DTC143TUA Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Digital Transistor

WILLAS
FM120-M+
DTC143TUA ^THRU
1.^N0A^PS^NUR^DFAⁱC^gE^itM^aO^lU^TNT^raSCⁿH^sOⁱT^sT^tK^oY^rBARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
Features^{optimize board space.}
•
Pb-Free^{• L}p^oa^wc^pk^oa^wg^ee^{r lo}is^ssa^{, h}vⁱa^gi^hla^eb^ffil^ce^iency.
• High current capability, low forward voltage drop.
RoHS p•rHodiguhcstufroger pcaapcakbiinligty.code suffix ”G”
Halogen^{• G}fr^ue^ae^rdp^rirⁿo^gd^fu^orc^ot^vf^eo^rr^vop^la^tac^gk^ein^pg^rotc^eo^cd^tioeⁿs^. uffix “H”
•
•
EMpooisxuyrem_{••• SeLSU}ee_eilltt_anirs_cadso-Ui^hnf_triⁱLv^gee_i^hep_t9y^-ipts4_aaL^pxV_reeitaesv-l0^d_empslfleal^w_1aenim_ttacerm^hncivnha_igrib_po.i_,nli_mt_my_eer_tnaa_tlt_ai_sn_{l isl}g_{itcaonndjaurndcst}
ion
of
.
x Built-in bia_Ms_ILr_-e_Ss_Tis_Dt_-o₁r₉s₅e₀n₀a_/2b₂le₈ the configuration of an inverter circuit
without c_•oRnonHeScptirnogduectxftoerrpnaaclkingpucotdreesuisfftiox r"sG"(see equivalent circuit)
x The bias rHeasloisgteonrsfreceopnrsoidsutcot ffotrhpianc-kfilnmg croedseisstuofrfisx "wHi"th complete
isolationMtoeacllohwanneigcaativledbaiatsaing of the input. They also have the
advantage of almost completely eliminating parasitic effects
x
Only
•
the
o^En^p/^oo^xff^y
c^: o^Un^Ld⁹i⁴ti^-o^Vn⁰s^ran^te^ee^d d^flato^mebe^res^tae^rt^df^aoⁿr^t
operation,
making
device d^•e^Csi^ag^sn^e e^{: M}as^oy^{lded plastic, SOD-123H}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Package outline
SOD-123H
SOT-323 0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08) _{0.031(0.8) Typ.}
Method 2026
Absolute Ma^•x^Pim^olau^rm^ityR^{: I}aⁿt^diⁱn^cg^ats^{ed by cathode band}
Pa^•r^Mam^oueⁿt^teⁱⁿr^{g Position : An}S^yymbol
Value
Unit
Dimensions in inches an^.0d⁸(⁷m⁽i²ll^.im²⁰e⁾ters)
.070(1.80)
Collector-Base V•olWtageeight : Approximated 0V.0_C1_BO1 gram
50
V
Collector-Emitter Voltage
V_CEO
50
V
Emitter-Base voltage MAXIMUM RATVIN_EBOGS AND EL5ECTRICAL CHVARACTERISTICS
Collector _RC_au_tr_ir_ne_gn_st-C_ato₂n₅tin_℃uou_as_{mbient temperature}I_{Cunless otherw}1_is0_e0_specified.
mA
Collector _SD_ii_ns_gsi_lp_ea_pti_ho_an_{se half wave, 60Hz, resist}P_{ivCe of inductive l}2_o0_a0_d.
mW
Junction T^Fe^om^r p^cae^pra^at^cuⁱr^te^{ive load, derate current by}T²_J ^0%
150
к
Storage Temperature Range RATINGS T_STG
-5S5Y~M15B0OL FM120-MH FкM130-MH FM140-MH FM150-MH FM16^.0⁰-⁵M⁶H⁽¹F^.4M⁰1⁾80-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
12
13
14
15
16^{. 0 4 7 ( 1 . 2 0}1⁾ 8
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
Electri^Mc^aa^xl^imC^uh^ma^Rr^Ma^Sct^Ve^olr^tais^getics
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
Sym
Parameter
Min ^VDT^Cyp M²⁰ax U³⁰nit ⁴⁰
50
60
80
100
150
200
V_(BR)CBO^MaximC(I_C^ou_=l^ml5e0cA_ut^voAer-,rBa_IE^ga=es0eF₎ ^{oBrrweaarkddoRwecntiVfieodltaCguerrent}
50
IO
---
---
V
.004(0.10)M₁A_.0X.
V_(BR)CEO^PsuepaekrC(_iFImC^oo_=pr^llwo_1esm^ac_er^td_Aod^r,So-IE_nuB^r_=mrga0^ei_t^t)_e^tCe_du^r_lor^Braer_dn^eta_(J8^k_E.^d3DomEw_Cs^{nsmVineogtllhtea}_oh^g_da^e₎ ^lf
sine-wave
50
IFS_-M_--
---
V
30
V_(BR)EBO^TypicE(a_IE^ml₌^Ti5tht0ee_ur^r-m_AB,^aaIls_C^Re=e_0B^s_)r^{isetaakndcoew(NnoVteol2ta)ge}
I_CBO
Typic_Ca_ol J_llu_en_ctc_oti_ro_Cn _uC_t-a_op_fa_f c_Cit_ua_rn_rece_nt(Note 1)
Oper(aVtiCnBg=T50emV,pIeEr=a0tu) re Range
I_EBO
Stora^Eg^me ⁱT^tte^em^{r C}pe^ur^ta^-otu^ffre^CR^ura^rn^egⁿe^t
(V_EB=4V, I_C=0)
5 RΘJ-A--
CJ
---
TJ^---
--- ^TST-^G--
---
V
0.5 _{-55 t}u_oA₊₁₂₅
0.5
uA
40 ^.016(0.40)
120 ^.008(0.20)
Dimensions in inches^-a⁵n⁵d^to(m⁺i¹ll⁵im⁰ eters)
- 65 to +175
h_FE
DC Current Gain
(V_CE=5V, I_C=1m^CA^H)^{ARACTERISTICS}
100 _SYM3_B0_O0_{L FM12}6₀0_-0_{MH FM13}-₀--_{-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
V_CE(sat)^MMaaxxiimmC( _I^uo_uC=^mmlle_5m^cFAtov_A^orer_,^w_I^-_rB^E_aa=g^mr₀^de_.ⁱ₂^tVRt₅^eoe_m^rlvtS_A^aega_r)se^tu_ea^r_C^{at t1uio.r0rn}_eAn^VDto_aC^lt_t^ag_@^e _T
---
A=25℃
R1
Input resistance
3.29
f_T
Rated_TrD_aC_nsB_itl_io_oc_nk_Fin_rg_eqV_uo_elt_na_cg_ye
(VCE=10V, I E=5mA, f=100MHz)
@T A=125℃
---
NOTES:
VF_---
IR_4.7
250
0.3
V ^0.50
6.11 K¡
---
MHz
0.70
0.85
Sugg0e.5sted Solder
P₁a₀d Layout
0.70
0.9
0.92
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.90
Marking^2-: ^T0^h3^{ermal Resistance From Junction to Ambient}
1.90
mm
2012-06
2012-0
0.65
0.65
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.