DTC144TUA Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Digital Transistor

WILLAS
FM120-M+
DTC144TUA ^THRU
1.^N0A^PS^NURF^DAC^igEⁱM^taOU^l N^TT^rS^aCⁿH^sOⁱT^sTK^toY B^rARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Features• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• Pb-Fre^•e^Hp^iga^hc^sk^ua^rgg^ee^cais^paa^bv^ilia^tyi^.lable
• Guardring for overvoltage protection.
RoHS p_•r_Uo_ld_tru_ac_ht_igf_ho_-r_spp_ea_ec_dk_si_wng_itcc_hio_nd_g.e suffix ”G”
Haloge^•n^Sfⁱr^le^ice^onp^er^poⁱd^tau^xc^iat^{l p}fo^larⁿp^aa^{r c}c^hk^ipin^, g^mec^to^ald^se^ilics^ouⁿff^ji^ux^nc“H^tio”^n.
• Epoxy m^•e^Le^et^as^dU^-frL^ee9^p4^aV^rt-^s0^mf^ela^em^{t e}m^nvaⁱb^roilⁿit^my^erⁿa^tt^ain^{l s}g^{tandards of}
•
x
x
Bw^Mui^o_thilⁱt^s_o-^uiun^r_t^ebc^•_Mio^Sa^RHM_n^es_e^oaI_n^nHL_lr_coe^se^-SgS_chⁱs_e^tp_t^Tii_ni^vs_a^r_n^Doit_fg^t_rn^do^-y_e^1ur_eeis^c9L_cx^tp5ee^f_tr⁰_a^o_eo^vn^0rd_r^e_lan^pu/lb²_d^ac_a^1c2_tlle_a^kf8_ioinⁿt_trhp^g_apeu_acoctckdroie^enns_gsfi^ui_csg^fo_t^fuⁱ_odxr_er^"as^Gst_ui(^"os_ffne_ixeo"Hfe_"aqnuiivnavleerntet _{cr icrciruciut)it}
The bias resistors consist of thin-film resistors with complete
isolation^•to^Epa^oll^xo^yw^{: U}n^Le⁹g⁴a^-t^Viv⁰e^rab^ti^ea^ds^fin^lag^mo^ef^reth^tae^rdin^apⁿu^t t. They also have the
advantag• eCaosf ea:lmMoosldtecdopmlapslteicte, SlyOeDli-m12in3aHting parasitic effects
x Only the_•o_Tn_e/_ro_mff_inc_ao_lsnd_:Pit_li_ao_tn_eds _tn_ee_rmed_inato_lsb_{, s}e_os_lde_et_rafo_br_leo_pp_ee_rr_Mat_Ii_Lo_-n_S,_Tm_Da_-7k₅in₀g^,
device design easy
Method 2026
Package outline
SOD-123H
0.146(3.7)
SOT-323 ^0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
.010(0.25) _{0.031(0.8) Typ.}
.003(0.08)
• Polarity : Indicated by cathode band
Absolute Ma_•x_Mim_ouu_nm_tingR_Pa_oti_sn_itg_ios_{n : Any}
P_•ar_Wa_em_ige_ht_te_:r_Approx
imated
Symbol
0.011 gra
m
Collector-Base Voltage
V_CBO
Value
50
Unit
V
Dimensions in inches and (millimeters)
.087(2.20)
.070(1.80)
Collector-Emitter Voltage_{MAXIMUM RATI}V_{NCEGOS AND EL}5_E0_{CTRICAL CHA}V _RACTERISTICS
Emitter-Base voltage
Collector^RC^au^tirⁿr^gen^st^a-C^t o²n⁵t^℃inuo^au^ms^bient
temperatur^Ve_I^Eu_CBn^O less
5
otherwis₁e₀₀specified.
