MMBD3004C Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE

WILLAS
HIGH VOLTAGE SURFACE MOUNT
FM120-M+
MMBD3004C ^THRU
1.0A_SS_WUR_IF_TAC_CE_HM_IO_NU_GNT_DS_IC_OH_DOT_ETKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
•_FBb_EeaAtttceThr _Uprer_Rovce_Eersses
design, excellent power dissipation offers
leakage current and thermal resistance.
• L·o^zwFparsotfiSlewsiutcrfhaicnegmSopuenetedd application in order to
•
o_·zpti_Hm_iiz_ge_hb_Co_oar_nd_ds_up_ca_tac_ne_c. _e
Low power loss, high efficiency.
• H·zighHciugrhreRnet vcaeprsaebiBlitrye,alokwdofowrwnaVrdolvtaogltaegReadtrionpg.
• HzighWsuerdgeecclaapreabthilaitty.the material of product
• Guar^cd^or^min^pg^lif^aoⁿr ^co^eve^wrv^ito^hlt^Ra^og^He ^Spro^rete^qc^utⁱi^ro^en^m. ^ents.
• UzltraMhoigihs-tsupreeedSsewnistcithiivnigt.y Level 1
• _OSil_ric_do_en_re_ip_nit_gax_Iia_nl_fp_ola_rn_mar_ac_th_ii_op,_nm_(Pet_bal_-s_fi_rli_ec_eo₎n junction.
• Lead-free parts meet environmental standards of
MIL-ST_DD_e-1_v9_ic5_e00 /228 _Marking
Shipping
• RoHS product for packing code suffix "G"
H^Malo^Mge^Bn^Dfre³e⁰p⁰r⁴o^Cduct for pack^King^Ac^Code suffix "H³"^{000/Tape&Reel}
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
3
0.012(0.3) Typ.
1
2
SOT –23
0.071(1.8)
0.056(1.4)
MPebc-Fhreaenpiackaalgedias taavailable
• E^Rp^oo^Hx^Sy :^pU^roL^d9^u4^c-V^{t f}0^orra^pt^ae^cd^kfⁱlⁿa^gm^ce^or^de^eta^sr^ud^fa^fin^xt^{”G”}
•
Halogen free product
Case : Molded plastic,
for packing
SOD-123H
code
suffix
“H”
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
1
ANODE
CAHODE
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
2
ANODE
• P_Mola_ari_xty_im: In_ud_mica_Rted_atb_iy_nc_ga_sth_@ode_Tb_Aa₌n₂d_{5℃ unless otherwise specified}
• Mounting Position : A_Cn_hy_aracteristic
Symbol
• W_Re_ei_pg_eh_tt_it:_ivA_ep_Pp_ero_akxi_Rm_ea_vt_ee_rd_se0_V.0_o1_lt1_agg_eram
VRRM
Dimensions in inches and (millimeters)
Value
Unit
350
V
WorkiMngAPXeaIMk RUeMverRseAVToIlNtaGgeS AND ELECTRICAL CHAVRRWAMCTERISTICS
300
V
Ratings at_D2_C5℃_Bloa_cm_kb_inie_gn_Vt _ote_ltm_agp_erature unless otherwise specified.
VR
Single pha_Rs_Me h_Sa_Rlf _ew_va_ev_re_se, 6_V0_oH_ltz_a,_gr_eesistive of inductive load.
VR(RMS)
212
V
For capacitive load, derate current by 20%
Forward Continuous Current(Note 2)
IF
225
mA
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Co^Pde^{eak Repetitive Forward Current(Note 2)}
12
1^I3^FRM 14
15 ⁶²⁵ 16
18 ^mA10
115 120
Maximum R_Ne_ocu_nr_-r_Ren_et_pP_ete_ia_tik_vR_e e_Pv_ee_ar_kse_FV_oo_rwlta_ag_re_{d Surge Curre}V_nR_tRM_@t=1.2₀0_µs
Maximum RMS Voltage
VRMS _@t=11_.04_s
Maximum DC Blocking Voltage
Power Dissipation(Note 2)
Maximum Average Forward Rectified Current
VDC
20
IO
Thermal Resistance Junction to Ambient Air(Note 2)
30
40
2^I1^FSM 28
30
40
Pd
R0JA
50 _4.0 60
35 _1.0 42
50
60
350
1.0
357
80
100
56
A ₇₀
80
100
mW
℃/W
150
200 Vo
105
140 ^Vo
150
200 ^Vo
A
Peak
Forward Surge Current
Operating and
S^8.t³or^ma^sg^seⁱⁿT^ge^lem^hp^ae^lfr^saⁱtⁿu^er^-e^waR^va^enge^IFSM
Tj, TSTG
-65 to +150 ³⁰
℃
A
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junc_Etio_len _cC_ta_rp_ia_cci_ata_lnc_Ce _h(N_aot_re_a1_c) _teristics
Operating Temperature Range
@
TA^CT=_JJ25℃
unless_-5o₅th_toer₊w₁₂is₅e
specified,
per
elem¹e²⁰nt
-55 to +150
P
℃
Storage Temperature Rang^Ce ^{haracteristic}
TSTG^{Symbol Min Typ MAX Unit} - 65 to ^T+^e1^s7^t5^Condition
℃
Reverse Breakdown Voltage(Note 1)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum A^Fve^or^ra^wg^ae^rR^de^Vv^oe^lr^ts^ae^gC^e(u^Nrr^oe^tn^et ¹at⁾ @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
V(BR)R 350
V IR=100µA
SYMBOL
VF
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.₀7_.58₀ 0.87 _0.70 IF=20mA _0.85
0.9
0.92
UN
Vo
VF
IR
0.93
1.0
V IF₀=_.5100mA
mA
1.03 1.25
IF¹=⁰200mA
NOTES: _{Reverse Current(Note 1)}
IR
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal R_Tes_oi_ts_ata_ln_Cce_apF_aro_cm_itaJ_nu_cn_ection to Ambient
CT
30
100 nA VR=240V
35
100 µA VR=240V, Tj=150℃
1.0
5.0
Pf VR=0V, f=1.0MHZ
Reverse Recovery Time
Trr
IF=IR=30mA
50
ns _{Irr=3.0mA, RL=100Ω}
Notes: 1. Short duration test pulse used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout.
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.