MMBT3904TT1 Datasheet, PDF (1/7 Pages) ON Semiconductor – General Purpose Transistors

WILLAS
FM120-M+
MMBT3904TT^T1^HRU
1.0AGSeURnFAeCrEaMlOPUuNTrSpCoHOsTeTKTY BrAaRnRsIERisRtEoCTrIsFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
NPN^FeS^ail^ti^uco^ren^s
• Batch process design, excellent power dissipation offers
FEAbTeUttRerEreverse leakage current and thermal resistance.
ƽ^•S^Lim^owpli^pfie^ros^fC^ileirc^su^uit^rfD^ae^cs^eig^mn^o. ^{unted application in order to}
optimize board space.
ƽ_• R_LooH_wS_pop_wro_ed_ru_loct_sf_so_,r_hp_iga_hck_ein_ffg_icc_ieo_nd_ce_y.suffix "G"
• ^HH^aig^loh^gc^euⁿrr^fre^en^et ^pca^rop^da^ub^ci^tlit^foy,^r l^po^aw^cf^koⁱⁿrw^g a^cr^od^dv^eo^slt^ua^ffg^ixe ^"d^Hro^" p.
• High surge capability.
OR^• D^GE^uR^arI^dN^rG^ingIN^foF^rO^oR^veM^rA^voT^ltI^aO^gN^{e protection.}
• Ultra high-speed switching.
•^DS^ei^vliⁱc^co^en epitaxial pla^Mna^ar^rkcⁱhⁿi^gp, metal si^Slic^ho^ipn^pjⁱuⁿn^gction.
M^•M^LB^eT^a3^d9^-0^fr4^eT^eT^p1^{arts meet} M^enA^vironment3^a0^l 0^s0^ta/Tⁿa^dp^ae^r&^dR^s e^oe^f l
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAX_MIM_eU_cM_hR_aAT_nIN_icG_aS_{l data}
• Epo^Rx^ay^ti:ⁿU^gL94-V0 rated flam^Se^yr^me^bta^or^ldant ^Value
Unit
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-523
0.040(1.0)
0.024(0.6)
C_•ol_Cle_act_so_er–_:E_Mm_oit_lt_de_er _dVo_pl_lt_aag_se_{tic, SOD-}V₁₂C₃EO_H
40
Vdc
C•olTleecrtmori–nBaalsse:PVloalttaegdeterminals,VsoClBdOerable per 6M0IL-STD-75V0d^,c
0.031(0.8) Typ.
0.031(0.8) Typ.
3
COLLECTOR
Emitter–Base V^Molt^ea^tg^he^{od 2026} V _EBO
6.0
C^•ol^Ple^oc^lt^aor^r
i_Cty_ur:_rI_en_nd_t
i_—ca_Cte_od_ntb_iny_uc_oa_ut_sh
o
d
e_I
b
C
a
n
d
200
Vdc
mAdc
Dimensions in¹inches and (millimeters)
BASE
• Mounting Position : Any
THERMAL CHARACTERISTICS
• Weight : Approximated 0.011 gram
Characteristic
Symbol
Max
Unit
2
EMITTER
Total Devic^Me^AD^Xiss^IMipa^Utio^Mn F^RR^A–^T4^INBo^Gar^Sd, ^A(1^N) ^{D ELECTR}P^ID^{CAL CHAR}20^A0^CTERISm^TW^ICS
RatingTsAa=t 25℃°C ambient temperature unless otherwise specified.
SingleDpehraaste ahbaolfvwea2v5e°,C60Hz, resistive of inductive load.
1.6
mW/°C
For caTphaecirtmivael lRoaedsi,sdtaenracete, Jcuunrrcetinotnbtyo 2A0m%bient
RθJA
600
°C/W
Total Device Dis_Rsi_Apa_Tt_Ii_Non_GS
Marking^FC^Ro^-4de^{Board(2), TA = 25°C}
Maximu^Dm^erR^ae^tecu^arr^be^on^vt^eP²e⁵a^°k^CReverse Voltage
Maximu^Tm^heR^rM^mS^alV^Ro^elt^saⁱg^se^{tance, Junction to Ambient}
Junction and Storage Temperature
Maximum DC Blocking Voltage
SYMBOL^PF^DM120-MH FM130³-⁰M⁰H FM140-MH^mF^WM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30^2.4 40 ^mW/°5^C0
60
VRMS ^RθJA 14
21⁴⁰⁰ 28 ^°C/W35
42
VDC ^{TJ , Tst}2^g 0
–55 to +150
°C
30
40
50
60
18
10
115 120
80
100
150
200
56
70
105
140
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
DEVICE MARKING
Peak Forward Surge Current 8.3 ms single half sine-wave
superim^Mpo^Ms^Bed^To³n⁹⁰ra⁴te^Td^T1loa⁼d^M(J^AEDEC method)
IFSM
30
Typ_Eic_La_El T_Ch_Ter_Rm_Ia_Cl _ARe_Lsi_Cst_Han_Ace_R(_AN_Cot_Te_E2_R) _{ISTICS (TA = 25°C}R_uΘ_nJA_{less otherwise noted.)}
Typical Junction Capacitance (Note 1)
Operating Temperatu^Cre^hR^aa^ran^cg^te^eristic
CJ
TJ ^{Symbol -55 to M+1in25}
Sto_Ora_Fge_FT_Ce_Hm_Ape_Rra_Atu_Cre_TR_Ea_Rn_Ig_Se_TICS
TSTG
40
120
Max
Unit
-55 to +150
- 65 to +175
Collector–Emitter Breakdown Voltage(3)
CHARACTERISTICS
Maximu^(Im^CF⁼o¹rw^.0a^mrd^AV^do^clt⁾age at 1.0A DC
Maximu^Cm^olA^lev^ce^tora^rg^–e^BaR^se^eve^Br^rs^ee^aC^kdu^orr^wenⁿt ^Va^ot ^lta@^gT^eA=25℃
Rated D^(IC^{C =}Blo¹c⁰k^µin^Ag^dV^co⁾ ltage
@T A=125℃
Emitter–Base Breakdown Voltage
V (BR)CEO
40
—
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
V (BR)CBO
IR
V (BR)EBO
0.50
0.70
0.85
60
—
Vdc_0.5
10
6.0
—
Vdc
0.9
0.92
NOTES:(I E = 10 µAdc)
1- MeasBuraesdeaCt 1uMtoHffZCaunrdreanptplied reverse voltage of 4.0 VDC.
I BL
—
50
nAdc
2- Therm( aVl RCEe=sis3t0anVcedcF,roVmEBJu=nc3t.io0nVtodcA,m)bient
Collector Cutoff Current
I CEX
—
50
nAdc
( V CE = 30Vdc, V BE = 3.0Vdc )
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
2012-11^2012-06
WILLAS^WE^ILL^LE^AC^STR^ELO^EN^CIC^TRC^OO^NR^ICP.^COR