V
mA
Collector^SFD_oinris^gcs^leaip_ppa_ahti_co^aitn^siveehlaolaf _{dw,adveer,a6te0Hcuzr,rreenstisbtyiv}P_2eC0o%f ^{inductive lo}2^a0^d0^.
mW
Junction Temperature
T_J
RATINGS
Storage Temperature Range
Marking Code
T_STG
150
к
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
-55~150
к
12
13
14
15
1^.06^56(1.40) 18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
6^.00^47(1.20) 80
100
150
200
Electric_Ma_al_xC_imh_ua_mr_Ra_Mc_Ste_Vr_oi_ls_tat_gi_ecs
VRMS
14
21
28
35
42
56
70
105
140
Sym _{Maximum DC Bloc}P_kina_gra_Vm_oltae_gt_eer
Min _VDT_Cyp ₂M₀ax ₃U₀nit ₄₀
50
60
80
100
150
200
V_(BR)CBOMaxim^C(I_uC^o=_m^ll5e_A0cutv^o_eArr^-,_a^BI_gE^a_e=s0eF)o^B_rw^re_a^a_r^k_d^d_R^o_e^w_cⁿ_tif^V_ie^o_d^lta_C^g_u^e_rrent
50
IO ^---
---
V
1.0
V_(BR)CEOPeak
Collector-Emitter Breakdown Voltage
(^FI^o_C=^rw1^am^rdA^S, ^uI_B^r=^ge0)^{Current 8.3 ms single half}
sine-wa⁵v⁰e
---
IFSM
---
V
.004(0.10)MAX.
30
V_(IBCRB)EOBO^s_TT^u_yy^p_pp^e_iicc^riE(C(_aa^m_IVllE^mop_C=TJl^o_B^il_u5h^te=st_ne0ec5crutr^d_0mot^-A_i^BV_or^o_a,n^na,C_lIsCIR^r_CuE^ae==t_ea^t_-0^e_0Bsop)^d_i)fa^r_sfe^l_ct^o_Ca^a_i^a_tn^k_au^d_c^d_nrer^(o_c^J_ee^wE_(nN^Dn_(tNo^EV_toe^Co_te2^lmt₎^a₁^eg₎^theod)
I_EBO
OperaEtimngittTeer mCpuet-roaftfuCreurRreanntge
Stora⁽g^Ve^ET^B=e⁴m^Vp^,e^Ir^Ca⁼tu⁰r⁾e Range
h_FE
DC Current Gain
(V_CE=5V, I_C=1mA)
5
---
RΘJA
--- _CJ---
--- ^TJ---
TSTG
100 300
---
V
0.5
uA
-55 to +125
0.5
uA
600
---
40
120 ^.016(0.40)
.008(0.2_-0₅)_{5 to +150}
Dimensio^- n⁶s⁵ i^tn^oi⁺n¹c⁷h⁵es and (millimeters)
V_{CE(satM) axim}^C(I_uC^o_m=ll5^e_F^cm_o^toA_rw^r,-_a^EI_Br^m_d=0ⁱ_V^t_.^Ct_5o^eH_ml^r_taA^SA_gR^a)_e^tAu_aC^r_t^aT1tEi_.^o_0Rⁿ_AIS^V_DT^o_CI^ltCaSge
---
R1 _MaximIn_up_mut_Ar_ve_es_ri_as_gta_en_Rce_{everse Current at @T A=25}3_℃2.9
f_T
Transition Frequency
Rated_(VD_CC_E=B₁l₀o_Vck_,in_IEg₌V_-5o_mlta_Ag_,e_f=100MHz)
@T A=125℃^---
SYMB_--O_-L FM12₀0-_.M₃H FM130_V-MH FM140-MH FM150-MH_SF_uM_g16_g0_e-M_sH_teF_dM1_S80_o-M_ldH_eF_rM1100-MH FM1150-MH FM1200-MH
VF
47
IR
0.50
61.1 K¡
0.70 _{Pad Layout}0.85
0.5
0.70
0.9
0.92
250
---
MHz
10
NOTES:
0.90
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
1.90 mm
*Marking: 06
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.