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MMBT3906DW1T1 Datasheet, PDF (1/6 Pages) WILLAS ELECTRONIC CORP – Dual Bias Resistor Transistor
WILLAS
MMBT3906DWFM1TT1H21R0U-M+
D1.0uA SaUlRFBACiEaMsOURNTeSCsHiOsTTtKoY BrATRRrIEaRnREsCTiIsFIEtRoSr-20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
•ThHeigMh cMurBreTn3t 9ca0p6aDbWilit1yT, l1owdfoervwicaerd ivsoaltasgpeind–roopff. of our popular
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SO•TH–ig2h3/sSuOrgTe–c3a2p3abthilirteye. –leaded device. It is designed for general
pu•rpGousaerdarmingplfiofrieorvearpvoplltiacgaetiopnrosteacntidon.is housed in the SOT–363
six•–Uleltardaehdigshu-rsfapceeedmsowuintcthpiancgk. age. By putting two discrete devices in
on•eSpilaiccoknageep,itatxhiiasl pdleavniacrechiisp,imdeeatal l fsoilricolonwju–npcotiwone.r surface mount
ap•plLMiceIaaLtd-iSo-fTnresDew-1ph9ae5rrt0es0mb/o2ea2er8tdesnpvaircoenims eant taalpsrteamndiuamrd.s of
• •hRHFoaEHlo, Sg1e0pn0ro–frde3ue0c0tpfroordpuacct kfoinrgpacockdiengsucfofidxe"Gsu"ffix "H"
• MLoewcVhCaEn(siact)a, ≤l 0d.4aVta
•
•SEimpopxliyfi:eUsLC9i4rc-Vu0it
Design
rated flame
retardant
•
Reduces Board Space
• Case : Molded plastic,
SOD-123H
• Reduces Component Count
,
•
• Terminals :Plated terminals, solderable per MIL-STD-750
Available inM8emthmod, 270–2in6ch/3,000 Unit Tape and Reel
• •DPeovliacreityM:aInrkdiincga:teMd bMy BcaTt3h9od0e6DbaWnd1T1 = A2
•
Weight :0.005g
• Mounting Position
: Any
Featrues
z •RWoHeiSghptr:oAdpucptrofoxrimpaactekdin0g.0c1o1degrsaumffix "G",
65
40.071(1.8)
0.056(1.4)
1
2
3
SOT-363
0.031(0.8) Typ.
(3)
(2)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
(1)
Dimensions in inches and (millimeters)
Q1
Q2
HalogenMfrAeXe IpMroUdMuctRfoArTpIaNckGinSg AcoNdDe sEuLffEixC"HT"R. ICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
(4)
(5)
(6)
Single phase half wave, 60Hz, resistive of inductive load.
ForMcaApXacIMitivUeMloaRdA, dTeINraGteScurrent by 20%
Marking Code
RATINGS
Rating
MaximCuomlleRcetocur–rrEemntitPteerakVoRletavgeerse Voltage
MaximCuomlleRcMtoSr–VBoaltsaegeVoltage
MaximEummitDteCr–BBloacskeinVgoVltoalgtaege
MaximCuomlleAcvteorraCgeurFreonrwt a–rdCRonetcintifuieodusCurrent
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Symbol
Value
Unit
12
13
14
15
16
18
10
115 120
VCEO VRRM –4200
30Vdc 40
50
60ORDER8IN0 G INF1O0R0 MATIO1N50
200 V
VCBO VRMS –4104
21Vdc 28
35
42
56
70
105
140 V
VEBO VDC –5.200
30Vdc 40
50 Dev6ic0e
8M0 arking100 Sh1ip5p0ing 200 V
IC IO –200
mAdc
MMBT3906DW11.0T1
A2
3000 Units/Reel
A
Peak FEolrewcatrrdosStuartgice DCiusrcrehnatr8g.e3 ms single half sine-waEvSe D
superimposed on rated load (JEDEC method)
IFSMHMBMM>>126000000,
V
30
A
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature Range
TJ
-55 to +125
-55 to +150
StoraTgeHTEeRmMpeAraLtuCreHRAanRgAe CTERISTICS
TSTG
- 65 to +175
Characteristic
Symbol
Max
Unit
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
MaximTuomtaFloPrwacakrdagVeolDtaigsesipata1ti.o0nA(1D)C
PD VF
150
mW0.50
0.70
0.85
0.9
0.92 V
MaximumTAAv=er2a5g°eCReverse Current at @T A=25℃
Rated TDhCeBrmloaclkRinegsVisotlatangcee Junction to @T A=125℃RqJA
IR
833
°C/W
0.5
10
m
Ambient
NOTESJ: unction and Storage
1- MeasurTeedmatp1eMraHtuZreanRdaanpgpelied
reverse
voltage
of
T4.J0,
VTsDtgC.
–55 to +150
°C
2- Th1e.rmDael RviecseismtanocuenFterodmonJuFncRti4ongtloasAsmebpieonxty printed circuit board using the minimum
1. recommended footprint.
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.