MMBT4401LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – Switching Transistor

WILLAS
FM120-M+
MMBT4401LTTH1RU
1.0A^GSU^eRFⁿA^eCE^rM^aO^lU^PNT^uSC^rH^pO^oTT^sKY^eBA^TR^rR^aIEⁿR ^sREⁱC^sT^tIF^oIE^rRS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
••BWatechdepcrolacreestshadtetshiegnm, aetxecreiallleonftpproowduecrtdcisosmippalitaionnceowffeitrhsRoHS requirements.
b_Pe_btte_-Fr _rre_ev_ee_prs_ae_cl_ke_aak_ga_ege_isc_aur_vr_ae_in_lt_aa_bn_led thermal resistance.
SOD-123H
• L_Row_oHpr_Sof_pil_re_os_du_ur_cfa_tc_fe_orm_po_au_cn_kte_ind_gap_copl_dic_eat_sio_un_ffii_xn _”o_Grd_”er to
optimize board space.
• LHowalpoogweenrflroeses,phriogdhuecffticfoiernpcay.cking code suffix “H”
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•_OH_Rig_Dh_Es_Ru_Ir_Ng_Ge c_Ia_Np_Fa_Obi_Rlit_My._ATION
• Guardring for overvoltage protection.
• UltrDaehviigche-speed switMchairnkgin. g
Shipping
• Silicon epitaxial planar chip, metal silicon junction.
•
MMBT4401LT1
Lead-free parts meet
2X
3000/Tape &
environmental standards
Reel
of
0.071(1.8)
0.056(1.4)
•^MR^MAo^IH^LX-S^ISMp^TUr^Do^Md^-1uc^R9t^5Af⁰o^T0r^Ip^N/2a^Gc²k^8Sing code suffix "G"
Halogen f_Rre_ae_tinpr_goduct for packing co_Sd_ye_ms_bu_off_lix "H" _Value
Unit
Mechanical data
Collector–Emitter Voltage
V CEO
40
Vdc
• Epoxy : UL94-V0 rated flame retardant
•
Collector–Base Voltage
V
Case : Molded plastic, SOD-123H
CBO
60
Vdc
• Te^Erm^miⁱn^tta^erls^–B:P^asla^ete^Vd^oltt^ae^grm^e inals, solde^Vra^EBb^Ole per MIL-⁶S^.T⁰D-750, ^Vdc
Collector CMuerrtehnotd—20C2o6ntinuous I C
600
mAdc
0.031(0.8) Typ.
SOT–23
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
3
COLLECTOR
• Polarity : Indicated by cathode band
•_TM_Ho_Eu_Rn_Mtin_Ag_LP_Co_Hsi_Atio_Rn_A:_CA_Tn_Ey _RISTICS
Dimensions in inches₁and (millimeters)
BASE
• Weight : Ap_Cp_hro_ax_raim_cta_et_re_isd_ti0_c.011 gram
Symbol
Max
Unit
Tota_Ml D_Aev_Xic_Ie_MD_Uis_Msip_Rati_Aon_TF_INR_G– 5_SB_Aoa_Nrd_D, (1_E)_LECTRICAP_LD _CHARACT22_E5_RISTICSmW
Ratings
at
2^T5^A℃⁼
25°C
ambient
temperature
unless
otherwise
specified.
Derate above 25°C
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance, Junction to Ambient
For capacitive load, derate current by 20%
RθJA
Total Device Dissipation
PD
1.8
mW/°C
556
°C/W
300
mW
2
EMITTER
Alumina S^Rub^As^Ttr^INat^Ge,^S(2) TA = 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code_{Derate above 25°C}
12
13 _2.1₄4
1_m5_W/°C 16
18
10
115 120
Maximum Rec_Tu_hr_ere_rmnt_aP_l e_Ra_ek_sR_ise_tav_ne_crs_ee_{, J}V_uo_nlt_ca_tg_ioe_{n to Ambient} VRRM
20_RθJA 30
41⁴7⁰
5_°0_C/W 60
80
100
150
200 Volts
Maximum RMJSunVcotlitoangeand Storage Temperature
VRMS
T¹J⁴, Tstg ²¹ –55 to²+⁸150 ³⁵°C ⁴²
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum_DA_Ev_Ver_Ia_Cg_Ee F_Mo_Arw_Rar_Kd_IR_Ne_Gctified Current
IO
1.0
Amps
Peak Forward_MSu_Mrg_Be_TC₄u₄r₀re₁n_Lt_T8₁.3 m₌ s₂s_Xingle half sine-wave _IFSM
superimposed on rated load (JEDEC method)
Typical T^Ehe^Lrm^Ea^Cl^TR^Res^ICist^Aan^Lce^C(^HN^Aot^Re ^A2)^{CTERISTICS (TA =}RΘ²J⁵A^{°C unless otherwise noted.)}
Typical Junction Capacitanc_Ce_h(_aN_ro_at_ce_t1_e)_ristic
Operating Temperature Range
Storage T^Oem^FFpe^Cra^Htu^Are^RR^Aa^Cng^Te^ERISTICS
CJ
TJ
TSTG
Symbol
Min
-55 to +125
Collector–Emitter Breakdown Voltage (3)
V (BR)CEO
30
40
M¹a²x⁰
- 65 to +175
Unit
-55 to +150
Vdc
Amps
℃/W
PF
℃
℃
(I C = 1.^C0^Hm^AA^Rd^Ac^C, ^TI ^EB^R=^I0^S)^TICS
Maximum For_Cw_oa_llr_ed_cV_too_rl_–ta_Bg_ae_sa_et _B1._r0_eA_akD_dC_{own Voltage}
Maximum Av(eIra_Cg=e0R.1evmeArsdecC, Iu_Err=en0t)at @T A=25℃
Rated DC BloEcmkinitgteVr–oBltasge Breakdown @VoTltAa=g1e25℃
SYMBOL FM120-MH FM130-MH FM140-M4H0 FM150-MH FM160—-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
V (BR)CBO
0.50
0.70
0_V.8_d5_c
0.9
0.92 Volts
IR
60
V (BR)EBO
—0.5
10
Vdc
mAmps
(I E = 0.1 mAdc, I C = 0)
NOTES:
Base Cutoff Current
I BEV
1- Measured a₍t_V1 _CM_EH₌Z₃a₅nd_Va_dp_cp_, l_Vied_EBre₌ve₀r_.s₄e_Vvo_dl_cta₎ge of 4.0 VDC.
2- Thermal Re_Csis_ot_la_len_cce_toF_r r_Com_utoJu_ffn_Cct_uio_rn_reto_ntAmbient
I CEX
6.0
—
µAdc
—
0.1
µAdc
(V CE = 35 Vdc, V EB = 0.4 Vdc)
—
0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
201²2⁰-¹1²1^-06
WIL^WLA^ILS^LAE^SLE^EC^LET^CR^TO^RN^OIC^NIC^CO^CR^OP^R.^P.