MMBT3904WT1 Datasheet, PDF (1/11 Pages) Motorola, Inc – General Purpose Transistor

NPN
WILLAS
MMBT3904W_FMT_120-M+
PNP ^THRU
1.0A_GSU_eR_nFA_eC_rE_aM_lO_PUN_uT _rS_pCH_oO_sTT_eKY_TB_rA_aR_nRIE_sR_isRE_tC_oT_rIF_sIERS -20V- 20_M0V_MBT3906F_WM_T1₁200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
•_NBb_PeattNtcehraprer_novce_derss_PesNldeeaPskiag_Sgnei,_lec_ix_cucroerel_nlnetnat _{npdowtheerrdmisasl} irpeastiisotnanocffee.rs
• Low profile surface mounted application in order to
SOD-123H
o_Tp_ht_ei_sm_eiz_tre_anb_so_isa_tord_rss_ap_reac_de_e._{signed for general purpose amplifier applications. They are housed}
• Low power loss, high efficiency.
•ⁱⁿH^thig^eh^Sc^Ou^Trr^–e³n²t³c^/Sa^Cp^–a⁷b⁰ili^wty^h,^iclo^hw^isf^do^erw^sia^gnrd^edvo^folt^ra^log^we
power
drop.
surface
mount
applications.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
•
ƽWe declare that the material of product
Guardring for overvoltage protection.
compliance
with
RoHS
requirements.
• Ult^Pra^bh^-i^Fg^rh^e-s^ep^pee^ad^cksw^agitc^ehⁱin^sg^a. ^vailable
• SiliRcoonHeSpiptarxoidaul pcltafnoarrpcahcipk,imngetcaol sdielicsounffjuixnc”Gtio”n.
SOT– 3230.071(1.8)
0.056(1.4)
• Lea_Hd_a-f_lr_oe_ge_ep_nar_frts_eeme_pe_rot e_dn_uv_ci_tro_fonm_{r p}e_an_cta_kl_is_nt_gan_cd_oa_dr_eds_so_uf_{ffix “H”}
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
M^DEe^Vc^ICh^Ea^Mn^Ai^Rc^Ka^Il^Nd^Ga^At^Na^{D ORDERING INFORMATION}
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
• EpoxDye:vUicLe94-V0 rated flamMearrektianrgdant
Package
Shipping
0.040(1.0)
0.024(0.6)
• CaMseM:BMT3o9ld0e4dWpTl1astic, SOD-123AHM
SOT-323/SC-70
,
• Ter_Mm_Min_Ba_Tl₃s₉:₀P₆la_Wte_Td₁ terminals, sol₂d_Aerable per M_SOIL_T-_-S₃T₂₃D_/-_S7_C5_-0₇₀
Method 2026
3000/Tape&Reel
0.031(0.8) Typ.
3000/Tape&Reel
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
•_MW_Ae_Xi_Ig_Mh_Ut :_MAp_Rp_Aro_Tx_INim_Ga_Sted 0.011 gram
MAXIMUM^RaR^tinA^gTINGS AND ELECT^SR^yI^mC^bA^oL^l CHA^VR^aA^luC^e TER^UnIS^itTICS
Collector–Emitter Voltage MMBT3904WT1 VCEO
40
Vdc
Ratings at 25℃ ambient temperature u_Mnle_Ms_Bs_To₃t₉h₀e₆rw_Wis_Te₁specified.
– 40
Single pha_Cse_olh_lea_cl_tf_ow_r–a_Bve_as, _e60_VH_oz_lt,_ar_ge_esistive _Mof_Min_Bd_Tu₃c₉ti₀v₄e_Wlo_Ta₁d. _{V CBO}
60
Vdc
For capacitive load, derate current by 20_M%_MBT3906WT1
– 40
1
BASE
3
COLLECTOR
Emitter–BasReAVToINltaGgSe
MMBT3904WSYTM1BOL
FMV12_E0_B-_OMH
FM1306-M.0H FM140V-MdcH FM150-MH
FM160-MH
FM180-MH
2
FM1100-_EM_MH_ITTF_EM_R 1150-MH FM1200-MH
UNIT
Marking Code
MMBT3906WT1
12
–135.0 14
15
16
Maximum RCecoullerrcetonrtCPuerraekntR—evCeornsteinVuooultsageMMBT3904WVTR1RM I C20
30200 4m0 Adc 50
60
1880_{MMBT113009004WT1115105}
120
200 Volts
Maximum RMS Voltage
Maximum DC Blocking Voltage
MMBT3906WVTR1MS
14
–21200 28
35
42
VDC
20
30
40
50
60
56
70
105
140 ^Volts
3
80
100 ^COLLEC1^T5^O0^R
200 ^Volts
Maximum Average Forward Rectified Current
IO
1.0
1
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical T_Th_Her_Em_Ra_Ml R_Aes_Lis_Cta_Hnc_Ae_R(N_Ao_Cte_T2_E) _RISTICS
Typical Junction Capaci_Cta_hn_ace_ra(_cN_to_et_re_is1_t)_ic
Operating T_Te_om_tap_le_Dra_etu_vir_ce_eR_Da_in_sg_se_{ipation (1)}
Storage Tem_Tpe_Ara₌t₂u₅re_°CRange
IFSM
RΘJA
CJ _Symbol
TJ
PD
TSTG
-55 to +^M1^a2^x5
150
B ASE
30
2
40
EMIT T ER
Unit
mW
120
MM_-5B₅ T_to3₊9₁0₅6₀WT1
- 65 to +175
Amps
℃/W
PF
℃
℃
Thermal Resistance, Junction to Ambient
R θJA
833
°C/W
Junction^Ca^Hn^Ad^RS^Ato^Cr^Ta^Eg^Re^IT^Se^Tm^ICp^Serature
Maximum Forward Voltage at 1.0A DC
SYMBOL_TF_JM_,1_T20_s-_tM_g H
VF
FM1_–3₅0₅-M_toH ₊F₁M₅1₀40-MH
0.50
FM_°1_C50-MH FM160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
UNIT
Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-11
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.