M7002NND03 Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-03B Plastic-Encapsulate MOSFETS

WILLAS
W_1.0B_{A S}F_UB_RFP_AC-0_E 3_MB_OUNP_Tl_Sa_Cs_Ht_Oic_TT-_KE_Yn_Bc_ARa_Rp_IEs_Ru_Rl_Ea_Ct_Te_IFIM_ERO_{S -}S₂₀F_V-E₂₀T₀S_V
SOD-123+ PACKAGE
FM120-M+
M7002N^TN^HD^R0^U3
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
MOS^bF^etE^teT^r (^reN^ve-C^rsh^e a^len^an^ke^agl ^e) ^{current and thermal resistance.}
• Low profile surface mounted application in order to
D
WB^SF^OB^D-P¹²-0^3H3B
DE_•S_LoC_opwtR^impI^ioP^zweT_ebI_rO^olaoN^{rsds,shpiagchee.} _fficiency.
Hig_•h_Hc_ige_hll_cd_ue_rrn_es_ni_tty_c,_apD_aM_bO_iliS_ty, t_le_oc_wh_fn_oo_rwlo_ag_ry_d. _vT_oh_lte_as_ge_{e d}p_rr_oo_pd_.ucts have been designed to
(1.2×1.2×0.5)
unit: m^0.m^146(3.7)
0.130(3.3)
TOP
0.012(0.3) Typ.
min^•im^Hii^gz^he ^so^un^rg-s^eta^ct^ae^pare^bs^iliⁱs^tyta^. nce while provide rugged, reliable, and fast switching
• Guardring for overvoltage protection.
per_•fo_Ur_lm_tra_an_hc_ige_h. _-T_sh_pe_ey_edc_sa_wn_itb_ce_hiu_ns_ge_. d in most applications requiring up to 400mA DC
and• Scailincodneelivpeitraxpiuallspeldancaurrcrehnipts, mueptatol s2ilAic.oTnhjuenscetiporno.ducts are particularly suited
for^•lo^Lw^eav^do^-l^ft^ra^eg^ee^p, ^alo^rtw^{s m}cu^er^ere^t n^etⁿa^vip^rp^olⁿic^ma^etiⁿo^tn^as^{l s}s^tu^acⁿh^daa^rs^dssm^ofall servo motor control, power
MIL-STD-19500 /228
MO•S^RF^oE^HT^S g^pra^ot^de^ud^ctri^fv^oe^r r^ps^a,^ca^knⁱⁿd^g o^coth^de^er^ss^uw^ffii^xtc^"h^Gin^" g applications.
1. GATE
2. SOURCE
3. DRAIN
GS
D _0.071(1.8)
0.056(1.4)
BACK
Halogen free product for packing code suffix "H"
Mechanical data
FE_•A_ET_pU_oxR_y E_{: U}S_{L94-V0 rated flame retardant}
High density cell design for low RDS(ON)
• Case : Molded plastic, SOD-123H
Vol_•ta_Tg_ee_rmc_io_nn_at_lr_so_:ll_Pe_ld_ats_em_d a_tell_rmsig_inn_aa_lsl _,s_sw_oit_lc_dh_erab
le
per
MIL-STD-75
,
0
0.031(0.8) Typ.
S
G
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Rugged and reMliaebtlheod 2026
Hig^•h^Ps^oa^latu^rir^ta^yti^:o^In^dcⁱu^carr^te^en^dt^bc^ya^cp^aa^tb^hi^olit^dy^{e band}
Dimensions in inches and (millimeters)
• Mounting Position : Any
AP^•P^WL^eIⁱC^ghA^t T^{: A}IO^ppN^{roximated 0.011 gram}
N-Channel_ME_Anh_Xa_In_Mc_Uem_Me_Rnt_AM_To_INde_GF_Sie_Ald_NE_Dffe_Ect_LT_Er_Can_Ts_Ris_It_Cor_{AL CHARACTERISTICS}
Ratin^Fg^os^r a^pt^o2^r5^ta℃^bleam^eqbi^ueⁱn^pt^mte^emⁿp^t:e⁽r^i.a^etu^. r^Me ^ou^bnⁱle^less^phot^ohⁿe^erw^,Mise^P3sp^, e^Mc^Difie^,Cd.^{D-ROM, DVD-ROM, Note book PC, etc.)}
Single phase half wave, 60Hz, resistive of inductive load.
For c^Pa^bpa^-c^Fit^riv^ee^eloa^pd^a, ^cde^kra^at^ge c^eurⁱr^sen^at b^vy^a2ⁱ0^la%^ble
RoHS producRtAfToINrGpSacking code suSffYixMB”OGL”FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180^M-MH^AF^RM^K11^I0^N0-M^GH^:FM⁷1²150-MH FM1200-MH _UNIT
Marki_Hng_aC_lood_ge_{en free product for packing code suffix}12_{“H”} 13
14
15
16
18
10 ^D 115
120
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
80
100
150
200 Volts
56
70 ⁷² 105
140 ^Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VDC
20
30
40
50
60
80
100_{G S}150
200 ^Volts
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
super_Mimp_Aos_Xed_IMon_Ura_Mted_Rloa_Ad_T(J_IE_ND_GEC_Sm₍e_Tth_ao₌d)_{25℃ unless otherwise noted )}
Typical The_Srm_ya_ml R_be_os_listance (Note 2)
RΘJA _Parameter
Typical Junction Capacitance (Note 1)
CJ
Opera^Vti^Dn^Sg
Temperature
Drain-Source
Range
Voltage
TJ
-55 to +125
Stora^Vge^GST^Semperature Range ^{Gate-Source Voltage -}TS^CT^oG^ntinuous
30
40 _Value
120
60 _{-55 to +150}
- 65 to +17^±5²⁰
Units
V
V
Amps
℃/W
PF
℃
℃
I_D
Maximum Drain Current - Pulsed
115
mA
P_D
CHARACT_PE_oR_wIS_eT_rIC_DS_issipation SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM1₁8₅0₀-MH FM1100-MH FM1150_m-M_WH FM1200-MH UNIT
MMaaxxiimm_Ruu_θmm_JAFAovrewraagrde
Rated^TD^J C Blocking
Voltage at 1_T.0_hA_erD_mC_{al Resistance fro}V_mF
Reverse Current at @T A=25℃
Voltage ^Junction@^TeT^mA=^p1^e2^r5^a℃^ture
IR
Junction
to
Ambien⁰t ^.50
0.70
833^0.85
0.5
10 ¹⁵⁰
0.9
0.92
℃/W
℃
Volts
mAmps
T_stg
Storage Temperature
-55~+150
℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.