MMBT3904DW1T1 Datasheet, PDF (1/7 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistor

WILLAS
MMBT3904DW^F1^MT_T¹1_H²_R⁰_U^-M+
D_1.u_0Aa_Sl_URG_FAe_Cn_E e_MOr_Ua_Nl_TP_SCu_Hr_Op_TTo_KYs_Be_ART_RIr_Ea_Rn_REs_Ci_Ts_IFt_IEo_Rr_{S -20V- 200V}
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
Th_•e_LM_owM_pB_owT_e3_r9_lo0_s4_sD_, W_hig1_hT_e1_fficd_ie_ev_ni_cc_ye_. is a spin–off of our popular
SOT_•–2_H3_ig/S_hO_cuT_r–_re3_n2_t3_cath_pr_ae_be_il–_itl_ye_,a_ld_oe_wd_fod_re_wv_ai_rc_de._voI_lt_tai_gs_ed_de_rosi_pg_.ned for general
purp•osHeighamsuprlgifeiecrapaapbpillitiyc.ations and is housed in the SOT–363
0.146(3.7)
0.130(3.3)
65
six–l•eaGdueadrdsruinrfgacfoermovoeurnvtopltaacgkeapgreo.teBcytiopnu.tting two discrete devices in
one •pUacltkraagheig, ht-hsipseeddevswicietchisingid. eal for low–power surface mount
appli^•c^Satⁱi^lio^cn^osⁿw^ephⁱe^tare^xib^ao^l a^pr^ladⁿs^ap^ra^cc^he^ipis^{, m}at^ea^tap^l r^se^ilm^ici^ouⁿm^ju. ^nction.
• hF^•_E^L,^e1^a0^d0^-f–^r3^e0^e0^{parts meet environmental standards of}
•
MIL-STD-19500 /228
Lo_• w_RoV_{HCSEp(rosdaut)c},_t≤_fo0_r ._p4_acV_{king code suffix "G"}
• Sim^Hp^al^li^of^gie^esⁿC^fri^er^ecu^pi^rot ^dD^ue^cs^t i^fg^orn^{packing code suffix "H"}
• Re^Mdu^ec^ces^hB^aoⁿard^icS^apa^lc^de ^ata
1
2
3
SOT-363
(3)
(2)
• Re^•d^Eu^pc^oe^xs^yC^: o^Um^L9p⁴o^-n^Ve⁰nt^raC^teo^dun^flt^{ame retardant}
• Av^•a^Cil^aa^sb^ele^{: M}in^o8^ldm^edm^p,^la7^s–^tiⁱn^cc^, h^S/^O3^D,0^-0¹0²³U^Hnit Tape and Reel
•
,
D^•ev^Ti^ec^re^mMⁱⁿar^lski^:n^Pg^la: ^tM^edM^teB^rmTⁱ3ⁿ9^a0^ls4^,D^soW^ld1^eT^ra1^b=^le M^peA^{r MIL-STD-750}
Q₁
0.031(0.8) Typ.
0.012(0.3) Typ.
4
0.071(1.8)
0.056(1.4)
(1)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Q₂
• Weight :0.005^Mg^{ethod 2026}
• Polarity : Indicated by cathode band
Featr_•u_Mes_{ounting Position : Any}
z
Ro_• H_WS_eip_gr_ho_td_:u_Ac_pt _pfo_rr_o
packing
ximated
code suffix "G",
0.011 gram
Halogen free product for packing code suffix "H".
Dimensions in inches and (millimeters)
(4)
(5)
(6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R^Mati^Ang^Xs^IMat^U2^M5℃^RAam^TIb^Nie^Gn^St temperature unless otherwise specified.
Single phas_Re_ah_tia_nlf_gwave, 60Hz, resistive of in_Sd_yu_mct_biv_oe_l load. _Value
Unit
ORDERING INFORMATION
For_Cc_oa_llp_ea_cc_toit_riv_–e_Emlo_ia_ttd_e,_rd_Ve_or_la_tate_gecurrent by 20% _VCEO
40
Vdc
Device
Marking
Shipping
Collector–Base Vol^Rta^Ag^Te^INGS
Marking Code
V_CBO
SYMBOL₆F₀M120-MH FM1_V3_d0_c-MH FM140-MH_MF_MM_B15_T0₃-M₉H₀₄F_DM_W16₁0-_TM₁H FM1_M80_A-MH FM110₃0₀-M₀H₀ F_UM_n1_it1_s5_/0_R-M_eeH_lFM1200-M
12
13
14
15
16
18
10
115 120
Max^Eim^mu^itm^teR^r–e^Bc^aur^sr^een^Vt^oP^lte^aa^gk^eReverse Voltage ^VEBO VRRM ^6.0 20
3^V0^dc
40
50
60
80
100
150
200
Max^Cim^ou^llem^cR^toM^{r C}S^uV^ro^reltⁿag^t e^{– Continuous}
I_{C VRMS} 200 ₁₄
m₂A₁dc ₂₈
35
42
56
70
105
140
Max_Eim_leu_cm_troD_sC_taB_ticlo_Dck_isin_cg_hV_aro_glt_eage
ESD VDHCBM>1602000, 3V0
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO^MM>2000
1.0
Pe^Tak^HF^Eor^Rw^Mard^AS^Lur^Cge^HC^Au^Rrre^An^Ct 8^T.3^Em^Rs^Is^Sin^Tg^Il^Ce h^Salf sine-wave _IFSM
30
superimposed on^Cr^ha^ate^rd^aclo^ta^ed^ri(^sJ^tE^icDEC method) ^Symbol
Max
Unit
TypTicoatlaTl hPearcmkaalgReeDsisistsainpcaeti(oNno⁽¹te⁾ 2)
Typica^Tl AJu⁼nc²t⁵io^°n^CCapacitance (Note 1)
Ope_Tra_ht_ein_rmg T_ae_l m_Rep_se_ir_sa_tt_au_nre_ceRa_Jung_ne_{ction to}
StoragAemTbeimenpterature Range
P_D
R_qJA
RΘJA 150
CJ
TJ ₈₃₃
TSTG
mW
-55_°Cto_/W+125
40
120
- 65 to +175
-55 to +150
Junction and Storage
Temperature ^CR^Ha^Ang^Re^ACTERISTICS
Maximum Forward Voltage at 1.0A DC
T_J, T_stg
–55 to +150
°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
M¹a^.xi^Dm^eu^vm^icA^ev^mer^oa^ugⁿe^teR^dev^oeⁿrs^Fe^RC⁴u^grr^le^an^st^sa^et ^po@^xT^y
R¹a^.ted^reD^coC^mB^mlo^ecⁿki^dn^eg^dV^fo^ol^ota^tpge^rint.
@T
A^p=^ri2ⁿ5^te℃^d
circuit board
IR
A=125℃
using
the
minimum
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.