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MMBT3906DW1T1 Datasheet, PDF (1/6 Pages) WILLAS ELECTRONIC CORP – Dual Bias Resistor Transistor | |||
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WILLAS
MMBT3906DWFM1TT1H21R0U-M+
D1.0uA SaUlRFBACiEaMsOURNTeSCsHiOsTTtKoY BrATRRrIEaRnREsCTiIsFIEtRoSr-20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
⢠Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
⢠Low profile surface mounted application in order to
SOD-123H
optimize board space.
⢠Low power loss, high efficiency.
â¢ThHeigMh cMurBreTn3t 9ca0p6aDbWilit1yT, l1owdfoervwicaerd ivsoaltasgpeindâroopff. of our popular
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOâ¢THâig2h3/sSuOrgTeâc3a2p3abthilirteye. âleaded device. It is designed for general
puâ¢rpGousaerdarmingplfiofrieorvearpvoplltiacgaetiopnrosteacntidon.is housed in the SOTâ363
sixâ¢âUleltardaehdigshu-rsfapceeedmsowuintcthpiancgk. age. By putting two discrete devices in
onâ¢eSpilaiccoknageep,itatxhiiasl pdleavniacrechiisp,imdeeatal l fsoilricolonwjuânpcotiwone.r surface mount
apâ¢plLMiceIaaLtd-iSo-fTnresDew-1ph9ae5rrt0es0mb/o2ea2er8tdesnpvaircoenims eant taalpsrteamndiuamrd.s of
⢠â¢hRHFoaEHlo, Sg1e0pn0roâfrde3ue0c0tpfroordpuacct kfoinrgpacockdiengsucfofidxe"Gsu"ffix "H"
⢠MLoewcVhCaEn(siact)a, â¤l 0d.4aVta
â¢
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Design
rated flame
retardant
â¢
Reduces Board Space
⢠Case : Molded plastic,
SOD-123H
⢠Reduces Component Count
,
â¢
⢠Terminals :Plated terminals, solderable per MIL-STD-750
Available inM8emthmod, 270â2in6ch/3,000 Unit Tape and Reel
⢠â¢DPeovliacreityM:aInrkdiincga:teMd bMy BcaTt3h9od0e6DbaWnd1T1 = A2
â¢
Weight :0.005g
⢠Mounting Position
: Any
Featrues
z â¢RWoHeiSghptr:oAdpucptrofoxrimpaactekdin0g.0c1o1degrsaumffix "G",
65
40.071(1.8)
0.056(1.4)
1
2
3
SOT-363
0.031(0.8) Typ.
(3)
(2)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
(1)
Dimensions in inches and (millimeters)
Q1
Q2
HalogenMfrAeXe IpMroUdMuctRfoArTpIaNckGinSg AcoNdDe sEuLffEixC"HT"R. ICAL CHARACTERISTICS
Ratings at 25â ambient temperature unless otherwise specified.
(4)
(5)
(6)
Single phase half wave, 60Hz, resistive of inductive load.
ForMcaApXacIMitivUeMloaRdA, dTeINraGteScurrent by 20%
Marking Code
RATINGS
Rating
MaximCuomlleRcetocurârrEemntitPteerakVoRletavgeerse Voltage
MaximCuomlleRcMtoSrâVBoaltsaegeVoltage
MaximEummitDteCrâBBloacskeinVgoVltoalgtaege
MaximCuomlleAcvteorraCgeurFreonrwt aârdCRonetcintifuieodusCurrent
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Symbol
Value
Unit
12
13
14
15
16
18
10
115 120
VCEO VRRM â4200
30Vdc 40
50
60ORDER8IN0 G INF1O0R0 MATIO1N50
200 V
VCBO VRMS â4104
21Vdc 28
35
42
56
70
105
140 V
VEBO VDC â5.200
30Vdc 40
50 Dev6ic0e
8M0 arking100 Sh1ip5p0ing 200 V
IC IO â200
mAdc
MMBT3906DW11.0T1
A2
3000 Units/Reel
A
Peak FEolrewcatrrdosStuartgice DCiusrcrehnatr8g.e3 ms single half sine-waEvSe D
superimposed on rated load (JEDEC method)
IFSMHMBMM>>126000000,
V
30
A
Typical Thermal Resistance (Note 2)
RÎJA
40
â
Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature Range
TJ
-55 to +125
-55 to +150
StoraTgeHTEeRmMpeAraLtuCreHRAanRgAe CTERISTICS
TSTG
- 65 to +175
Characteristic
Symbol
Max
Unit
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
MaximTuomtaFloPrwacakrdagVeolDtaigsesipata1ti.o0nA(1D)C
PD VF
150
mW0.50
0.70
0.85
0.9
0.92 V
MaximumTAAv=er2a5g°eCReverse Current at @T A=25â
Rated TDhCeBrmloaclkRinegsVisotlatangcee Junction to @T A=125âRqJA
IR
833
°C/W
0.5
10
m
Ambient
NOTESJ: unction and Storage
1- MeasurTeedmatp1eMraHtuZreanRdaanpgpelied
reverse
voltage
of
T4.J0,
VTsDtgC.
â55 to +150
°C
2- Th1e.rmDael RviecseismtanocuenFterodmonJuFncRti4ongtloasAsmebpieonxty printed circuit board using the minimum
1. recommended footprint.
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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