DTA124EE Datasheet, PDF (1/2 Pages) Rohm – Digital transistors (built-in resistors)

WILLAS
FM120-M+
DTA124EE THRU
1.^P0A^NS^PUR^DFAⁱC^gE^itM^aO^lU^TNT^raSCⁿH^sOⁱT^sT^tK^oY^rBARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
Features • High current capability, low forward voltage drop.
• High surge capability.
• Pb-Fr_•e_Ge_up_ara_dc_rik_na_g g_foe_{r o}is_vea_rvv_oa_lti_ala_geb_ple_rotection.
0.146(3.7)
0.130(3.3)
SOT-523
0.012(0.3) Typ.
RoHS^{• U}pr^lto^rad^huⁱc^gt^h-fo^spr^ep^ea^dc^sk^win^itcg^hcⁱⁿo^gd^. e suffix ”G”
Halog_••e_LSn_eilaif^cr_doe_-nfe_reep_epr^ipto^aad^xriu_tasc^lmpt ^lef^ao_enr_taep^rnca_vhc_irik^poi^,nn^mmg^eetc_nao_tlad^slie_slitcas^onu^ndf^jf_auix_rndcs“^tH^ioo”_fn.
• Epoxy m_MIe_Le_-Sts_TDU_-L₁₉9₅4₀₀V_/-₂0₂₈flammability rating
• Moisu•re^RoS^He^Sn^ps^roit^div^ui^cty^{t fo}L^re^pv^ae^ckl ⁱ1^{ng code suffix "G"}
• Built-in Hbaialosgernesfriesetoprrsodeuncat fbolrepathckeincgocnofdigeusruafftiixo"nH"of an inverter circuit
0.071(1.8)
0.056(1.4)
.067(1.70)
.059(1.50)
withou_Mt c_eo_cnn_he_act_nin_ig_ce_ax_lte_drn_aa_tl_ainput resistors
•
Tishoelabti_•oianEs_ptrooe_xsa_yilsl_:otUow_Lrs_9n4ec-og_Vna₀st_riivase_tt_eob_dfi_falt_ahs_miinneg-fri_eolmtfatrrh_dee_as_niisn_t tpourst.
with complete
They also have
the
advan^•ta^Cg^ae^seo^:f ^Mal^om^ldo^es^dt^pc^lo^asm^tip^c,le^St^Oel^Dy^-e¹l²im^3Hinating parasitic effects.
• Only t•heTeormn/ionafflsco:Pnladtietidontesrmneineadlst,osobledesreabt lfeopr eorpMeIrLa-tSioTnD,-m75a0k^,ing
device design easMyethod 2026
0.031(0.8) Typ.
.043(1.10)
0.040(1.0)
0.024(0.6)
.014(0.⁰3^.5⁰³)^{1(0.8) Typ.}
.010(0.25)
• Polarity : Indicated by cathode band
Dim^.0en³s⁵io⁽⁰n^.s⁹i⁰n⁾inches and (millimeters)
Absolute_• m_Moa_ux_ni_tm_ingum_Por_sa_itit_oi_nng_{: A}s_n@_y 25к
Symbol _{• Weight : Appr}P_oa_xr_ia_mm_ae_tt_ee_dr _{0.011 gram} Min Typ Max Unit
VCC
Supply voltage
--- -50 ---
V
VIN
IO
IC_R(M_aA_tX_i)_ngs
a^IOtⁿ2^up5^tup℃^tuvtoMca^lutm^aArgrb^Xeeiⁿe^ItMnt ^Ute^Mmp^Rer^Aat^Tur^Ie^Nu^Gnl^Ses^As o^Nth^Der^Ew^--4-Lis^-0Ee ^Csp^Te^--1-Rc^3-0i^0-f^0Iie^Cd^A. ^{L1--0C- HARmVAACTERISTICS}
S^Pi^dngle pha^Ps^oe^wh^eral^df^isw^sa^ipv^ae^t,^io6ⁿ0Hz, resistive of inductive^-l^-o^-ad. ^{150 ---}
mW
T^FTs^otjg^{r capac}SJ^iuttⁱo^vnrecatiglooen^adttee^,mm^dp^eperearra^taettuu^crre^{uerrent by 20%}
--- 150 ---
ć
-55 --- 150
ć
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Ele^MMc_aat^rxkr_imiiⁿc_ugma^Cl^oRC^deeh_cua_rrr_ea_ntc_Pt_ee_ar_kis_Reti_vc_ers_se@_Vo2_lt5_agк_e
12
13
14
VRRM
20
30
40
Sy_Mm_axb_io_ml_{um RMS Voltage} Parameter
VI(off)
Input voltage (VCC=-5V, IO=-100­A)
M_Va_I(ox_ni₎mum DC Blocking Vo_(Vlta_Og₌e_{-0.2V, IO=-5mA)}
-^M0^V.ⁱ5^nRMS
Typ
---
14
Max
---
21 ^Unit
V
28
--^V- ^DC --- ²⁰ -3.0 ³⁰ V ⁴⁰
V_MO_a(_xon_i)_{mum A}O_vu_et_rp_au_gt_ev_Fo_olt_ra_wg_a= e_rd(I_RO/_eII_ct-_i1_fie0_dm_CA_u/-_r0_re.5_nm_t A
II = Input current (VI -5V)
--- _IO ---
---
---
-0.3
V
-0.36 mA
PIOe(aofkf) ForwaOrduStpuurgtecuCrurrerennt t(V8.C3C= m=-s5s0iVng,lVe Iha0lf) sine-wave
su^Gp^Ierimpose^Dd^Con^cura^rrt^eed^ntlo^ga^adⁱⁿ(J⁽E^VD^OE⁼C^-5m^{V= ,}et^Ih^Ood^-5) ^mA)
5--6^I-FSM
---
---
-0.5 ­A
---
R^TRy2/^pR^1ic1^{al The}RI^rnmeps^auiltsRrtaeens^sci^isset^taarna^nctcieo^{e (Note 2)}
TOyp_fTpeircaatlinJgunT_T(c_Vertim_aOo_=nnp_s-e1C_{irt0iaaoVtpnu,}ar_fIecrOi_et_=Raq5anumnceeg_Anec(_,N_yf=o₁te₀₀1_M) _Hz)
105._R8.4ΘJA
22
1.0
CJ
---_TJ 250
28.6 K¡
1.2
--_--_{55 to} M₊₁H₂z₅
Storage Temperature Range
TSTG
15
16
50
60
18
10
80
100
35
42
50
60
.5060 8 ( 0 . 2 0 ) 70
.₈0₀04(0.10)₁₀₀
1.0
115 120
150
200
105
140
150
200
30
.004(0.10)MAX.
40
120
-55 to +150
- 65 to +17^.5^014(0.35)
.006(0.15)
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at @^*T^MA^a=2^rk5℃ ^{ing: 15} _IR
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70
0.85
0.9
0.92
Dimensio₀n_.5s in inches and (millimeters)
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.