DTC144EUA Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Digital Transistors

WILLAS
FM120-M+
DTC144EUA ^THRU
1.^N0A^PS^NUR^DFAⁱC^gE^itM^aO^lU^TNT^raSCⁿH^sOⁱT^sT^tK^oY^rBARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features ^{• Low profile surface mounted application in order to}
• Pb-Free^opp^ta^imcⁱk^za^eg^be^oais^rda^sv^pa^ai^cl^ea^.ble
• Low power loss, high efficiency.
RoHS_•p_Hro_igd_hu_cc_ut _rf_ro_er_np_t a_cac_pk_ain_bg_ilic_tyo_, d_loe_ws_fu_of_rf_wix_ar”_dG_v”_{oltage drop.}
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Haloge•nHfigrehesuprrgoedcuacpt afobriliptya.cking code suffix “H”
• Epoxy_• m_Gue_ae_rt_ds_riU_ngL_fo9_r4_oV_ve-0_rvofl_la_tam_gm_{e p}a_rb_oi_tl_eit_cy_tir_oa_nt_.ing
• Moisu•reUSltreanhsigithiv-istpyeLeedvsewlit1ching.
• Built-in_• b_Si_ia_lics_or_ne_es_pis_itt_ao_xrs_iale_pn_la_anb_ale_{r c}th_hie_p,c_mon_etf_aig_l u_sir_la_ict_oio_nn_juo_nf_ca_tin_onin_. verter circuit
withou_•t _Lc_eo_an_dn_-e_frc_et_ein_pg_are_tsxt_me_ern_ea_{t e}l _nin_vp_iru_ot_nr_me_es_nis_tato_l r_ss_{tandards of}
• The bias^MIr^Le^-s^Sis^Tt^Do^-r¹s⁹c⁵o⁰n⁰s^/2is²t⁸of thin-film resistors with complete
isolatio^•n^Roto^HSal^plo^row^dun^ce^{t f}g^oa^r t^pi^av^ce^kibⁿi^ga^cs^oin^deg ^so^uf^fft^ixhe^"Gi^"nput. They also have the
advanta^Hg^ae^loo^gef ⁿal^fm^reeos^pt^roc^do^um^ct p^fol^re^pte^al^cy^kie^nglim^coi^dn^eat^si^un^fg^fixp^"a^Hr^"asitic effects.
0.071(1.8)
0.056(1.4)
• Only th^Me^eo^cn/^hof^af cⁿoⁱn^cd^aiti^lon^ds^an^te^aed to be set for operation, making
device_• d_Ee_ps_oi_xg_yn_: e_Ua_Ls₉y_{4-V0 rated flame retardant}
.010(0.25)
0.040(1.0)
.003(0.08) 0.024(0.6)
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Absolute maximumMraetthinodgs20@2625к
.087(2.20)
Symbol _{• Polarity : Ind}P_ia_cr_aa_tm_edet_be_yr _{cathode band} Min Typ Max Unit
.070(1.80)
Dimensions in inches and (millimeters)
VCC
Supply voltage
VIN
•_InM_po_uu_t n_voti_ln_tag_gePosition : Any
---
50
---
V
-10 --- 40
V
IO
•^OW^ue^tpi^ug^th^ct^u:^rA^repⁿp^t roximated 0.011 gram ^---
--- 100 mA
Pd
Power dissipation
--- 200 ---
mW
Tj
Junction_Mte_Am_Xpe_IMrat_Uur_Me _{RATINGS AND} -_E--_LEC1_T5_R0 _ICA-_L-- _CHARć_ACTERISTICS
Tstg
Storage temperature
-55 --- 150
ć
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.056(1.40)
Electrical Character^Ris^At^Ti^Ic^Ns^G@^S 25к
.047(1.20)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Sym^Mb^aro^kl^{ing Code}
Parameter
Min Typ
VMI(oaff)ximumInRpeuctuvrroeltnatgPee(aVk_CR_C=e5vVer,sIe_O=V1o0lt0a­geA)
V_MI(o_an)_{ximum RMS Voltage}(V_O=0.3V, I_O=2mA)
VO(on)
Output voltag= e (IO/II 10mA/0.5mA)
M_II axi₌ mum_InD_pC_utB_clo_uc_rrk_ein_ng_{t (}V_Vo_Ilta₅g_Ve₎
0.5VRRM ---
---_VRMS ---
---
---
--- ^VDC ---
IO_M(o_aff)_ximumO_Au_vt_ep_ru_at_gc_eu_Frr_oe_rn_wt_a(_rV_dC= _RC=_e5_c0_tifV_ie,_dV_CI _u0_r)_rent
GI
DC current gain (VO=5V= , IO 5mA)
--- _IO ---
68
---
RPe1 ak ForwIanrpduSt urergseisCtaunrrceent 8.3 ms single half sine-wave32.9_IFSM 47
R2_s/_uR_p1_erimpoR_see_dsi_os_nta_rn_ac_tee_dr_la_oati_do _{(JEDEC method)}
0.8 1.0
TfTypical Th^T(Ve^rr^a_Omⁿ⁼a^s1il^t0iR^oVe^n,s^fi_Irs_O^et₌a^q5n^umc^ee_Anc(_,N^yf=o₁te₀₀2_M) _Hz)
Typical Junction Capacitance (Note 1)
--- RΘJA250
CJ
Operating Temperature Range
TJ
12_Max 13_Unit 14
20 --- 30 V 40
14 ^3.0 21 ^V
28
0.3
V
20_0.18 30_mA 40
0.5 ­A
---
61.1 K¡
1.2
--- MHz
-55 to +125
15
16
50
60
18
10
115 120
80
100
150
200
35
42
56
70
105
140
5^.00^04(0.10)6^M0^AX. 80
100
150
200
1.0
30 .016(0.40)
.008(0.20)
40
Dimensions¹i²n⁰inches and (millimeters)
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage a_*t _M1.0_aA_rkD_iC_{ng: 26}
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MSHuFMg1g6e0-sMtHedFMS18o0-lMdHerFM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70 Pad Layout 0.85
0.9
0.92
IR
0.70_0.5
10
0.90
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.90
mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.