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MMBT2907AWT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – General Purpose Transistor
WILLAS
FM120-M+
MMBT2907AWTTH1RU
1.0GA SeUnRFeACrEaMl OPUNuTrSpCHoOsTTeKYTBArRaRnIEsR iRsECtToIFrIERS -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
PNP Silicon better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
•FHEiAghTUcuRrrEent capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•WHeigdhescularrgeetchaapt athbeilimtya. terial of product compliance with RoHS requirements.
•PGbu-Farrdereinpgafocrkoavgeerviosltaagveaiplarobtelection.
•RUolHtraShpigrohd-supcetefdorswpaitcchkiinngg. code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
•HLaelaodg-efrneefrepaertpsromdeuect tefnovrirpoancmkeinngtacl sotdaendsaurfdfisxo“fH”
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
•ORRoDHSERprIoNdGucItNfoFrOpaRcMkinAgTcIOodNe suffix "G"
Halogen free product for packing code suffix "H"
MecDhevaicne ical data Marking
Shipping
SOT–323
•
MMBT2907AWT1
Epoxy : UL94-V0 rated
flame
20
retardant
3000/Tape&Reel
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
3
0.031(0.8) Typ.
COLLECTOR
y MAXIMUM RMAeTthINodG2S026
r • Polarity : Indicated by cathode band
Rating
Symbol
Value
Unit
• Mounting Position : Any
1
Dimensions in inches and (millimeters)
BASE
a •
Collector–Emitter Voltage
Weight : Approximated 0.011
V
gram
CEO
Collector–Base Voltage
V CBO
– 60
Vdc
– 60
Vdc
2
EMITTER
in EmittMerA–BXaIsMe UVoMltagReATINGS AVNEDBOELECTR–I5C.0AL CHAVRdAcCTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phasCeohllaelcftworaCveu,rr6e0nHt —z, rCeosnisttiinvueooufsinduIcCtive load. – 600
mAdc
For capacitive load, derate current by 20%
lim THERMAL CRHAATRINAGCSTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Characteristic
Maximum ReTcoutrarel DntePveicaekDRiesvseiprsaetioVnolFtaRg–e5 Board, (1) VRRM
e Maximum RMTSA =Vo2l5ta°gCe
VRMS
Maximum DCThBelorcmkainlgRVeoslitsatgaence, Junction to Ambient VDC
S1y2mbol 13
20PD
30
14
21
2R0 θJA
30
Ma1x4
15040
28
83430
1U5nit 16
5m0 W 60
35
42
5°0C/W 60
18
10
115 120
80
100
150
200 Volts
56
70
105
140 Volts
80
100
150
200 Volts
Pr Maximum AvJeurangcetioFnorawnadrdSRtoeractgifeieTdeCmuprreernatture
IO
TJ , Tstg
–55 to +150
°C
1.0
Amp
Peak Forward Surge Current 8.3 ms single half sine-wave
superimpoDsEedVoInCrEateMdAloRadK(JINEDGEC method)
IFSM
30
Amp
Typical ThermMalMRBesTi2st9a0n7cAeW(NTo1te=22)0
RΘJA
40
℃/W
TOyppeircaatlinJgEunLTceEtimoCnpTeCRraaItpuCarAecitRLaanCncegHe(ANRotAe C1)TERISTICS
(TA
=
C25J °C
TJ
unless
othe-5rw5 itsoe+n1o2te5d.)
120
-55 to +150
PF
℃
Storage Temperature RangCeharacteristic
TSTG
Symbol
Min
Max - 65 tUo n+i1t 75
℃
OFF CHACRHAACRATCETREIRSITSITCICSS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum FoCrwoallredcVtoorl–taEgmeiattte1r .B0AreDakCdown Voltage(2) VF
V (BR)CEO
0.50–60
—0.70
Vdc
0.85
0.9
0.92 Volts
Maximum Av(eIrCa=ge–R1e0vemrsAedcC,uIrrBe=nt0a)t @T A=25℃
IR
Rated DC BloCcoklilnegctVoor–ltEagmeitter Breakdow@nTVAo=l1ta2g5e℃
(I C = – 10 mAdc, I E = 0)
NOTES: Emitter–Base Breakdown Voltage
1-
Measured
a(tI
1
E
=MH–Z10aµnAd dacp,pIlieCd=re0v)erse
voltage
of
4.0
VDC.
2- Thermal ReBsiasstaencCeuFtoroffmCJuurnrcetniotn to Ambient
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
V (BR)CBO
V (BR)EBO
I BL
–60
–5.0
—
0.5
—
10Vdc
—
Vdc
– 50
nAdc
mAmp
Collector Cutoff Current
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
I CEX
—
– 50
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
20122-01112-06
WILLWAISLLEALSEECLTERCOTNRIOCNCICOCROPR. P.