MMBT4403LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – Switching Transistor

WILLAS
FM120-M+
MMBT4403LTTH1RU
1.0A^GSU^eRⁿFA^eC^rE^aM^lO^PUN^uT^rS^pCH^oO^sTT^eKY^TB^rA^aRⁿRI^sER^isRE^tC^oT^rIF^sIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• B_Pat_Nch_Ppr_Soc_ie_lis_cs_ode_nsign, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
o•ptRimoHizSe bporoadrudcstpfoarcep.acking code suffix "G"
• LowHaploowgeenr lforeses,phriogdhuecftffiocirepnaccyk. ing code suffix "H"
• High current capability, low forward voltage drop.
●
• High surge capability.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
O^•R^GD^uE^aR^rdIN^rinG^gI^fN^oF^{r o}O^vR^eM^rvA^olT^taIO^geN^protection.
• Ultra high-speed switching.
• Sil_Dic_eo_vn_ice_epitaxial plan_Ma_ar_rc_kh_inip_g, metal silicon_Shju_ipn_pc_it_nio_gn.
• Lead-free parts meet environmental standards of
M_MM_ILB_-ST4_T4_D0_-3₁L₉T₅1_{00 /228} 2T
3000/Tape & Reel
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
SOT– 23
M^MA^eXI^cM^hU^aMⁿRⁱA^cT^aIN^lG^dS^ata
• Epoxy : UL9R4a-tVin0grated flame retardant
Symbol
Value Unit
0.040(1.0)
0.024(0.6)
• C^Ca^os^lle^ec:^toM^r–o^Eld^meⁱd^ttep^rla^Vs^ot^lti^ac^g, ^eSOD-123H
V CEO
•
Collector–Base Voltage
Terminals :Plated terminals,
solderable
per
M
I
L
V_-SC_TB_DO
-
7
5
,
0
Emitter–Base Voltage
Method 2026
V EBO
Collector Current — Continuous
IC
• Polarity : Indicated by cathode band
– 40
– 40
– 5.0
– 600
Vdc
0.031(0.8) Typ.
Vdc
Vdc
0.031(0.8) Typ.
3
COLLECTOR
mAdc
Dimensions in inches a₁nd (millimeters)
T^•H^ME^oR^uM^ntAⁱⁿL^g C^PH^osA^itR^ioAⁿC^: T^AE^nyRISTICS
• Weight : Ap_Cp_hro_ax_raim_cta_et_re_isd_ti0_c.011 gram
Symbol
Max
Unit
BASE
2
Total D_Mev_Aic_Xe _ID_Mis_Usip_Mati_Ron_AF_TR_IN–5_GB_Soa_Ard_N(1_D) _ELECTRP_ICD _{AL CHAR}2_A25_CTERISTm_ICW_S
EMITTER
T A =25 °C
Ratings at _D25_e℃_ratea_am_bb_oi_ve_ent₂t₅e_°m_Cperature unless otherwise specified.
1.8
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
For capac^Tit^hiv^ee^rmlo^aa^ld^R, ^ed^se^isra^tate^ncc^eur^Jr^ueⁿn^ct^tb^ioyⁿ2^to0%^Ambient
R θJA
556
°C/W
Total Device Dissipation
PD
300
mW
Alumina Sub^Rst^Ara^Tt^Ie^N(^G2^S) T A = 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Co_Dd_ee_{rate above 25°C}
12
13 _2.4 14 _mW1_/5_°C
16
18
10
115 120
Maximum R_Te_hc_eu_rr_mre_an_lt_RP_ee_sa_isk_tR_ane_cv_ee_,rs_Je_unV_co_tl_it_oa_nge_{to Ambient}
VRRM
R
20
θJA
30 ₄₁₇ 40 _°C5_/W0
60
80
100
150
200 Volts
Maximum R_JM_unS_ctV_ioo_nlta_ag_ne_{d Storage Temperature}
VRMS _{T J , T}14_stg
–²5¹5 to +150²⁸
°³C⁵
42
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximu_Dm_EA_Vve_ICra_Ege_MF_Aor_Rw_Kar_Id_NR_Gectified Current
IO
1.0
Amps
Peak Forwa^Mrd^MSu^Br^Tge⁴⁴C⁰u³rr^Le^Tn¹t 8⁼.3²m^Ts single half sine-wave _IFSM
superimposed on rated load (JEDEC method)
Typical ^ETh^Le^Erm^Ca^Tl ^RRe^ICsi^Ast^Lan^Cce^H(^ANo^Rte^A2^C) ^{TERISTICS (T A =}R²Î˜⁵J^°A^{C unless otherwise noted)}
Typical Junction Capacitance (Note^C1^h) ^aracteristic
CJ
Symbol
Operatin^Og^FT^Fem^Cp^He^Ara^Rtu^Are^CR^Ta^Eng^Re^ISTICS
TJ
-55 to +125
30
40
Min ₁₂₀Max
Unit
-55 to +150
Amps
℃/W
PF
℃
Storage TempCeorallteucretoRr–aEnmgeitter Breakdown Voltage (3)TSTG
V (BR)CEO
- 65 to +175 Vdc
℃
(I C = –1.0 mAdc, I B = 0)
– 40
—
Collec^Cto^Hr–^AB^Ra^As^Ce^TB^Er^Re^Ia^Sk^Td^Io^Cw^Sn Voltage
Maximum Forw_(Ia_Cr₌d V_–0o_.lt₁a_mge_Aa_dt_c1_, ._I0_EA₌D₀C₎
SYMBOL FM120-MH FM130-MVH F_(BM_R)1_C4_B0_O-MH FM150-MH FM160-MH FM180-MHVFdMc1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
–⁰4^.70⁰
— ^0.85
0.9
0.92 Volts
Maximum AveEramgietteRre–vBearse CBurerraekndtoawt n@VoTlAta=g2e5℃
IR
Rated DC Blo(cIkEin=g–V0o.l1tamgAedc, I C = 0) @T A=125℃
V (BR)EBO
0.5
Vdc
– 5.0 10 —
mAmp
Base Cutoff Current
NOTES:
(V CE = –35 Vdc, V EB = –0.4 Vdc)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector Cutoff Current
2- Thermal Res₍i_Vsta_Cn_Ec₌e _–F₃ro₅m_VJ_du_cn_,ct_Vion_EBto₌ A_–m_0.b₄ie_Vnt_dc)
I BEV
µAdc
—
– 0.1
I CEX
µAdc
—
– 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
201²2⁰-1¹1^2-06
WIL^WLA^ILS^LE^AL^SE^EC^LT^ER^CO^TRN^OIC^NIC^CO^CR^OP^R.^P.