HER1601FC Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – 16.0A HIGH EFFICIENCY RECTIFIERS - 50V-1000V

WILLAS
16.0A HIGH EFFICIENCY RECTIFIERS - 50V-1000V
1.0A SURFACE MOUNT SCHOTTK_ITY_OB_-A₂R₂₀RIE_PR_{ASRCOEKDCA-T1G}I2F_E3IE+RSP-A2C0VK-A2G0E0V
HHEERR_FTP^F11_HMb^M66_RF1T00_r¹_Ue2H1_8e²⁰_RFF_P⁰⁰_rUCC^-_o-MdMu⁺_c+t
Features
Featu^• r^Bbe_eas_tttcehr
process
reverse
design, excellent power dissipation
leakage current and thermal resista
offers
nce.
‧Low^• f^Lo^orw^wa^pr^rd^ofv^ilo^elt^sa^ug^re^fad^cr^eo^mp ^{ounted application in order to}
‧Hig_•h _Loc_opu_wtrⁱr^me_pn^iozt_wec_eba_rop_laoa^rsb^dsil_,sit_hpy_{iagchee. fficiency.}
‧Hig_•h _Hre_iglia_hb_ci_ulit_ry_{rent capability, low forward voltage drop.}
‧Hig^•h ^Hsu^igr^hge^suc^ru^gr^ere^cn^at^pc^aa^bp^ila^itb^yi^.lity
‧Hig^•h ^Gsp^ue^ae^rdd^risⁿw^git^fc^oh^r i^on^vg^{ervoltage protection.}
• Ultra high-speed switching.
‧AEC_• -_SQ_il1_ic0_o1_nq_eu_pa_itli_afi_xe_id_{al planar chip, metal silicon junction.}
‧‧M_Pbo_-i_F•s_rLt_Meu_eeIr_aLe_pd-aSS_-cfTe_rkeDn_aeg-s_1peit_9ai_i5v_srt0i_st_a0y_vm/aL_2eile_2eav_8bte_elel_n1_{vironmental standards of}
RoH•SRporHoSdupcrtofdourcptafcokripnagcckoindgecsoudffeixs”uGff”ix "G"
HalogHeanlofrgeeenpfrroedeupcrtofdour cptafcokripnagcckoindge csoudffeixs“uHff”ix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Mech^•a^Cn^aic^seal^{: M}D^oa^lt^de^{ed plastic, SOD-123H}
,
‧Cas^•e^T: ^eIT^rmOⁱ-ⁿ2^a2^l0^{s :Plated terminals, solderable per MIL-STD-750}
Method 2026
‧Case Material: Molded Plastic. UL
• Polarity : Indicated by cathode band
Flammability Classification Rating 94V-0
‧Term^{• M}in^oa^ulsⁿ:^tLⁱⁿe^ga^Pd^oF^srⁱe^tie^onP^:la^Atⁿin^yg (Tin Finish).
• Weight : Approximated 0.011 gram
Solderable per MIL-STD-202, Method 208
Package outline
ITO^SO-^D2^-12²³0^H
.114(2.90)
.098(2.50)
.189(4.80)
.406
(1
0
.30^00..)^{1143..6011((3133..8873(())}
3
3
.50)
.00)
.169(4.30)
0.012(0.3) Typ.
.382(9.70)
.134(3.40)
.110(2.54)
0.071(1.8)
0.056(1.4)
.642(16.30)
.571(14.50)
.067(1.70)
.039(1.00)
0.0.3013(05.(81) T.0yp0.)
.022(0.55)
MAX.(1.80)
.171(4.35)
.138(3.50)
.114(2.90)
0.04^.00(⁹1⁸.0⁽)^2.50)
0.024(0.6)
.560(14.22)
.492(12.50)
0.031(0.8) Typ.
