MMBD4448 Datasheet, PDF (1/2 Pages) Won-Top Electronics – SURFACE MOUNT FAST SWITCHING DIODE

WILLAS ^FM120-M+
150mA Surface Mount Switching Diode-100V
1.0A SURFACE MOUNT SCHOTTKY _SB_OAR_TR_-2IE₃R_PR_aE_cC_kT_aI_gFI_eERS -20V- 200V
MMBD4448 ^THRU
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
FEAT•UBRatEchSprocess design, excellent power dissipation offers
* Fast sw^bi^etc^th^tein^rg^reS^vp^ee^re^sd^e. ^{leakage current and thermal resistance.}
* Elect^•ric^La^oll^wy l^pd^re^on^ftⁱi^lc^ea^sl ^uto^rfS^at^ca^end^me^ord^unJE^teD^dE^aC^{pplication in order to}
optimize board space.
* High_•C_Lo_on_wdu_pc_ota_wn_ec_re_{loss, high efficiency.}
* Surfa_•c_He _iM_ghou_cn_ut_rP_rea_nc_tka_cg_ae_pald_be_ia_lil_tl_yy_, S_lou_wite_fd_orf_wor_aA_rdut_vo_om_lta_ati_gc_eln_ds_re_or_ptio_. n.
* RoHS_{• H}pr_io_gd_hu_sc_ut _rfo_gr_ep_ca_ac_pk_ain_bg_ilc_ito_yd_. e suffix "G"
Halog•eGnufraeredrpirnogdufocrt foovrepravcoklitnaggceopdreosteucfftiixo"nH."
* Mois•tuUreltrSaehnisgihti-vsitpyeLeedvsewl 1itching.
MEC^•H^SAⁱN^licI^oCⁿA^eL^piD^taA^xiT^alA^{planar chip, metal silicon junction.}
• Lead-free parts meet environmental standards of
Case: SMOITL--2S3TpDla-1st9ic5c0a0s/e2.28
Top View
Termin•a^Rls^oH: S^So^pld^re^or^da^ub^cl^te^fp^oe^r r^pM^acI^kLⁱ-ⁿS^gTD^co-7^d5^e0^s,^uM^ffe^ixth^"o^Gd^"2026
SINGLE
Standar^Hd^ap^loa^gc^ekaⁿg^fi^rn^eg^e: ^p8^rm^odm^ucta^t p^foe^{r packing code suffix "H"}
Weigh^Mt: a^epp^cro^hxi^amⁿateⁱl^cy ^a0.^l00^d0^a3 ^tou^ances, 0.0084 grams
• Epoxy : UL94-V0 rated flame retardant
Package outlin_Se_OT-23
SOD-123H
.122(3.10)
.106(2.70)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.080(2.04)
.070(1.78)
0.071(1.8)
0.056(1.4)
.008(0.20)
.003(0.08)
.004(0.10)MAX.
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.020(0.50)
.012(0.30)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
M^{• P}A^oX^laIM^ritU^{y :}M^InR^diA^caT^teIN^d G^byS^caA^tN^hoD^deE^bL^aEⁿC^d TRICAL CHARACTERISTICS
Dimensions in inches and (millimeters)
Rating^•s ^Mat^o2^u5ⁿ℃^tingam^Pb^oi^seⁱn^tt^ioteⁿm^: p^Aeⁿr^yature unless otherwise specified.
Single•pWhaesieghhta:lfAwpapvreo,x6i0mHazt,erdes0i.s0ti1v1e gorfainmductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃RAaTmINbGieSnt temperature unless otherwise SspYeMcBifiOedL.
MMBD4448
UNIT
SMinagrlkeinpghaCsoedhealf wave, 60Hz, resistive of inductive load.
