MMBT3904LT1 Datasheet, PDF (1/7 Pages) Motorola, Inc – General Purpose Transistor

WILLAS
General Purpose Transistor
• RoHS product for packing code suffix "G",
Halogen free product for packing code suffix "H" _.
• Weight : 0.008g
ORDERING INFORMATION
Device
Marking
Shipping
M MBT3904LT1
1AM
3000/Tape & Reel
MMBT3904LT1
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
°C/W
–55 to +150 °C
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
40
—
(I C = 1.0 mAdc)
Collector–Base Breakdown Voltage
V (BR)CBO
60
—
(I C = 10 µAdc)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc)
V (BR)EBO
6.0
—
Base Cutoff Current
I BL
—
50
( V CE= 30 Vdc, V EB = 3.0 Vdc, )
Collector Cutoff Current
I CEX
—
50
( V CE = 30Vdc, V BE = 3.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
nAdc
nAdc