DTC144TE Datasheet, PDF (1/2 Pages) Rohm – Digital transistors (built in resistor)

WILLAS
FM120-M
DTC144TE ^THRU
1^N.0A^PS^NUR^DFAⁱC^gE^itM^aO^lU^TNT^raSCⁿH^sOⁱT^sT^tK^oY^rBARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
Features^{• High current capability, low forward voltage drop.}
• _Pb-Fre^•_e^H_pⁱ_a^gh_ck^su_a^r_g^g_e^{e c}_is^ap_a^a_v^b_a^ili_i^t_l^y_a^. _ble
• Guardring for overvoltage protection.
RoHS p_•r_Uo_ld_tru_ac_ht_igfo_hr_-sp_pa_ec_ek_din_swg_itc_co_hd_ine_g.suffix ”G”
Haloge^•n^Sfr^ile^ice^onpr^eo^pd^itu^axcⁱt^af^lo^pr^lapⁿa^ac^r k^chin^ipg^, c^mo^ed^tae^{l s}sⁱu^licff^oix^{n j}“^uHⁿ”^ction.
• Epoxy m^{• L}e^ee^at^ds^-U^freL^e9^p4^arV^ts-^m0 ^efl^ea^tm^enm^via^robⁿil^mity^enra^tat^lin^sg^{tandards of}
•
x
Moisure_{• R}^MS_oe^I_H^Ln^-_Ss^S_pi^Tt_ri^Dv_odi^-t¹_uy_c⁹_tL⁵_f⁰e_o⁰_rv_pe^/2_al_c²1_k⁸_{ing code suffix "G"}
Built-in bi_Ha_as_lor_ge_es_nis_frt_eo_ers_pre_odn_ua_cb_t l_fe_ort_ph_ae_ckc_ino_gn_cfi_og_du_era_suti_fo_fixn_"o_Hf_" an inverter circuit
without_Mco_enn_ce_hct_ain_ng_ie_cx_ate_lrn_da_al i_tn_aput resistors (see equivalent circuit)
x The bias resistors consist of thin-film resistors with complete
isolation^{• E}to^poa^xll^yow^{: U}n^Le⁹⁴g^-a^Vti⁰v^re^atb^ei^das^fli^an^mg^eo^rf^et^th^ae^rdi^anⁿp^tut. They also have the
advanta•gCeaosfea: lMmooldset dcoplmasptliec,teSlOy De-li1m23inHating parasitic effects
x Only the_{• T}o_en_r/_mo_if_nf _ac_lo_sn_:Pd_li_ati_to_en_ds_ten_re_me_ind_at_lo_s, b_se_olds_ee_rt_af_bo_lr_e o_pp_ere_Mra_It_Lio_-Sn_T, _Dm_-7a₅k₀in^, g
device design easy_{Method 2026}
Package outline
SOD-123H
SOT-523
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
.067(1.70)0.056(1.4)
.059(1.50)
0.031(0.8) Typ.
.043(1.10)
.035(0.90)
0.040(1.0)
.014(0.35⁰)^.024(0.6)
.010(0.25)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Absolute Maximum Ratings
ParameMteAr XIMUM RATSIyNmGbSolAND EVLEalCuTeRICAL CHUAnRitACTERISTICS
Collecto_Rr-_aB_ta_ins_ge_sV_ao_tlt₂a₅g_℃e _{ambient temperature}V_{uCBnOless otherwise}50_specified.
V
Collecto_Sr-_iE_ngm_leitt_pe_hr _aV_so_elta_hg_ae_{lf wave, 60Hz, resistiv}V_{eCEoOf inductive loa}5_d0_.
V
ECmolliettcetro-_FBr_oaC_rsu_cer_arvepon_altt_c-aCig_tioven_{etilnouaodu,sderate current by}V_2IEC0B%O
5
100
V
mA
Collector Dissipation
RATINGS
P_C
Marking Code
Junction Temperature
Maximum Recurrent
Peak
Reverse
Voltag^Te^J
Storage Temperature Range
Maximum RMS Voltage
T_STG
SY₁M₅B₀OL FM120-MH FM_m13_W0-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
12
150
VRRM
20
13_к30
-55~150
VRMS
14
2^к1
14
15
16
18
10
40
50
60 ^.0088⁽⁰0^.20) 100
.004(0.10)
28
35
42
56
70
115 120
150
200
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Electri_Pc_eaa_kl_FC_orh_wa_arr_da_Sc_urt_ge_er_Cis_urt_reic_nts_{8.3 ms single half}
Sym_{superimposed on rated}P_loa_ar_da₍m_JEe_DEte_Cr_method)
sine-wave
Min
IFSM_Typ
Max
Unit
.004(0.10)MAX.
30
V_(BR)T_CBy_Opical
Collector-Base Breakdown Voltage
T_(Ih_C=e₅rm_0ua_Al R_, e_IEs₌is₀t₎ance (Note 2)
V_(BR)^TO_CE^yp_O^{peircaatlinJC(I}_guC^on_=T^llc_1eetmc^imotAno_p^r_e,^C-_rIEaB^a_=mtpu0^ai_r^t)_ec^teitRraanB_nc^{regea(Nkdootew1n)Voltage}
V_(BR)S_EBto_Orage^E(T_IE^me₌m^i5tt0p^eue^r-Ar^Ba_,atu_IsCr^e=e_0BR_)ra^en^ag^ke^{down Voltage}
50 RΘJA ---
CJ
50
---
TJ
5 TSTG ---
---
V
---_{-55 to +}V₁₂₅
---
V
40
120.014(0.35)
.006(0.15^-)^{55 to +150}
- 65 to +175
I_CBO
Collector Cut-off Current
(V_CB=50V, I_EC=H0)ARACTERISTICS
---
---
0.5
uA
SYMBOL FM120-MH FM130-MH FM140-MH FM_D1_i5_m0-_eM_nH_sF_ioM_n16_s0_i-_nMH_inF_cM_h1_e8_s0-_aM_nH_dFM_(m11_i0_ll0_im-M_eH_teFM_rs1₎150-MH FM1200-M
Ih_EFB^MRM_{EOaaatxxeiimdmuDumD(E(mCVVmCEC}^FAB_BE^io_Ctvl==o^{tree4u5wcrrVrV}_{kaarCig,e,nrde}^uInI_gCC^ttV_==R^-_VGo^o_01eo^fl_)amfvlttaiea^CnAgrgu_se)e^r_e^rae_Ct^{n1ut.r0reAnDt} _aCt
---
@T A=25℃
@T A=125℃¹⁰⁰
VF
IR
---
300
0.5
600
u⁰A^.50
---
0.70
0.85
0.5
10
0.9
0.92
V_{CEN(sOat)TES:}
Collector-Emitter Saturation
(I_C=5mA, I _B =0.5 mA)
Voltage
---
---
0.3
V
R₁1_{- Measu}I_rn_ep_du_at_tr₁es_Mis_Ht_Zan_ac_ne_{d applied reverse voltage of 4.}3₀2_V._D9_C.
47
61.1 K¡
f_T2- Therm^T(a_Vrl ^a_CR_Eⁿe_=ss_1ii^ts_0iot_Vaⁿn_,c^FIe_E^r=eF_-qr₅o^umm^eAnJ^c,u^yfn₌c₁ti₀o₀n_Mto_HA_zm₎ bient
---
250
---
MHz
*Marking: 06
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.