.031(0.80)
.015(0.38)
.108(2.7_D5_i)_{mensions in inches and (millimeters)}
.091(2.30)
‧Weight: 1.64M5AgXraIMmsU(MapRprAoTxiImNaGteS) AND ELECTRICAL CHARACTERIS_DTI_imC_eS_{nsions in inches and (millimeters)}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
MAXMIMaxUimMumRRAecTurIrNenGt PSea(kTRAe=ve2r5se°CVoultangleess otherwVRisRMe note2d0 ) 30
40
50
60
18
10
115 120
80
100
150
200 Volts
Maximum RMS Voltage
PARAMETER
Maximum DC Blocking Voltage
VRMS
SYMBOL
VDC
HER¹⁴16
01²F⁰C
HE²¹R16
0³2⁰FC
H²E⁸ R16
4₀0_3FC
3_H5_ER16
50_04FC
42_HER16
60 _05FC
5860_{H0E6RF1C617000H0E7RF1C6}1105_H50_0E8RF1C6124000_UNIT^VVoollttss
MaximMauxmimruempeAvtietirvaegepFeoarkwarerdvReerscetifiveodlCtaugrreent
V_RRMIO
50
100
200
300 ¹4^.000
600
800 1000 V ^Amps
Maxim_Peu_am_{k F}R_orM_waS_rdv_So_ul_rt_ga_eg_Ce_{urrent 8.3 ms}
Maxim_suu_pem_rimD_pC_oseb_dlo_oc_nk_ri_an_teg_dv_loo_al_dta_(Jg_Ee_DEC
single half
method)
sine-wave^VVRDMC_IF^S_SM
35
50
70
140
210
280
420
560 700 V
30
Amps
100
200
300
400
600
800 1000 V
Maxim^Tyu^pm^icaa^{l T}v^he^er^ra^mg^ae^{l R}fo^er^sw^isa^tarⁿd^cere⁽c^Nt^oif^ti^eed²⁾current
(Tota^Tl)^{ypical Junction Capacitance (Note 1)}
Operating Temperature Range
(Per L_Se_tog_ra)_{ge Temperature Range}
Peak forward surge current, 8.3ms single half
sine-wave superimpos_Ce_Hd_Ao_Rn_ACra_Tt_Ee_Rd_ISlo_Ta_ICd_S
RΘJA
I_F ^CJ
TJ
TSTG
-55 to +125
40
16.0 ¹²⁰
8.0
- 65 to +175
-55 to +150
℃/W
PF
A
℃
℃
I_FSM
125.0
A
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maxi^Mm^au^xm^imI^un^mst^Fa^on^rwta^an^rdeo^Vu^ols^tagF^eo^ar^tw¹a^.0rd^{A D}V^Coltage
IF=8A^Ma@^xim2^u5^m°C^{Average Reverse Current at @T A=25℃}
Maxim^Rau^tem^d D^DCC^BR^loe^cv^keⁱⁿr^gs^Ve^oC^ltau^gr^erent @ Tc=2^@5^T°C^A=125℃
at Ra_Nt_Oe_Td_ED_S:C Blocking Voltage @ Tc=100°C
VF
V_F
IR
I_R
0.50
1.00
0.70
1.35 _0.5
10 ¹⁰
100
0.85
0.9
1.70
0.92 Volts
V
mAmps
uA
Typic¹a^{- M}l J^eu^asn^uc^reti^don^at C^{1 M}ap^Ha^Zc^aiⁿta^dn^ac^pe^pl(^ieN^dO^reT^veE^rs1^e) ^{voltage of 4.0 VD}C^C_j^.
Maxi²m^{- T}u^hm^ermR^ae^{l R}ve^esrⁱs^ste^anR^cee^Fc^ro^ov^me^Jr^uy^ncT^tii^omⁿ e^to(N^AmO^bT^ieE^nt2)
Trr
75
50
pF
75
ns
Typical Thermal Resistance
R_θJC
3
°C/W
Operating Temperature Range
T_J
-55 to +150
°C
Storage Temperature Range
T_STG
-55 to +150
°C
NOTES:1.Measured at 1.0MHZ and applied reverse voltage of 4.0V DC
2.Measured with IF=0.5A, IR=1A, IRR=0.25A
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.