A3
FRoer vcearpsaecVitiovletalgoead, derate current by 20%
VR
75
Volts
Peak Reverse Voltag_Re_ATINGS
M^Rar^Mki^Sng^VC^oo^ltd^ae^ge
M^Max^aim^xiu^mm^umRe^Dcu^Crr^Ben^lot^cP^keⁱⁿa^gk R^Ve^ov^lte^ar^gs^ee Voltage
Maximum Average Forward Current
Maximum RMS Voltage
Peak Forward Surge Current 1.0us
M_Pax_oi_wm_eu_rm_DD_isC_siB_pl_ao_tc_iok_ning_DV_ero_alt_ta_eg_Ae_{bove Ta=25 ℃}
M_Tax_yi_pm_icu_am_{l T}A_hv_ee_rra_mg_ae_l F_Ro_er_sw_isa_tr_ad_nR_ce_ectified Current
SYMBO^VL^RF^MM120-MH FM130-MH FM140-MH F¹M⁰1⁰50-MH FM160-MH FM180-MH FM1100^V-M^olH^tsFM1150-MH FM1200-MH UN
VRMS ₁₂
13
14
50₁₅
16
18
10 ^Volts 115
120
VRRM ^VDC 20
30
40
75₅₀
60
80
100^Volts 150
200 Vo
VRMS ^IAV 14
IFSM
21
28
1540₃₅
42
VDC _PTOT 20
30
40 ₂₅5₀0
60
56
70^mAmps 105
140 ^Vo
80
Amps
100_mW 150
200 ^Vo
IO _RΘJA
357
1.0
℃/W
Am
Pe^Ta^yk^pF^ico^arw^{l J}ar^udⁿS^cu^tir^ogⁿe ^CCu^ar^pre^an^ct^it8^a.3^ncm^es sing⁽l^Ne ^oha^telf ¹si⁾ne-wave
su^Ope^pr^eim^rap^toⁱⁿse^gd^aoⁿn^dra^Ste^tod^rl^ao^ga^ed (^TJ^eE^mDE^pC^erm^ate^uth^reod^R) ^ange
CJ
IFSM_{TJ ,TSTG}
4
PF
-55~+150
30
℃
Am
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Ty^Ep^li^eca^cl^tJ^riu^cn^ac^lti^Ron^aC^tinap^ga^sci^@tan^Tc^Ae ⁼(N²o⁵t^℃ e 1)
CJ
120
P
Operating Tempera^Ctu^Hre^AR^Ra^An^Cg^Te^ERISTICS
TJ^{SYMBOL -55 to +125 MMBD4448}
-55 to +1^U5^N0^IT
℃
St_Mor_aa_xg_ie_mT_ue_mmp_Fe_ora_rwtu_are_rdR_Va_on_lg_tae_ge
@ 0.005A DC _{TSTG VF}
0.72
- 65 to +175
Volts
℃
@0.1A DC
1.00
Maximum Averag^Ce^HR^Ae^Rv^Ae^Crs^Te^EC^Ru^ISrr^Te^ICnt^{S@75V DC}
Maximum Forward Voltage at 1.0A DC ^{@25V DC}
M^Rax^eim^veu^rm^seA^Rve^er^ca^og^ve^eR^ryev^Te^imrs^ee Cu^(Nrre^on^tet a²t⁾ @T A=25℃
Ra^Nte^od^teD^: C Blocking Voltage
@T A=125℃
1. CJ at VR=0, f=1MHZ
SYMBOL_IRFM120-MH FM130-MH FM140-MH F²M^.5150-MH FM160-MH FM180-MH FM110^u0-^AM^mH^pF^sM1150-MH FM1200-MH UN
VF
0.50
25 _0.70
0.85 ^nAmps 0.9
0.92 Vo
Trr
IR
4
0.5
sec
mA
10
NO₂T_.FE_rS_o:_{m IF=10mA to IR=1mA, VR=6Volts, RL=100Ω}
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-²1⁰^12-06
WILLA^WS^ILE^LL^AE^SC^ET^LR^EO^CN^TI^RC^OC^NO^ICR^CP^O. ^RP.