M7002TTD03 Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-03A Plastic-Encapsulate MOSFETS

WILLAS
W_1.B_0AF_SB_URP_FA-_C0_E3_MA_OUP_Nl_Ta_Ss_Ct_Hi_Oc_T-_TE_Kn_{Y B}c_Aa_Rp_Rs_IEu_R l_Ra_Et_Ce_TIFM_IEO_RSS_-2F_0VE_{- 2}T₀S_0V
SOD-123+ PACKAGE
FM120-M+
M7002T^TT^HD^R0^U3
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
MO^bS^eF^ttE^erT^r(^evN^e-^rC^seh^la^ean^kn^ae^gl^e)^{current and thermal resistance.}
• Low profile surface mounted application in order to
D
WB^SOF^DB^-P¹²-³0^H3A
DE_• S_LoopC_wtiR^mpI^ioP^zweT_ebI_rO^olaoN^{rsds,shpiagchee.} _fficiency.
Hig•hHicgehllcudrernesnittyc,apDaMbOilitSy, tloewchfnoorwloagryd. vTohlteasgee dprroopd.ucts have been designed to
(1.6×1.6×0.5)
unit: m^0.1m^46(3.7)
0.130(3.3)
TOP
0.012(0.3) Typ.
min^• i^Hmⁱi^gz^he^so^un^rg-s^eta^ct^ae^pare^bs^iliⁱs^tyta^. nce while provide rugged, reliable, and fast switching
• Guardring for overvoltage protection.
pe_•rfo_Ur_lm_traan_hc_ige_h. _-T_sph_ee_ey_dc_sa_wn_itb_ce_hinu_gse_. d in most applications requiring up to 400mA DC
an^•d ^Scⁱa^lin^codⁿe^eli^pve^itr^axpⁱu^als^pe^ld^anc^au^rr^cre^hn^ipt^,s^mu^ep^tato^{l s}2^ilA^ic.^oTⁿh^jueⁿs^ce^tip^orⁿo^.ducts are particularly suited
for^•lo^Lw^eav^do^-l^ft^ra^eg^ee^p,^alo^rtw^{s m}cu^er^ere^{t e}nⁿt ^vaⁱp^ropⁿlic^ma^etiⁿo^tn^as^{l s}s^tu^acⁿh^daa^rs^dssm^ofall servo motor control, power
MIL-STD-19500 /228
MO^• S^RF^oHE^ST ^pg^ra^ot^de^ucd^tri^fv^oe^r r^ps^a,^ca^kinⁿd^g o^coth^de^er^ss^uw^ffii^xtc^"h^Gi^"ng applications.
Halogen free product for packing code suffix "H"
Mechanical data
FE_•A_ET_pU_oxR_y E_{: U}S_{L94-V0 rated flame retardant}
Hig_•h_Cd_ae_sn_es_:it_My_oc_le_dl_el _dde_ps_laig_sn_ti
for
c, S
low
OD-
RDS(ON)
123H
Vo_•lta_Tg_ee_rmc_io_nn_at_lr_so_:l_Ple_ld_ats_em_d a_tell_rmsi_ig_nn_aa_lsl _,s_sw_oi_lt_dch_erabl
e
per
MIL
,
-STD-750
0.031(0.8) Typ.
1. GATE
2. SOURCE
3. DRAIN
GS
D _0.071(1.8)
0.056(1.4)
BACK
S
G
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Rugged and reMliaebthleod 2026
Hig^•h^Ps^oa^latu^rir^ta^yt^:io^Inn^dc^icu^arr^te^en^dt^bc^ya^cp^aa^tb^hi^oli^dty^{e band}
Dimensions in inches and (millimeters)
• Mounting Position : Any
AP^• P^WL^eIⁱC^ghA^t T^{: A}IO^ppN^{roximated 0.011 gram}
N-Channel_ME_An_Xha_IMnc_Uem_Me_Rnt_AM_To_INde_GF_Sie_Ald_NE_Dffe_Ec_Lt T_Er_Can_Ts_Ris_It_Cor_{AL CHARACTERISTICS}
RatinFgosrapto2r5ta℃bleamebqiueinptmteemnpt:e(ri.aetu. rMe oubnlielesspohtohneerw,MiseP3sp, eMciDfie,Cd.D-ROM,
Sing_Dle_Vp_Dha_-Rse_Oh_Mal_,f _Nwa_ov_tee,_b6_o0_oH_kz,_Pre_Cs_,is_et_tiv_ce_.)of inductive load.
For capacitive load, derate current by 20%
Pb-Free pack_Ra_ATg_INe_Gi_Ss available
MarkiRngoCHodSe product for packing code
SYMBOL
suffix ”G”
FM120-MH
12
FM130-MH
13
FM140-MH
14
FM150-MH
15
MARKING: 72
D ^{FM160-MH FM180-MH FM1100-MH FM1150-MH}
16
18
10
115
FM1200-MH
120
UNIT
Maxim_Hu_am_loR_gec_eu_nrre_fn_rt_eP_eea_pk _rR_oe_dve_urs_ce_tV_fo_olt_rag_pe_{acking co}V_dR_eRM_suffix2_“0_H” 30
40
50
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
80
7¹⁰2⁰
56
70
150
200 Volts
105
140 ^Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VDC
20
30
40
50
60
80 _G 100_S
150
200 ^Volts
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
superi_Mmp_Aos_Xed_IMon_Ura_Mted_Rloa_Ad_T(J_IE_ND_GEC_Sm₍e_Tth_ao₌d₂) _{5℃ unless otherwise noted)}
Typical The_Srm_ya_ml R_be_os_listance (Note 2)
RΘJ_PA _arameter
Typical Junction Capacitance (Note 1)
CJ
Opera^Vti^Dn^Sg Temperature Range^{Drain-Source Voltage} TJ
-55 to +125
Stora^Vge^GT^SSemperature Range ^{Gate-Source Voltage -}TS^CT^oG^ntinuous
30
40
120
Value
60 _{-55 to +150}
- 65 to +17^±5²⁰
Units
V
V
Amps
℃/W
PF
℃
℃
I_D
Maximum Drain Current - Pulsed
115
mA
P_D
CHARACT_PER_owIS_eT_rIC_DS_issipation
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM1₁8₅0-₀MH FM1100-MH FM1150_m-M_WH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maxim^Ru^θm^JAAverage
Rated^TD^J C Blocking
Reverse
Voltage
Thermal Resistance from
Current at @T A=25℃
Junction_@T_Tem_A=p₁e₂₅ra_℃ture
IR
Junction
to
Ambient
0.5 ⁸³³
10 ¹⁵⁰
℃/W
℃
mAmps
T_stg
Storage Temperature
-55-150
℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.