MMBD2004S Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT SWITCHING DIODE

WILLAS
MMBD^F4^M6_T¹_H²_R⁰_U^-M+
SOT-23 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
SWITCH^bI^eN^ttG^{er r}D^evIO^erD^seE^{leakage current and thermal resistance.}
• Low profile surface mounted application in order to
FEATUR^opE^tS^{imize board space.}
SOD-123H
SOT-23
MMBD^••2_HL0^oi0_gw4_hpS_couwt_ry_reep^rne^ltocsis_asp,a_ahibs^gihli_il_ti^eyc_,fo^flion^cwies_fnw_ocryi_wt^.c_ah_rdin_vg_old_tau_ga_el_di_rn_ops_.eries diode
manufa• cHtiugrhesdurbgye cthapeaebipliittya. xial planar process, designed for
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
applica^•ti^Go^un^as^rdr^reⁱⁿq^gu^fi^ori^rn^og^veh^rvig^oh^ltav^go^el^pta^rog^te^ecc^tia^op^n.ability. Power dissipation
Pb-Fre^••e_SUp_illtira_cac_ohnk^iga_ehpg^-ie_tsapxi^es_iaelda_pv^slawa_ni^itl_aca_rhb_cinhle^gip. _{, metal silicon junction.}
RoHS •pLroedadu-cfrtefeorpapratscmkienegt ecnovdireonsmueffnixta”lGst”andards of
0.071(1.8)
0.056(1.4)
Haloge_•n_R^Mf_o^Ir_H^Le^-_Se^S_p^Tp_r^D_or_do^-1_ud_c⁹u_t⁵_fc⁰_ot⁰_r f_p^/o²_ar_c²_k⁸p_ina_gc_ck_oin_deg_sc_uo_ffid_xe_"Gs_"uffix “H”
Moisture_HaS_loe_gn_es_ni_ft_ri_ev_eit_py_roL_de_ucv_te_fol _r1_{packing code suffix "H"}
1
3
Mechanical data
2
• Epoxy : UL94-V0 rated flame retardant
MARKI_•N_CG_as: _eB_:6_MD_{olded plastic, SOD-123H}
,
y _Maxim^•_u^Te_m^rm_Rⁱⁿ_a^a_t^l_i^s_n^:MP_g^l_seatth@^eodd_T^te2_a^r0m₌₂₂ⁱ⁶ⁿ₅^a_℃^{ls, solderable per MIL-STD-750}
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
r Param• Peotlearrity : Indicated by cathode band
• Mounting Position : Any
a Non-Repetitive Peak Reverse Voltage
• Weight : Approximated 0.011 gram
Symbol
V_RM
Lim^Dit^{imensions in inches and (millimeters)}_Unit
300
V
DC Blocking Voltage
V_R
240
V
in ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
P_Re_ata_ink_gR_{s a}e_tp₂e₅t_℃itiv_ae_mC_bu_ier_nr_te_tn_emt _{perature unless otherwise}I_Ospecified.
200
mA
C^Sio^ngn^lt^ein^pu^hao^su^es^haF^lfo^wrw^ava^er^,d⁶⁰C^Hu^zr^,r^re^en^sit^{stive of inductive loa}I^d_F^.
225
mA
For capacitive load, derate current by 20%
lim ^{Peak Repetitive FoRrAwTaIrNdGCSurrent}
SY^IFM^RB^MOL
FM120-MH
FM130-MH FM140-MH
625
FM150-MH
FM160-MH
FM180-MH
mA
FM1100-MH FM1150-MH FM1200-MH
UN
M_Fa_or_rk_wing_arC_dod_Se_{urge Current t=1μs}
Maximum Recurrent Peak Reverse Voltage
M^Fa^ox^rim^wu^am^rdRM^SuS^rV^go^elta^Cg^ue ^{rrent t=1s}
I_FSM
12
13
14
145.0 16
VRRM
20
30
40
50
60
V^IFR^SM^MS
14
21
1.0
28
35
42
18
10 _A 115 120
80
100
150
200 Vol
56
70 ^A 105
140 ^Vol
e _{MPaoxwimeurmDDiCssBilpoacktiinognVoltage}
VPDdC
20
30
40
2550 0
60
80
100 _mW150
200 ^Vol
r _{MJauxnimcutimonAvTereamgepFeorrawtaurrdeRectified Current}
T^IO_J
P _{PSetaokrFaogrwearTdeSmurpgeeCrautrruernet 8R.3amnsgseingle half sine-wave}
superimposed on rated load (JEDEC method)
T_S^IF_T^S_G^M
150
1.0
-55~+150
30
Am
℃
℃
Am
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/
Typical Junction Capacitance (Note 1)
CJ
120
PF
OEpLerEatCingTTReImCpeAraLtuCreHRaAnRgeACTERISTICS (Ta=T2J5℃ unless^-5o⁵t^th^o e⁺¹rw²⁵ise specified)
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
Parameter
CHARACTERISTICS
Ma_Rxi_em_vu_em_rsF_eor_bw_ra_erd_aV_ko_dl_ota_wge_na_vt 1_o._l0_tA_agD_eC
Maximum Average Reverse Current at @T A=25℃
Ra_Rte_ed_vD_eC_rsB_elo_vck_oin_ltg_aV_go_elta_leg_ae_{kage curre}@_nT_t A=125℃
Symbol
Test conditions
Min
Max
Unit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF _V(BR)
IR
I_R
I_R= 10⁰0^.μ⁵A⁰
V_R=240V
0.70 ₂₄₀
0.5
10
0.85
0.1
0_V.9
0.92 Vol
mAm
μA
NOTES:
1- M^Fe^oa^rs^wur^ae^rd^dat^v1^oM^ltH^aZ^ga^end applied reverse voltage of 4.0 VDC. ^VF
I_F=100mA
1
V
2- T_Dh_ie_orm_da_el R_ce_as_pis_ata_cn_ic_te_anFr_co_em Junction to Ambient
C_D
V_R=0V f=1MHz
5
pF
Reveres recovery time
t_rr
I_F=I_R=30mA,R_L=100Ω
50
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.