LS4148 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

WILLAS
LS4148 ^SCS
VOLT
0.1AMP Schott
1N4148 Quadro MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta=25_°C)
Items
Symbol Ratings
Reverse Voltage
VR
75
Reverse Recovery trr
4
Time
Power Dissipation
P
500
3.33mW/_°C (25_°C)
Forward Current
IF
150
Junction Temp.
Tj -65 to 175
Storage Temp.
Tstg -65 to 175
FEATURES
Unit
V^{* Extremely Low VF}
n^*s^{Extremely thin package}
* Low stored chargeCathode Identification
mW^{* Majority carrier conduction}
mA
°^C
°^C
MECHANICAL DATA
Pb Free Product
Qu ad ro
MEL F
1.5 +/-0.1
1.G7lass
.059 (1.5)
.043 (1.1)
SO
.012 (
C
Mechanical Data
Items
Materials
Package
QUADRO MELF
Case
Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
* Case:Molded plastic, JEDEC SOD-323(SC-76)
3.5 +/- 0.2
* Terminal : Solder plated, solderable per MIL-STD-750,
Glass
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
Dimensions in millimeters
* Weight : 0.000159 ounce, 0.0045 gram
Marking Co
Electrical Characteristics (Ta=25_°C)
Ratings
Minimum Breakdown Voltage
MAXIMUM R^SA^ymT^bI^oN^l G AND^RatEⁱⁿL^gsECTRIC^UAⁿL^it CHARAC
BV
100
V
@IR= 100uA
Rating 25^oC ambient temperature unless otherwise specified.
Peak Forward Surge Current
Single phase half wave, 6_I0_FH_sz,_ur_re_gsi_estive of inductive lo₂ad.
A
tp= 1_µsec.
For capacitive load, derate current by 20%
Maximum Forward Voltage
IF= 10mA
Maximum Reverse Current
VR= 20V
Parameter VF
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage ^IR
1.0 Conditions V
0.025
uA
Symb
V_RM
V_R
VR= 75V
Forward Voltage
I _F = 10mA₅D_.0C
VF1
VR= 20V, Tj= 150_°C
I _F = 100m₅A₀DC
V F2
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Reverse Current
Cj
Mean Rectifying Current
V_R = 10V D₄C
pF
I_R
IO
Maximum Reverse Recovery Time
Peak forward surge current _trr
4
ns
I_FSM
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100_{Ω Capacitance between terminals}
CT
Maximum Thermal Resistance (on PC Board 50mOmpxer5a0timngmTxem1.p6emrmat)ure _RθJA
500
°^C/W
T_J
Maximum Rectification Efficiency
Vrf= 2V, f= 100MHz
Storage Temperature
ην
0.45
%
T_STG
WILLAS ELECTRONIC CORP.