltage
R_{qJA VRRM} 833¹²²⁰
°C¹³³⁰/W
14
40
15
50
16
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
Junction and Storage Temperature
Maximum DC Blocking Voltage
VRMS
14
21
28
35
42
T_J,
T_stg
−
VDC
55
to
+150
20
°C
30
40
50
60
56
70
105
140
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
D_PE_eaV_kI_FC_oE_rwM_ardA_SR_uK_rgI_eN_CG_{urrent 8.3 ms single half sine-wave IFSM}
30
supMerMimBpTos4e4d0o3nWraTt1ed=lo2aTd (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
ETLypEicCaTl JRuInCctAioLn CCaHpaAcRitaAnCceT(ENRotIeS1T)ICS (T A = 25°C unlCesJs otherwise noted)
Operating Temperature Ran_Cg_he_aracteristic
TJ
-_S55_ymto_b+_o1_l 25
Min
O^StF^oF^ragC^eH^TA^emR^pA^eC^raT^tuE^reR^RIS^anT^gIC^e S
TSTG
40
120
Max
Unit
- 65 to +175
-55 to +150
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAd^Cc^H,^AI ^RB ^A=^C0^T) ^ERISTICS
Maxim_Cu_om_lleF_co_torw_r–a_Brd_aV_seol_Bta_rg_ee_aka_dt _o1._w0_nA _VD_oC_ltage
Maxim_(Iu_Cm₌A_–v₀e_.r₁a_mge_AdR_ce_,v_Ie_Ers₌e₀C₎urrent at @T A=25℃
Rated_ED_mC_ittB_el_ro_–c_Bki_an_sg_eV_Bo_rl_eta_ag_ke_{down Voltage}@T A=125℃
V (BR)CEO
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH_– F₄M₀150-MH FM_—160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
V
0.50
(BR)CBO
0.70
Vdc ^0.85
0.9
0.92
IR
– 40
— ^0.5
V (BR)EBO
10 _Vdc
NOTES^(I: ^{E = –0.1mAdc, I C = 0)}
1- Mea^Bs^aur^se^ed ^Cat^u1^toM^ffH^CZ^ua^rrn^edⁿa^tpplied reverse voltage of 4.0 VDC.
– 5.0
—
I BEV
µAdc
2- The⁽rm^Va^Cl^ER⁼es^–i³st⁵an^Vc^de^cF^,r^Vom^EBJ⁼un^–c⁰tio^.4n ^Vto^dA^cm⁾ bient
Collector Cutoff Current
—
– 0.1
I CEX
µAdc
(V CE = –35 Vdc, V EB = –0.4 Vdc)
—
– 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.