MMBD4148W Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

WILLAS
MMBD4148^FW^M_T¹_H²_R⁰_U^-M+
SOT-323 Plastic-Encapsulate DIODE
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
SWITCH^bI^eN^ttG^er D^reI^vO^erD^seE^{leakage current and thermal resistance.}
• Low profile surface mounted application in order to
optimize board space.
FEATU^•R^LE^owS^{power loss, high efficiency.}
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S^cuw^rri^etⁿc^th^ci^an^pg^abS^ilip^tye^, e^lod^w
surge capability.
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ltage
drop.
z •FGouraGrderinneg rfoarloPveurrvpooltasgee Sprwotietccthioinn.g Applications
z ^•H^Uig^ltrh^a C^higo^hn^-sd^pu^ec^et^da^sn^wc^ite^ching.
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• Silicon epitaxial planar chip, metal silicon junction.
•^PL^be^-a^Fd^r-^efr^eee^papa^cr^kts^agm^eee^ist e^an^vvi^aro^iln^am^be^lental standards of
R^MoH^ILS^-Sp^Tr^Do^-d¹u⁹⁵c⁰t ⁰fo^/r²²p⁸acking code suffix ”G”
•_HRH_aoa_loHlo_gSg_eepnnrof_frdreueecetpfr_poor_rdopu_dacct_ukf_coinrtgp_{foacocrkdpienagsc}uc_kfof_ii_ndxeg"Gs_{cu"offdixe"Hs"uffix “H”}
z M_Mo_eis_ct_hur_ae_nS_ie_cn_asi_lti_dvi_aty_taLevel 1
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Marking^•:^CasA^e2^{: Molded plastic, SOD-123H}
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Maximum Ratings_Mea_tn_hod_dE₂₀le₂c₆trical Characteristics, Single Diode @T_A=25℃
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Parameter
• Mounting Position : Any
Non-Re_•p_Wet_eit_ii_gv_he_t P_{: A}e_pa_pk_rore_xv_ime_ars_tee_dv₀o_.0lt₁a₁g_ge_ram
Symbol
V_RM
Limits
100
Dimensions in inches and (millimeters)
Unit
V
Peak Repetitive Peak reverse voltage
Working Peak R^Me^Av^Xer^IMse^UV^Molt^Rag^Ae^TINGS
AND
ELE_VVC_RRWT^RMMRICAL
CHARACTE₇R₅ ISTICS
V
D^RC^aB^tinl^go^sc^ak^tin²g^{5℃ a}V^mo^blt^ieaⁿg^te^{temperature unless otherwise s}V^p_R^ecified.
Single phase half wave, 60Hz, resistive of inductive load.
R_FM_oS_{r c}R_ape_av_ce_itr_ivs_ee_loV_ao_dl_,ta_dg_ere_{ate current by 20%}
V_R(RMS)
53
V
Forward Continuou_Rs_AC_Tu_INrr_Ge_Snt
SYMB^IFO^ML FM120-MH FM130-MH FM³1⁰40⁰-MH FM150-MH FM160-MH FM180-MH F^mM1^A100-MH FM1150-MH FM1200-MH U
AMvaerkrainggeCoRdeectified Output Current
I_{O 12}
13
1₁5₄0 ₁₅
16
18 ^mA10
115 120
P^Me^aa^xk^imf^uo^mrw^Ra^ecr^ud^rrs^eu^ntr^Pg^ee^akcu^Rr^er^ve^en^rst^e@^Vo=^lt1^a.^g0^eμs
Maximum RMS Voltage
@=1.0s
Maximum DC Blocking Voltage
Power Dissipation
Maximum Average Forward Rectified Current
Thermal Resistance Junction to Ambient
VRRM
20
VRM^IFS^SM 14
VDC_PD
20
IO
R_θJA
J^Pu^en^akc^Fti^oo^rwn^at^rdem^Sup^rge^er^Ca^utu^rrerⁿe^{t 8.3 ms single half sine-wave}
superimposed on rated load (JEDEC method)
S_Tt_yo_pr_ica_ag_l e_Tht_ee_rm_map_l e_Rr_ea_st_isu_tare_{nce (Note 2)}
IFSM_Tj
RΘ^TJA^STG
30
2⁴.⁰0
50
21
1².⁸0
35
30
40
50
200
625
150
-65~+150
60
80
100
42
56
A₇₀
60
80
100
mW
1.0
K/W
30
℃
40
℃
150
200 Vo
105
140 ^Vo
150
200 ^Vo
Am
Am
℃
Typical Junction Capacitance (Note 1)
CJ
120
P
EL_OE_peC_raT_tinR_gI_TC_emA_pL_eraC_tuH_reA_RR_anA_geCTERISTICS (Tamb_T=_J25℃ unles_-s₅₅o_toth₊₁e₂r₅wise specified)
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
Parameter
Symbol
Test conditions
MIN MAX
UNIT
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
M_Ra_exi_vm_eu_rm_seFo_brw_rea_ard_kV_do_olt_wag_ne _va_ot 1_lt._a0A_geDC
Maximum Average Reverse Current at @T A=25℃
R_Ra_ete_vd_eD_rC_seBl_vo_ock_ltin_ag_gV_eo_llt_ea_ag_ke_{age curren}@_t T A=125℃
V^V₍^F_{BR) R}
IR
I_R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-_FT_oh_re_wrm_aa_rl_dRe_vs_ois_lt_ta_an_gce_eFrom Junction to Ambient
V_F
I_R= 10µA ^0.50
V_R=75V
V_R=20V
I_F=1mA
I_F=10mA
I_F=50mA
0.70 ₇₅
0.5
10
0.85
1
25
0.715
0.855
1
V^0.9
µA
nA
0.92 Vo
mA
V
I_F=150mA
1.25
Diode capacitance
C_D
V_R=0, f=1MHz
2
pF
Reveres recovery time
2012-06
2012-1
I_F=I_R=10mA,I_rr=0.1×I_R,
t_rr
R_L=100Ω
4
nS
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.