DTA114TUA Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Digital Transistors

WILLAS
FM120-M
DTA114TUA THRU
PNP Digital Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features• Low profile surface mounted application in order to
optimize board space.
• Pb-Free^•p^La^oc^wk^pa^owg^ee^r i^los^ssa^,v^ha^igi^hla^eb^ffl^ice^iency.
• High current capability, low forward voltage drop.
RoHS pr_•o_Hd_iu_ghct_sufo_rgr_ep_ca_ac_pk_abin_ilg_ityc_. ode suffix ”G”
Halogen^•f^Gre^ue^arp^drrⁱoⁿd^g u^foc^rt^of^vo^er^rvp^oa^ltac^gk^ein^pg^roc^teo^cd^tie^ons^. uffix “H”
• Epoxy me^• e^Ut^ls^traU^hL^ig9^h4^-sV^pe-0^edfl^sa^wm^itm^chaⁱⁿb^gil^.ity rating
• Moisure S^• e^Sn^ils^icit^oivⁿi^ety^piL^tae^xv^iae^ll^p1^{lanar chip, metal silicon junction.}
x Built-in bia^• s^Lere^ads^-is^frt^eo^ers^pae^rn^tsa^mbl^ee^et^th^ee^nvcⁱo^ronⁿfi^mg^euⁿra^tati^lo^sn^taoⁿf^daa^rn^dsin^ov^ferter circuit
x
without co_•n_R^Mn_o^Ie_H^Lc^-_S^Sti_pn^T_rg^D_od^-e¹_ux_c⁹t_t⁵e_f⁰_orn⁰_{r p}a^/2_al _c²in_k⁸_ip_ngut_core_desi_ss_uto_ffir_xs_"G(s_"ee equivalent circuit)
The bias re_Hs_ais_lot_go_ers_{n f}c_reo_en_ps_ri_os_dt_uo_cf_t t_foh_rin_p-_af_cil_km_ingre_cs_odis_eto_surs_ffixw_"i_Hth_" complete
iasdovlaatniotangte_Mo _oaefllcoawl_hmanoes_ngt _iac_cotivmae_{lpbldeiataeslt}iyn_ageloimf _{itnhaetiinngpupta. rTahseityicaelsffoechtasve} the
x Only the o^•n^E/o^poff^xc^yo^:n^Ud^Li⁹ti⁴o^-n^Vs⁰n^rae^te^ed^{d f}t^lo^ambe^{e r}s^ee^tat ^rf^do^arⁿo^t peration, making
device de•siCganseea: sMyolded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
Package outline
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
.010(0.2⁰5^.0)^40(1.0)
0.024(0.6)
.003(0.08)
0.031(0.8) Typ.
.087(2.20)
Dimensions in inches and^.0(⁷m⁰il⁽l¹im^.8e⁰te⁾ rs)
Absolute Maxi^•m^Mu^om^untRⁱⁿa^gti^Pn^og^ss^{ition : Any}
Par^•am^Weeⁱt^ge^hr^{t : Approximate}S^dy⁰m^.0b¹o¹l^gram Value
Unit
Collector-Base Voltage
V_CBO
-50
V
Collector-Emitter Voltage ^{MAXIMUM RA}V^T_C^I_E^N_O ^{GS AND E}-5^L0^{ECTRICAL C}V^{HARACTERISTICS}
Emitter-BasReavtionltgasgeat 25℃ ambient temperaVtu_Er_Be_O unless otherw-5ise specified. V
Collector Cu_Sr_ir_ne_gn_let-C_po_hn_at_sin_eu_ho_au_ls_{f wave, 60Hz, resis}I_{Ctive of inductive}-1_l0_o0_ad.
mA
Collector DFisosripcaatipoancitive load, derate current Pb_Cy 20%
200
mW
.056(1.40)
Junction Temperature Range RATINGS T_J
-55~S1Y5M0BOL
FM120-MHкFM130-MH
FM140-MH
FM150-MH
.047(1.20)
FM160-MH FM180-MH
FM1100-MH
FM1150-MH
FM1200-M
Storage TeMmaprkeirnagtuCreodReange
T_STG
Maximum Recurrent Peak Reverse Voltage
-55~150
12 к 13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50 ^.004(06^.10^0)MAX. 80
100
150
200
Electrica^Ml^aC^xih^ma^umra^Ac^vt^ee^rar^gi^es^Fti^oc^rws^{ard Rectified Current}
IO
1.0
Sym ^{Peak Forward Su}P^rga^e r^Ca^um^rree^ntt⁸e^.3r ^{ms single half sin}M^e-win^ave T_IFy_Sp_M Max Unit
30 ^.016(0.40)
V_(BR)CBO
supeCrimolpleocsteodr-oBnarsaeteBdrleoadkd(JoEwDnEVComltaegtheod)
Typi⁽c^Ia^C=l T^-5h⁰e^urm^A,a^Il^ER⁼e⁰s⁾istance (Note 2)
-50
V_(BR)CEO
Collector-Emitter Breakdown Voltage
Typi₍c_Ia_C=l J_-1u_mnc_Ati_,o_In_B=C₀a₎pacitance (Note 1)
-50
V_(BR)EBO
OpeEramtinitgteTr-eBmapserBatrueraekRdoawngneVoltage
Stor⁽a^Ig^E=e^-T⁵e⁰m^uAp^,e^Ir^Ca⁼tu⁰r⁾e Range
-5
---
RΘJA
C^---J
T_--J_-
TSTG
---
V
---
V
-55 to +125
---
V
.008(0.20)
40
Dimensio¹n²s⁰in inches and (millimeters)
-55 to +150
- 65 to +175
I_CBO
Collector Cut-off Current
(V_CB=-50V, I_E=0)
I_EBO
Emitter Cut-off C^Cu^Hr^Are^Rn^At ^CTERISTICS
Maxi(mVEuBm=-F4oVr,wIaC=rd0)Voltage at 1.0A DC
---
---
-0.5
uA
Suggested Solder
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH^PFM^a1^d80^L-M^aH^yF^oM^u1^t100-MH FM1150-MH FM1200-M
---
V^--F^-
-0.5
uA _0.50
0.70
0.70 ^0.85
0.9
0.92
h_FE Max^D(im_VCCu_Em^C=u-A_5rv^rVee_,nr_Ia^t_Cg_=Ge_-a1R^imne_Ave₎ rse Current at @T A=2150℃0
2_I5_R0
600
---
V_CE(sat)
Rate_Cd_oD_lleC_cB_tolo_r-c_Ek_min_ig_tteV_ro_Slta_ag_tue_ration
(I_C=-10mA, I_B=-1mA)
Voltage^@T
A=125℃
---
---
-0.3
V
0.5
mm
0.910 0
R₁ ^NOTEIn^Sp^:ut Resistor
7
10
13
K¡
1.90
f_T
1-
2-
Me_Ta_rs_au_nr_se_id_tioa_nt 1_FM_reH_qZ_uea_nd_cyapplied reverse voltage
Th⁽e^Vrm^CEa⁼l^-R¹e⁰s^Vis^,t^Ia^Cn⁼c^-e^5mFr^Aom^{, f=}Ju¹n⁰c⁰ti^Mon^Ht^zo⁾Ambient
of 4.0
---
VDC.
250
---
MHz
*Marking: 94
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.