DTC114ECA Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Digital Transistor

WILLAS
FM120-M+
DTC114ECATHRU
NPN Digital Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
Features • Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
• ^Pb-Freo^ept^pim^aciz^ke^ab^go^earⁱd^ss^ap^va^acⁱe^l.^able
SODS-12O3HT-23
RoHS^{• L}p^oro^wd^pu^oc^wt ^efo^r r^lop^sa^s,c^hkⁱi^gn^hg^ec^fo^ficdⁱe^ens^cu^yf^.fix ”G”
Halog^•e^Hn^igfr^he^ce^urp^rr^eoⁿd^t u^cac^pt ^afo^br^ilip^tya^,c^lok^win^fg^orc^wo^ad^re^{d v}s^ou^lf^tf^aix^ge“H^d”^rop.
•
•
•
•
Bw^EMui^po_thi^olⁱt^s_o^x-^uiu_{•••••}^yn^r_tLSUGH^embc_eiliultgio_a^S_i^ea^rachad_n^es^re_od-sn^ht_nⁿ_fr^srur_eⁱe^sigeern_c^Uigs^heptg_t^iei^-i_i^Lvs_ptn^sfaocit_apg^to⁹_xar^y_reir_t^4po_eaess^Lavl_x^dV_m^eebe_pt^s_e^riv-_ln_elavw⁰ⁱ_r^e_ea^ton_n^iytlb^tfla._a^clte1al^ar_l^he_ngc^m_i^iv_n^nhet_ih^mg_prippoe^._u^r,a_notmc^b_mtro^ei_eee^ln^ict_s^t_nat^yfi_tii_ls^og_as^r_t^nlu^a_oisl.r_i^t_rtcaⁱ_saⁿ_ot_ni^g_no_dn_jaurno_dcf_sta_ioon_fn.inverter circuit
The bia_Ms_ILre_-Ss_Tis_Dto_-1rs₉₅c₀o₀n_/s₂i₂s₈t of thin-film resistors with complete
isolat_•ioRnotHoSaplrloodwucntefograptaivcekinbgiacosdinegsuofffixth"Ge"input. They also have the
advant_Hag_ale_ogo_ef_na_frl_em_eo_ps_rot _dc_uo_cm_{t fo}p_rle_pt_ae_cl_ky_ine_gli_cm_odin_ea_st_uin_ffig_{x "}p_Ha_"rasitic effects.
• Only t_Mhe_eo_cn_h/o_aff_nco_icnd_ait_lio_dn_as _tn_aeed to be set for operation, making
device_•
design easy
Epoxy : UL94-V0
rated
flame
re
tard
ant
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
Absolute^• m^Tea^rmxiⁱⁿm^alu^sm^:Plr^aa^teti^dn^tg^ers^m@^ina2^ls5^,к^{solderable per MIL-STD-750}
0.031(0.8) Typ.
0.031(0.8) Typ.
Symbol
Me_Pt_ah_ro_amd 2_et0_e2_r6
Min Typ Max Unit
VCC • PSoulpaprliytyvo: lItnadgeicated by cathode band --- 50 ---
V
VIN
IO
• M_OIno_upu_tupn^tuvt_ti^on_clutg^argrP_eeo_ns_t ition : Any
-10 --- 40
V
--- 50 100
mA
Pd • WPoewigehrtd:isAspippartoioxnimated 0.011 gram --- 200 --- mW
Dimensions in inches and (millimeters)
Tj
Junction temperature
--- 150 ---
ć
Tstg
StorageMteAmXpIeMraUtuMre RATINGS AND E-5L5ECT-R--ICAL15C0 HARćACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Ele^Fc^ot^rr^ci^ac^pa^al^cC^itivh^ea^lr^oa^adc^,t^de^er^ri^as^teti^cc^us^rre@^nt 2^by5²Ðº^0%
.008(0.20)
.003(0.08)
Symbol
R_PA_aT_rI_aN_mG_eS_ter
M^Si^Yn^MBOLTy^Fp^M120-MM^Ha^Fx^M130U^-Mn^Hit^{FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
MVaI(orfkf)ing CoIdneput voltage (VCC=5V, IO=100­A)
M^Va^I(oxⁿi⁾mum Recurrent Pea^(Vk ^OR⁼e⁰v^.e³r^Vs^,e^IOV⁼o¹lt⁰a^mge^A)
V_MO_aI(I_xon_im) _{= um R}OIn_Mup_Stupt_Vuct_ouvltroaregltna_etg(eV(I= IO_5/IVI _)10mA/0.5mA)
0.5 --- 12 --- 13 V 14
-_V--_RRM --- ₂₀ 3.0 ₃₀ V ₄₀
---
-^V--^RMS
0.1
---
14
0.3
0.88
21
V
mA
28
MI_Oa_(ox_ffi₎mum DOCutBpluotckciunrgreVnotl(taVg_C= e_C=50V, V_I 0)
--V- DC --- 20 0.5 30 ­A 40
M^Gax^I imum A^Dv^Cera^cuge^rreFⁿo^trw^gaaⁱrⁿd ⁽R^Ve^Oc⁼t⁵ifi^Ve^{= ,}d^IC^O u⁵rr^men^At⁾
R1
Input resistance
30 _IO ---
---
7.0
10
13
K¡
R_Pe2/_aR_k1_ForwaR_rde_Ss_uis_rt_ga_en_Cce_urr_rea_nti_to_{8.3 ms single half sine-wave}
sufp_Terimpose^T(Vd^ra_Oo_=nn^s1rⁱ⁰a^tiVt^oe^n,d_IfOlo^r=ea_5qd_mu(^eJ_AE^n,D^cfy=E₁C₀m_0Meth_Ho_zd₎)
0._I8_FSM
---
1.0
250
1.2
--- MHz
Typical Thermal Resistance (Note 2)
RΘJA
15
16
50
60
.004(0.10)MAX.
35
42
50
60
1.0
30
18
10
80
100
56
70
80
100
.020(0.50)
.012(0.30)
115 120
150
200
105
140
150
200
Dime₄n₀sions in inches and (millimeters)
Typical Junction Capacitance (Note 1)
CJ
120
Operating Temperature Range
TJ
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
Suggested Solder
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-^PMH^aF^dM^L18^a0^y-M^oH^uF^tM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
MARKING_V: _F24
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70
.035
.900
.031
.800
0.5
10
0.85
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.079
2.000
inches
mm
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.