MMBT2907LT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – General Purpose Transistors

WILLAS
General Purpose Transistor
PNP Silicon
• RoHS product for packing code suffix "G",
Halogen free product for packing code suffix "H" _.
• Weight : 0.008g
MMBT2907LT1
MMBT2907ALT1
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
2907 2907A
–40 –60
–60
–5.0
–600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
MMBT2907LT1 = M2B, MMBT2907AL T1 = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = –10 mAdc, I B = 0)
MMBT2907
MMBT2907A
Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0)
Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc)
Collector Cutoff Current
( V CB = –50Vdc, I E = 0)
MMBT2907
MMBT2907A
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CEX
I CBO
( V CB = –50Vdc, I E = 0, T A =125°C )
MMBT2907
MMBT2907A
Base Current( V CE = –30Vdc, V = EB(off) –0.5Vdc )
IB
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min
–40
–60
–60
–5.0
—
—
—
—
—
—
Max
—
—
—
—
–50
–0.020
–0.010
–20
–10
–50
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc